Powiadomienia systemowe
- Sesja wygasła!
- Sesja wygasła!
Tytuł artykułu
Wybrane pełne teksty z tego czasopisma
Identyfikatory
Warianty tytułu
Języki publikacji
Abstrakty
One of the key parameters determining detection properties of silicon PIN detector structures (p⁺-ν-n⁺ or n⁺-ν-p⁺) is minority carrier diffusion length in p-n junction regions p-n (p⁺-ν or n⁺-ν). The parameter concerned strongly depends on quality of the starting material and technological processes conducted and has a significant impact on detector parameters, in particular dark current intensity. Thus, the parameter must be determined in order to optimise the design and technology of detectors. The paper presents a method for measuring the spatial distribution of effective carrier diffusion length in silicon detector structures, based on the measurement of photoelectric current of a non-polarised structure illuminated (spot diameter of 250 μm) with monochromatic radiation of two wavelengths λ₁ = 500 nm (silicon penetration depth of around 0.9 μm) and λ₂ = 900 nm (silicon penetration depth of around 33 μm). The value of diffusion length was determined by analysing the spatial distribution of optical carrier generation and values of photoelectric currents.
Wydawca
Czasopismo
Rocznik
Tom
Strony
265--270
Opis fizyczny
Bibliogr. 16 poz., il., wykr.
Twórcy
autor
- Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
autor
- Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
autor
- Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
autor
- Institute of Physics, Al. Lotników 32/46, 02-668 Warsaw, Poland
autor
- Institute of Physics, Al. Lotników 32/46, 02-668 Warsaw, Poland
Bibliografia
- 1. V. V. Voronkov and R. Falster “Intrinsic point defects in silicon: a unified view from crystal growth, wafer processing and metal diffusion”, Source Diffusion and Defect Data Part В Solid State Phenomena, 108-109, 1-10 (2005).
- 2. R. Falster, V.V. Voronkov, and F. Quast, “On the properties of the intrinsic point defect in silicon: a perspective from crystal growth and wafer processing”, Phys. Stat. Solidi В 222, 219-244 (2000).
- 3. H. Bracht, R. Kube, E. Huger, and H. Schmidt, “Properties of point defects in silicon: new results after a long -time debate”, Solid State Phenomena 205-206, 151-156 (2013).
- 4. M. Węgrzecki, J. Bar, T. Budzyński, M. Cież, P. Grabiec. R. Kozłowski, J. Kulawik, A. Panas, A. Sarnecki, W. Słysz , D. Szmigel, I. Węgrzecka, M. Wieluński, K.Witek, A. Yakushev, and M. Zaborowski, “Design and properties of silicon charged-particle detectors developed at the institute of electron technology (ITE)”, Proc. SPJE 8902, 890212-1-11 (2013).
- 5. I. Węgrzecka, A. Panas, T. Budzyński, M. Cież, P. Grabiec, R. Kozłowski, A. Sarnecki, W. Słysz, D. Szmigel, M. Węgrzecki, and M. Zaborowski, “Technology of silicon charged-particle detectors developed at the institute of electron technology”, Proc. SPIE 8902, 890211-1-7 (2013).
- 6. R.L. Cummerow, “Photovoltaic effect in p-n junctions”, Phys. Rev. 95, 16-20 (1954).
- 7. D.K. Schroder, Semiconductor material and device characterization, 3ed. J. Wiley & Sons,. Inc. Hoboken, NJ, 2006.
- 8. C.A. Ambroziak, Semiconductor photoelectric devices: an introduction to design, Iliffe Books, London, 1968.
- 9. M.A. Green and M.J. Keevers, “Optical properties of intrinsic silicon at 300 K”, Progr. Photovolt. 3, 189-192 (1995).
- 10. ASTM standard F 391-90a, “Standard test method for minority-carrier diffusion length in silicon by measurement of steady-state surface photovoltage”, Annual Book of ASTM Standards, Am.Soc. Test. Mat., West Conshohocken, PA, 1966.
- 11. W.E. Philips, “ Interpretation of steady-state surface photovoltage measurements in epitaxial semicondutor layers”, Solid-State Electron. 15, 1097-1102 (1972).
- 12. E. Yablonovitch, R.M. Swanson, W.D. Eades, and B.R. Weinberger, “Electron-hole recombinationat the Si-SiO2 interface”, Appl. Phys. Lett. 48, 245-247 (1986).
- 13. E.D. Stokes and T.L. Chu , “Carrier diffusion length in solar cells from short-circuit current measurements”, Appl. Phys. Lett. 30, 425-426 (1977).
- 14. H.F. Matare, Defect electronics in semiconductors, John Wiley and Sons, New York, Toronto, 1971.
- 15. R.G. Rhodes, Imperfections and active centres in semiconductors, Pergamon Press, Oxford, 1964.
- 16. S.K. Estreicher and M Sanati, and M.Ng Szwacki “Interactions with radiation defects, carbon, and oxygen” Physical Review В 77, 125214-1-9 (2008).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-5fa52051-4742-4bf3-a6ab-8f966fb68847