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Department of Micro- and Nanotechnology of Wide Bandgap Semiconductors

Autorzy
Piotrowska A.
Identyfikatory
Warianty tytułu
Języki publikacji
EN
Abstrakty
Słowa kluczowe
EN
PL
Wydawca
Instytut Technologii Elektronowej
Czasopismo
Prace Instytutu Technologii Elektronowej
Rocznik
2013
Tom
z. 1/2
Strony
65--92
Opis fizyczny
Bibliogr. 84 poz., il.
Twórcy
autor
Piotrowska A.
ania@ite.waw.pl
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
Bibliografia
  • Publications’2012
  • [P1] Barańska A., Szerling A., Karbownik P., Bugajski М., Hejduk K., Łaszcz А., Gołaszewska-Malec K.: Ohmic Contacts to n+ GaAs for Application in AlGaAs/GaAs QCL. Proc. of the XII Sem. “Surface and Thin Film Structures”. Szklarska Poręba, Poland, 9-12.05.2012 (submit. to print, in Polish).
  • [P2] Barańska A., Szerling A., Karbownik P., Hejduk K., Bugajski М., Łaszcz A., Gołaszewska-Malec K., Filipowski W.: Ohmic Contacts for Room-Temperature AlGaAs/GaAs Quantum Cascade Lasers (QCL). Opt. Appl. (submit. to print).
  • [P3] Bąk-Misiuk J., Romanowski P., Misiuk A., Sadowski J., Jakieła R., Barcz A.: Effect of Stress on Structural Transformations in GaMnAs. J. of Nanosci. a. Nanotechnol. 2012 vol. 12 p. 8270-8273.
  • [P4] Borowicz P., Adamus Z., Ekielski М., Piotrowska A., Kuchuk A., Borysiewicz М., Kamińska E., Latek М.: Structural Investigation of Carbonic Layers in Ohmic Contacts - Comparison of Raman Spectra Measured with Irradiation through the Silicide Layer and Silicon Carbide Substrate. Elektronika 2012 vol. LIII no. 9 p. 31-34 (in Polish).
  • [P5] Borowicz P., Adamus Z., Ekielski М., Piotrowska A., Kuchuk A., Borysiewicz М., Kamińska E., Latek М.: Structural Investigation of Carbonic Layers In Ohmic Contacts - Comparison of Raman Spectra Measured with Irradiation through the Silicide Layer and Silicon Carbide Substrate. Proc. of the XI Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 11-14.06.2012, p. 580-585(in Polish).
  • [P6] Borowicz P., Kuchuk A., Adamus Z., Borysiewicz М., Ekielski М., Kamińska E., Piotrowska A., Latek М.: Visible and Deep-Ultraviolet Raman Spectroscopy as a Tool for Investigation of Structural Changes and Redistribution of Carbon in Ni-Based Ohmic Contacts on Silicon Carbide. ISRNNanomaterials 2012 vol. 2012 s. 1-11, ID 852405.
  • [P7] Borysiewicz М., Dynowska E., Kolkovsky V., Dyczewski J., Wielgus., Kamińska E., Piotrowska A.: From Porous to Dense Thin ZnO Films through Reactive DC Sputter Deposition onto Si(100) Substrates.phys. stat. sol. a 2012 vol. 209 no. 12 p. 2463-2469.
  • [P8] Borysiewicz М., Dynowska E., Kolkovsky V., Wielgus М., Gołaszewska-Malec K., Kamińska Е., Ekielski М., Struk Р., Pustelny Т., Piotrowska A.: Sputter Deposited ZnO Porous Films for Sensing Applications. Proc. of the MRS Fall Meet. 2012. Boston, USA, 25-30.11.2012 (submit. to print).
  • [P9] Borysiewicz М., Kamińska Е., Myśliwiec М., Wzorek М., Kuchuk A., Barcz А., Dynowska Е., Di Forte-Poisson М.-A., Giesen С., Piotrowska A.: Fundamentals and Practice of Metal Contacts to Wide Band Gap Semiconductor Devices. Crystal Res. a. Technol. 2012 vol. 47 no. 3 p. 261-272.
