The Analysis Of Accuracy Of Selected Methods Of Measuring The Thermal Resistance Of IGBTs

• Autorzy: Górecki K. , Górecki P.

Identyfikatory

DOI

10.1515/mms-2015-0036

• Języki publikacji: EN

Abstrakty

EN

In the paper selected methods of measuring the thermal resistance of an IGBT (Insulated Gate Bipolar Transistor) are presented and the accuracy of these methods is analysed. The analysis of the measurement error is performed and operating conditions of the considered device, at which each measurement method assures the least measuring error, are pointed out. Theoretical considerations are illustrated with some results of measurements and calculations.

Słowa kluczowe

EN

IGBT; thermal resistance; measurements; transistor; semiconductor devices

• Wydawca: Komitet Metrologii i Aparatury Naukowej PAN
• Czasopismo: Metrology and Measurement Systems
• Rocznik: 2015
• Tom: Vol. 22, nr 3
• Strony: 455--464
• Opis fizyczny: Bibliogr. 33 poz., rys., tab., wykr., wzory

Twórcy

autor

Górecki K.

• Gdynia Maritime University, Faculty of Electrical Engineering, Morska 83, 81-225 Gdynia, Poland

autor

Górecki P.

• Gdynia Maritime University, Faculty of Electrical Engineering, Morska 83, 81-225 Gdynia, Poland

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