Study of the spatial distribution of minority carrier diffusion length in epiplanar detector structures

• Autorzy: Piotrowski T. , Węgrzecki M. , Stolarski M. , Gościński K. , Krajewski T.

Identyfikatory

DOI

10.1515/oere-2015-0035

• Języki publikacji: EN

Abstrakty

EN

One of the key parameters determining detection properties of silicon PIN detector structures (p⁺-ν-n⁺ or n⁺-ν-p⁺) is minority carrier diffusion length in p-n junction regions p-n (p⁺-ν or n⁺-ν). The parameter concerned strongly depends on quality of the starting material and technological processes conducted and has a significant impact on detector parameters, in particular dark current intensity. Thus, the parameter must be determined in order to optimise the design and technology of detectors. The paper presents a method for measuring the spatial distribution of effective carrier diffusion length in silicon detector structures, based on the measurement of photoelectric current of a non-polarised structure illuminated (spot diameter of 250 μm) with monochromatic radiation of two wavelengths λ₁ = 500 nm (silicon penetration depth of around 0.9 μm) and λ₂ = 900 nm (silicon penetration depth of around 33 μm). The value of diffusion length was determined by analysing the spatial distribution of optical carrier generation and values of photoelectric currents.

Słowa kluczowe

EN

effective minority diffusion length; surface recombination velocity; epiplanar detector; p-n structure

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2015
• Tom: Vol. 23, No. 4
• Strony: 265--270
• Opis fizyczny: Bibliogr. 16 poz., il., wykr.

Twórcy

autor

Piotrowski T.

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

autor

Węgrzecki M.

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

autor

Stolarski M.

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

autor

Gościński K.

• Institute of Physics, Al. Lotników 32/46, 02-668 Warsaw, Poland

autor

Krajewski T.

• Institute of Physics, Al. Lotników 32/46, 02-668 Warsaw, Poland

Bibliografia

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