  • [P10] Domanowska A., Miczek М., Ucka R., Matys М., Adamowicz В., Żywicki J., Taube A., Korwin-Mikke K., Gierałtowska S., Sochacki М.: Surface Photovoltage and Auger Electron Spectromicroscopy Studies of HfO2/SiO2/4H-SiC and HfO2/Al2O3/4H-SiC Structures. Appl. Surf. Sci. 2012 vol. 258 p. 8354-8359.
  • [P11] Ekielski М., Sidor Z., Juchniewicz М., Płuska М., Wzorek М., Piotrowska А., Kucharski R., Kolkovsky V., Żytkiewicz Z. R., Gruszka М.: GaN Photonic Structures Fabrication Using Nanoimprint Technology. Elektronika 2012 vol. LIII no. 9 p. 16-19 (in Polish).
  • [P12] Ekielski М., Sidor Z., Juchniewicz М., Płuska М., Wzorek М., Piotrowska А., Kucharski R., Kolkovsky V., Żytkiewicz Z. R., Gruszka М.: GaN Photonic Structures Fabrication Using Nanoimprint Technology. Proc. of the XI Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 11-14.06.2012, p. 625-630 (in Polish).
  • [P13] Grochowski J., Guziewicz М., Kruszka R., Kopalko K., Piotrowska A.: Fabrication and Characterization on p-NiO/n-ZnO Heterojunction Towards Transparent Diode. Proc. of the 35th Int. Spring Sem. on Electronics Technology. Bad Aussee, Austria, 9-13.05.2012, p. 488-492.
  • [P14] Grochowski J., Kamińska E., Piotrowska A., Dynowska E., Dłużewski P., Dyczewski J., Szczepańska A., Kaźmierczak P.: Fabrication and Properties of Nanocrystalline Zn-Ir-O Thin Films, phys. stat. sol. с 2012 vol. 9 no. 6 p. 1504-1506.
  • [P15] Guziewicz М., Jung W., Kruszka R., Gołaszewska-Malec K., Piotrowska A., Domagała J., Wachnicki L., Guziewicz E., Godlewski М.: Fabrication and Characterization of n-ZnO/p-SiC Heterojunction Diode. Mater. Sci. Forum 2012 vol. 717-720 p. 1323-1326.
  • [P16] Guziewicz М., Kisiel R., Szczepański Z., Wzorek М.: Silver Metallization for SiC Die Assembly and Wire Connections. Proc. of the 11th Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies. Porquerolles, France, 28.05-1.06.2012, p. 1-2.
  • [P17] Guziewicz М., Klata P., Grochowski J., Gołaszewska-Malec K., Kamińska E., Domagała J., Witkowski В., Kandyla М., Chatzimanolis Ch., Kompitsas М., Piotrowska A.: Hydrogen Sensing Properties of Thin NiO Films Deposited by RF Sputtering. Procedia Eng. (submit. to print).
  • [P18] Guziewicz М., Słysz W., Borysiewicz М., Domagała J., Kruszka R., Gołaszewska-Malec K., Juchniewicz М., Sidor Z., Piskorska-Hommel E., Wilkens Т.: Superconducting and Structural Properties of Nb(TiN) Films. Proc. of the 11th Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies. Porquerolles, France, 28.05-1.06.2012, p. 1-2.
  • [P19] Guziewicz М., Słysz W., Borysiewicz М., Kruszka R., Sidor Z., Juchniewicz М., Gołaszewska-Malec K., Domagała J., Rzodkiewicz W., Ratajczak J., Bar J., Węgrzecki М., Sobolewski R.: Technology of Ultrathin NbN and NbTiN Films for Superconducting Photodetectors. Acta Phys. Pol. A 2012 vol. 120 no. 6-A p. 76-79.
