EL and ITG Characterization of Large Areas Black Silicon Solar Cells VIA Screen Painting

• Autorzy: Tang Y. , Zhou C. , Wang W. , Zhou S. , Zhao Y. , Liu X. , Zhao L. , Li H. , Chen J. , Yan B. , Fei J. , Cao H. , Wu X.

Warianty tytułu

PL

Ocena EL i ITG czarnych krzemowych ogniw słonecznych o dużej powierzchni wykonanych przez drukowanie maski

• Języki publikacji: EN

Abstrakty

EN

A simple process of texturing silicon (Si) surfaces using gold (Au)-catalyzed wet chemical etching was used to form black Si (BS) on a (100) p-type substrate. The surface became uniformly black after 6 min, with a resulting reflectivity of < 2% over the 400 nm to 1100 nm wavelength range. Large areas (153.18 cm ²) of black Si solar cells (BSSCs) with an n ⁺ -p-p ⁺ structure were also fabricated using conventional processes, including POCl3 diffusion, screen printing, and co-firing. The resulting cells were divided into two groups according to the emitter (46 and 37 Ω/), and their output parameters were studied. The best convention efficiency (Eff) was < 10%. The open-circuit voltage (Voc) was particularly low because of poor surface passivation, and the shunt resistance (Rsh) linearly decreased with the series resistance (Rs). Electroluminescence (EL) and infrared thermography (ITG) measurements were conducted to characterize the BSSCs. Both the emissivity and temperature were low and nonuniform. Optimizing the fabrication process by reducing the etching depth and lowering the dopant sheet resistance led to significant improvement in Voc (~48 mV) and Eff (~3.8% absolute). EL and ITG measurements indicate that Rs is another important factor that accounts for the poor properties of the BSSCs.

PL

Do wytworzenia czarnego krzemu (BS) na podłożu typu p-Si(100) zastosowano prosty sposób teksturowania powierzchni krzemowej metodą chemicznej akwaforty na mokro z zastosowaniem, jako katalizatora, nanocząstek złota (Au). Podłoże staje się jednolicie czarne po 6 min, osiągając współczynnik odbicia < 2% w zakresie długości fali od 400 nm do 1100 nm. Wykonano również dużą powierzchnię czarnych krzemowych ogniw słonecznych (BSSC), ze strukturą n ⁺ - p -n ⁺, konwencjonalnymi metodami obejmującymi dyfuzję POC13,drukowanie maski i wyżarzanie. Otrzymane ogniwa dzielą się na dwie grupy w zależności od emitera (46 i 37Ω/): zbadano ich wyjściowe parametry. Najlepsza uzyskana wydajność wynosi < 10%. Napięcie obwodu otwartego (Voc) jest szczególnie niskie z powodu słabej pasywacji powierzchni, a rezystancja równoległa (Rsh) liniowo maleje z rezystancją szeregową (Rs). Charakterystykę BSSC określają pomiary elektroluminescencji (EL) i tomografii w podczerwieni (ITG).Zarówno emisyjność jak i temperatura są niskie i niejednorodne. Optymalizacja procesu wykonana przez zmniejszenie głębokości akwaforty i obniżenie rezystancji warstwy domieszkowania prowadzi do znaczącej poprawy Voc (ok. 48mV) i Eff (ok. 3,8%).

Słowa kluczowe

EN

solar cells; Au catalysis; EL measurement; ITG test

PL

kataliza Au; krzemowe ogniwa słoneczne; drukowanie maski; pomiar elektroluminescencji

• Wydawca: Wydawnictwo SIGMA-NOT
• Czasopismo: Przegląd Elektrotechniczny
• Rocznik: 2013
• Tom: R. 89, nr 1b
• Strony: 151--154
• Opis fizyczny: Bibliogr. 16 poz., rys., wykr.

Twórcy

autor

Tang Y.

• Institute of Electrical Engineering, Key Laboratory of Solar Thermal Energy and Photovoltaic Systems, Chinese Academy of Sciences, Beijing 100190, P. R. China
• Graduate University of the Chinese Academy of Sciences, Beijing 100049, P. R. China

autor

Zhou C.

• Institute of Electrical Engineering, Key Laboratory of Solar Thermal Energy and Photovoltaic Systems, Chinese Academy of Sciences, Beijing 100190, P. R. China

autor

Wang W.

• Institute of Electrical Engineering, Key Laboratory of Solar Thermal Energy and Photovoltaic Systems, Chinese Academy of Sciences, Beijing 100190, P. R. China

autor

Zhou S.

• Institute of Electrical Engineering, Key Laboratory of Solar Thermal Energy and Photovoltaic Systems, Chinese Academy of Sciences, Beijing 100190, P. R. China
• Graduate University of the Chinese Academy of Sciences, Beijing 100049, P. R. China

autor

Zhao Y.

• Institute of Electrical Engineering, Key Laboratory of Solar Thermal Energy and Photovoltaic Systems, Chinese Academy of Sciences, Beijing 100190, P. R. China
• Graduate University of the Chinese Academy of Sciences, Beijing 100049, P. R. China

autor

Liu X.

• Institute of Electrical Engineering, Key Laboratory of Solar Thermal Energy and Photovoltaic Systems, Chinese Academy of Sciences, Beijing 100190, P. R. China

autor

Zhao L.

• Institute of Electrical Engineering, Key Laboratory of Solar Thermal Energy and Photovoltaic Systems, Chinese Academy of Sciences, Beijing 100190, P. R. China

autor

Li H.

• Institute of Electrical Engineering, Key Laboratory of Solar Thermal Energy and Photovoltaic Systems, Chinese Academy of Sciences, Beijing 100190, P. R. China

autor

Chen J.

• Institute of Electrical Engineering, Key Laboratory of Solar Thermal Energy and Photovoltaic Systems, Chinese Academy of Sciences, Beijing 100190, P. R. China
• Graduate University of the Chinese Academy of Sciences, Beijing 100049, P. R. China

autor

Yan B.

• Institute of Electrical Engineering, Key Laboratory of Solar Thermal Energy and Photovoltaic Systems, Chinese Academy of Sciences, Beijing 100190, P. R. China
• Graduate University of the Chinese Academy of Sciences, Beijing 100049, P. R. China

autor

Fei J.

• Eoplly New Energy Technology Co., Ltd. Nantong, Jiangsu 226602, P. R. China

autor

Cao H.

• Eoplly New Energy Technology Co., Ltd. Nantong, Jiangsu 226602, P. R. China

autor

Wu X.

• Beijing NMC Co., Ltd., Beijing 100015, P. R. China

Bibliografia

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