The temperature dependence of subthreshold characteristics of Si and SiC power MOSFETs

• Autorzy: Kraśniewski J. , Janke W.
• Języki publikacji: EN

Abstrakty

EN

In the paper, subthreshold characteristics of Si and SiC MOSFET power transistors in a wide range of current and temperature are considered. Representative examples of measured iD-vGS dependencies for temperatures from 20°C up to over 140°C are presented and discussed. Substantial differences of the shapes obtained for Si and SiC devices are observed. The subthreshold slope and subthreshold swing coefficient are extracted from measured curves for two types of devices and compared.

PL

W niniejszym artykule porównano charakterystyki w obszarze podprogowym tranzystorów mocy MOSFET z krzemu i węglika krzemu w szerokim zakresie prądu i temperatury. Dla reprezentatywnej partii tranzystorów przedstawiono i omówiono pomiary zależności iD-vGS w szerokim zakresie temperatur od 20°C do ponad 140°C. Dodatkowo zaprezentowano różnice w wartości nachylenia oraz wahania współczynnika w obszarze podprogowym od temperatury otoczenia dla badanych tranzystorów z Si i SiC.

Słowa kluczowe

EN

MOSFET; power transistor; subthreshold; temperature dependence

PL

MOSFET; tranzystor mocy; obszar podprogowy; zależność od temperatury

• Wydawca: Wydawnictwo Uczelniane Politechniki Koszalińskiej
• Czasopismo: Zeszyty Naukowe Wydziału Elektroniki i Informatyki Politechniki Koszalińskiej
• Rocznik: 2016
• Tom: Nr 9
• Strony: 51--58
• Opis fizyczny: Bibliogr. 12 poz., tab., wykr.

Twórcy

autor

Kraśniewski J.

• Faculty of Electronics and Computer Sciences, Koszalin University of Technology, Poland

autor

Janke W.

• Faculty of Electronics and Computer Sciences, Koszalin University of Technology, Poland

Bibliografia

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• 8. R. Singh et al., Analysis of the Effect of Temperature Variations on Subthreshold Leakage Current in P3 and P4 SRAM Cells at Deep Sub-micron CMOS Technology, Int. Journal of Computer Applications, Vol. 35, No. 5, Dec. 2011, pp. 8-12.
• 9. Y. Zeng, A. Softic and M.H. White, Characterization of Interface Traps in the Subthreshold Region of Implanted 4H and 6H-SiC MOSFET’s, Solid State Electronics, Vol. 46 (2002), pp. 1579-1582.
• 10. A. Appaswamy, P. Chakraborty and J.D. Cressler, Influence of Interface Traps on the Temperature Sensitivity of MOSFET Drain Current Variations, IEEE Electron Device Letters, vol. 31, No. 5, (2010), pp. 387-369.
• 11. S. Potbhare et al., Time Dependent Trapping and Generation-Recombination of Interface Charges: Modeling and Characterization for SiC MOSFET’s, Materials Science Forum, vol. 556-557, Sept. 2007, pp. 847-850.
• 12. S. DasGupta et al., Extraction of Trapped Charge in 4H-SiC Metal Oxide Semiconductor Field Effect Transistors from Subthreshold Characteristics, Applied Physics Letters, vol. 99, No. 2, (2011), p. 23503.