  • [P20] Guziewicz М., Wzorek M., Kisiel R.: Multilayer Metallization for SiC Die Assembly and Wire Bonding. Proc. of the 36th Int. Microelectronics and Packaging IMAPS-CPMT Poland Conf. Kołobrzeg, Poland, 26-29.09.2012 (submit. to print).
  • [P21] Jasik A., Sankowska I., Regiński K., Machowska-Podsiadło E., Wawro A., Wzorek М., Kruszka R., Jakieła R., Kubacka-Traczyk J., Motyka М., Kaniewski J.: MBE Growth of Type-II InAs/GaSb Superlattices for MWIR Detection. Chapter 3. [In] Horizons in World Physics, vol. 276. Nova Sci. Publ., New York, 2011, p. 101-144.
  • [P22] Jasik A., Sankowska I., Regiński K., Machowska-Podsiadło E., Wawro A., Wzorek M., Kruszka R., Jakieła R., Kubacka-Traczyk J., Motyka М., Kaniewski J.: MBE Growth of Type-II InAs/GaSb Superlattices for MWIR Detection. Chapter 9 [W] Crystal Growth: Theoty, Mechanisms and Morphology. Nova Sci. Publ. Inc., New York, 2011, s. 293-329.
  • [P23] Kilanski L., Tuomisto F., Kruszka R.: Magnetically Active Vacancy Related Defects in Irradiated GaN Layers. Appl. Phys. Lett. 2012 vol. 101 p. 072102.
  • [P24] Kisiel R., Guziewicz М., Gołaszewska-Malec K., Sochacki М., Paszkowicz W.: Mechanisms of Carriers Transport in Ni/n-SiC, Ti/n-SiC Ohmic Contacts. Mater. Sci.-Poland 2011 vol. 29 no. 3 p. 233-240.
  • [P25] Kisiel R., Szczepański Z., Firek P., Grochowski J., Myśliwiec М., Guziewicz М.: Silver Micropowders as SiC Die Attach Material for High Temperature Applications. Proc. of the 35th Int. Spring Sem. on Electronics Technology. Bad Aussee, Austria, 9-13.05.2012, p. 144-148.
  • [P26] Kochanowska D., Witkowska-Baran М., Mycielski A., Szadkowski A., Witkowska B., Kaliszek W., Domagała J., Jakieła R., Nowakowski P., Dużyńska A., Lach P., Kamińska A., Suchocki A., Reszka A., Kowalski B., Wojtowicz Т., Wiater М., Kaminski Р., Kozłowski R., Sidor Z., Juchniewicz М., Kamińska E.: Manufacturing the by Bridgman Method of 1.5 and 2 Inch (Cd,Mn)Te Crystal Rods and Their Characterization. IEEE Trans, on Nucl. Sci. (submit. to print).
  • [P27] Kruszka R., Gołaszewska-Malec K., Taube A., Sidor Z., Borysiewicz М., Żytkiewicz Z. R., Kamińska E., Piotrowska A.: Controlled Etching of Thin AlGaN Films Using BCl3/Ar Plasma for Al-GaN/GaN HEMT Technology. Elektronika 2012 vol. LIII no. 9 p. 20-22 (in Polish).
  • [P28] Kruszka R., Gołaszewska-Malec K., Taube A., Sidor Z., Borysiewicz M., Żytkiewicz Z. R., Kamińska E., Piotrowska A.: Controlled Etching of Thin AlGaN Films Using BCl3/Ar Plasma for Al-GaN/GaN HEMT Technology. Proc. of the XI Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 11-14.06.2012, p. 613-619 (in Polish).
  • [P29] Krysiński A., Taube A., Gołaszewska-Malec K., Śmietana М., Mroczyński R., Szmidt J.: Technology and Characterization of Thin-Film Transistors. Prz. Elektrotech. 2012 vol. 88 no. 11b p. 1-4 (in Polish).
  • [P30] Krysiński A., IMAPS Taube A., Gołaszewska-Malec K., Śmietana М., Mroczyński R., Szmidt J.: Technology and Characterization of Thin-Film Transistors. Proc. of the XI Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 11-14.06.2012, p. 103-108 (in Polish).
