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Tytuł artykułu

Study of the spatial distribution of minority carrier diffusion length in epiplanar detector structures

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Języki publikacji
EN
Abstrakty
EN
One of the key parameters determining detection properties of silicon PIN detector structures (p⁺-ν-n⁺ or n⁺-ν-p⁺) is minority carrier diffusion length in p-n junction regions p-n (p⁺-ν or n⁺-ν). The parameter concerned strongly depends on quality of the starting material and technological processes conducted and has a significant impact on detector parameters, in particular dark current intensity. Thus, the parameter must be determined in order to optimise the design and technology of detectors. The paper presents a method for measuring the spatial distribution of effective carrier diffusion length in silicon detector structures, based on the measurement of photoelectric current of a non-polarised structure illuminated (spot diameter of 250 μm) with monochromatic radiation of two wavelengths λ₁ = 500 nm (silicon penetration depth of around 0.9 μm) and λ₂ = 900 nm (silicon penetration depth of around 33 μm). The value of diffusion length was determined by analysing the spatial distribution of optical carrier generation and values of photoelectric currents.
Twórcy
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
autor
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Physics, Al. Lotników 32/46, 02-668 Warsaw, Poland
autor
  • Institute of Physics, Al. Lotników 32/46, 02-668 Warsaw, Poland
Bibliografia
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Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-5fa52051-4742-4bf3-a6ab-8f966fb68847
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