  • [P31] Kuchuk A., Kładko V. P., Golaszewska-Malec K., Guziewicz М., Wzorek М., Piotrowska A.: The Formation Mechanism of Ni-Based Ohmic Contacts to 4H-n-SiC. Mater. Sci. Forum 2012 vol. 717-720 s. 833-836.
  • [P32] Łaszcz A., Czerwiński A., Ratajczak J., Taube A., Gierałtowska S., Piotrowska A., Kątcki J.: Study of Oxides Formed in the HfO2/Si Structure for High-K Dielectric Applications. Solid St. Phenom. 2012 vol. 186 p. 78-81.
  • [P33] Ławniczak-Jabłońska K., Klepka М., Wolska A., Dynowska Borysiewicz M., Piotrowska A.: Complementary Application of X-Ray Diffraction and Absorption Spectroscopy for Thin Ti-Si-C Film Characterisation. Elektronika 2012 vol. LIII no. 9 p. 28-31 (in Polish).
  • [P34] Ławniczak-Jabłońska K., Klepka М., Wolska A., Dynowska E., Borysiewicz М., Piotrowska A.: Complementary Application of X-Ray Diffraction and Absorption Spectroscopy for Thin Ti-Si-C Film Characterisation. Proc. of the XI Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 11-14.06.2012, p. 640-645 (in Polish).
  • [P35] Mroczyński R., Taube A., Gierałtowska S., Guziewicz E., Godlewski М.: Application of Deposited by ALD HfO2 and A12O3 Layers in Double-Gate Dielectric Stacks for Non-Volatile Semiconductor Memory (NVSM) Devices. Appl. Surf. Sci. 2012 vol. 258 s. 8366-8370.
  • [P36] Sankowska I., Domagała J., Yefanov O., Jasik A., Kubacka-Traczyk J., Regiński K., Seeck O. H.: Non-Periodicity of Peak-to-Peak Distances in X-Ray Diffraction Spectrums from Perfect Superlattices. J. Appl. Phys. (submit. to print).
  • [P37] Sankowska I., Jasik A., Kubacka-Traczyk J., Domagała J., Regiński K.: Role of Beryllium Doping in Strain Changes in II-Type InAs/GaSb Superlattice Investigated by High Resolution X-Ray Diffraction Method. Appl. Phys. A 2012 vol. 108 no. 2 p. 491-496.
  • [P38] Struk P., Pustelny Т., Gołaszewska-Malec K., Borysiewicz М., Piotrowska A.: The Study of Sensor Structures Based on Zinc Oxide ZnO Interaction with the Selected Gas Environment. Elektronika 2012 vol. LIII no. 9 p. 55-56 (in Polish).
  • [P39] Struk P., Pustelny Т., Gołaszewska-Malec K., Borysiewicz М., Piotrowska A.: The Study of Sensor Structures Based on Zinc Oxide ZnO Interaction with the Selected Gas Environment. Proc. of the XI Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 11-14.06.2012, p. 635-639.
  • [P40] Świtkowski K., Jastrzębski С., Pałka N., Dyczewski J., Barcz A.: Performance of a Nitrogen Implanted Large Aperture THz Emitter. Photon. Lett. of Poland 2012 vol. 4 no. 1 p. 32-34.
  • [P41] Taube A., Kruszka R., Borysiewicz М., Gierałtowska S., Kamińska E., Piotrowska A.: High Quality Gate Insulator/GaN Interface for Enhancement-Mode Field Effect Transistor. Acta Phys. Pol. A 2012 vol. 120 no. 6-A p. 22-24.
  • [P42] Taube A., Mroczyński R., Korwin-Mikke K., Gierałtowska S., Szmidt J., Piotrowska A.: Effect of the Post-Deposition Annealing on Electrical Characteristics of MIS Structures with HfO2/SiO2 Gate Dielectrics Stacks. Mater. Sci. a. Eng. 5 2012 vol. 177 p. 1281-1285.
  • [P43] Taube A., Sochacki М., Szmidt J.: Modeling and Simulation of AlGaN/Gan HEMTs - Influence of Substrate Thermal Conductivity. Elektronika 2012 vol. LIII no. 9 p. 34-37 (in Polish).
  • [P44] Taube A., Sochacki М., Szmidt J.: Modeling and Simulation of AlGaN/GaN HEMTs - Influence of Substrate Thermal Conductivity. Proc. of the XI Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 11-14.06.2012, p. 646-652 (in Polish).
  • [P45] Taube A., Sochacki М., Szmidt J.: Modeling and Simulation of Advanced Structures of AlGaN/GaN HEMTs. Elektronika 2012 vol. LIII no. 9 p. 38-41 (in Polish).
  • [P46] Taube A., Sochacki М., Szmidt J.: Modeling and Simulation of Advanced Structures of AlGaN/GaN HEMTs. Proc. of the XI Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 11-14.06.2012, p. 653-658 (in Polish).
  • [P47] Volnianska O., Bogusławski P., Kamińska E.: Ag and N Acceptors in ZnO: An ab initio Study of Acceptor Pairing, Doping Efficiency, and the Role of Hydrogen. Phys. Rev. В 2012 vol. 85 p. 165212.
  • [P48] Wielgus М., Grochowski J., Kamińska E., Patorski K.: Continuous Wavelet Transform for d-Space Distribution Analysis in Nanocrystallic Materials. Advanced Topics in Optoelectronics, Microelectronics and Nanotechnologies [In] Proc. of SPIE 2012 vol. 8411 p. 84110A.
  • [Р49] Wielgus М., Patorski K.: Non-Local Fringe Image Filtration: a New Interferometric Data Filtration Paradigm? Photon. Lett. of Poland 2012 vol. 4 no. 2 p. 66-68.
  • [P50] Wzorek М., Czerwiński A., Kuchuk A., Ratajczak J., Piotrowska A., Kątcki J.: Ni- Based Ohmic Contacts to Silicon Carbide Examined by Electron Microscopy. Solid St. Phenom. 2012 vol. 186 p. 82-85.
  • [Р51] Zaremba G., Adamus Z., Jung W., Kamińska E., Borysiewicz М., Korwin-Mikke K.: The Role of Deep Level Traps in Barrier Height of 4H-SiC Schottky Diode. Mater. Sci. a. Eng. В 2012 vol. 177 p. 1323-1326.
  • [P52] Żytkiewicz Z. R., Sobańska М., Klosek K., Reszka A., Wierzbicka A., Kruszka R., Gołaszewska-Malec K., Setkiewicz М., Pustelny Т.: MBE Growth of GaN Nanowires on Si(111) Substrates for Gas Sensor Applications. Proc. of the 14th Int. Meet. on Chemical Sensors. Numberg, Germany, 20-23.05.2012, p. 1554-1556.
  • Conferences’2012
  • [C1] Amarasinghe V. P., Wieluński L., Barcz A., Feldman L. C., Celler G. K.: Optimization of H+ Implantation Parameters for Exfoliation of 4H-SiC Films. 222 Meet of the Electrochem. Soc. Honolulu, USA, 7-12.10.2012 (poster).
  • [C2] Barańska A., Szerling A., Karbownik P., Bugajski М., Hejduk K., Łaszcz A., Gołaszewska-Malec K.: Ohmic Contacts to n+ GaAs for Application in AlGaAs/GaAs QCL. XII Sem. “Surface and Thin Film Structures”. Szklarska Poręba, Poland, 9-12.05.2012 (commun., in Polish).
  • [C3] Borowicz P., Adamus Z., Ekielski М., Piotrowska A., Kuchuk A., Borysiewicz М., Kamińska E., Latek М.: Structural Investigation of Carbonic Layers in Ohmic Contacts - Comparison of Raman Spectra Measured with Irradiation through the Silicide Layer and Silicon Carbide Substrate. XI Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 11-14.06.2012 (poster, in Polish).
  • [C4] Borysiewicz М., Dynowska E., Kolkovsky V., Wielgus М., Gołaszewska-Malec K., Kamińska Е., Ekielski М., Struk Р., Pustelny Т., Piotrowska A.: Sputter Deposited ZnO Porous Films for Sensing Applications. 2012 MRS Fall Meet. Boston, USA, 25-30.11.2012 (poster).
  • [C5] Ekielski М., Sidor Z., Juchniewicz М., Płuska М., Wzorek М., Piotrowska А.: Fabrication of Polymer Stamp for NIL Patterning of GaN. Nano3D-Kassel. Kassel, Germany, 12-19.10.2012 (poster).
  • [C6] Ekielski М., Sidor Z., Juchniewicz М., Płuska М., Wzorek М., Piotrowska А., Kucharski R., Kolkovsky V., Żytkiewicz Z. R., Gruszka М.: GaN Photonic Structures Fabrication Using Nanoimprint Technology. XI Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 11-14.06.2012 (paper, in Polish).
  • [C7] Gołaszewska-Malec K., Taube A., Kruszka R., Borysiewicz М., Ekielski М., Juchniewicz М., Sidor Z., Nowek A., Myśliwiec М., Jung W., Jakieła R., Prystawko P., Leszczyński М., Kamińska E., Piotrowska A.: Nanoscale Surface Characterisation of AlGaN/GaN HEMTs with Recessed Ohmic and Schottky Contact Geometrie. 41st Jaszowiec Int. School and Conf. on the Physics of Semiconductor. Krynica Zdrój, Poland, 8-15.06.2012 (poster).
  • [C8] Grochowski J., Guziewicz M., Kruszka R., Kopalko K., Piotrowska A.: Fabrication and Characterization of p-NiO/n-ZnO Heterojunction Towards Transparent Diode. 35th Int. Spring Sem. on Electronics Technology. Bad Aussee, Austria, 9-13.05.2012 (poster).
  • [C9] Guziewicz M., Kisiel R., Szczepański Z., Wzorek M.: Silver. Metallization- for SiC Die Assembly and Wire,Connections.. 11th Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technology. Porquerolles, France, 30.05-1.06.2012 (commun.).
  • [C10] Guziewicz M., Klata P., Grochowski J., Gołaszewska-Malec K., Kamińska E., Domagała J., Witkowski B., Kandyla M., Chatzimanolis Ch., Kompitsas M., Piotrowska A.: Hydrogen Sensing Properties of Thin NiO Films Deposited by RF Sputtering. Eurosensors XXVI. Krakow, Poland, 9-12.09.2012 (poster).
  • [C11] Guziewicz M., Klata P., Kruszka R, Gołaszewska-Malec K., Dyczewski J., Dynowska E., Dybko K., Szot M., Story T., Mycielski A., Kamińska E., Piotrowska A.: Metallization for Ohmic Contact to PbMnTe Thermoelectric Module. 36th Int. Microelectronics and Packaging Conf. IMAPS-CPMT Poland 2012. Kołobrzeg, Poland, 26-29.09.2012 (poster).
  • [C12] Guziewicz M., Słysz W., Borysiewicz M., Domagała J., Kruszka R., Golaszewska-Malec K., Juchniewicz M., Sidor Z., Piskorska-Hommel E., Wilkens T.: Superconducting and Structural Properties of Nb(TiN) Films. 11th Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technology. Porquerolles, France, 30.05-1.06.2012 (commun.).
  • [C13] Guziewicz M., Wzorek M., Kisiel R.: Multilayer Metallization for SiC Die Assembly and Wire Bonding. 36th Int. Microelectronics and Packaging Conf. IMAPS-CPMT Poland 2012. Kołobrzeg, Poland, 26-29.09.2012 (poster).
  • [C14] Kandyla M., Chatzimanolis Ch., Tsikourkitoudi V., Kartsonakis I., Charitidis C., Kompitsas M., Guziewicz M.: Structural and Mechanical Properties of RF Magnetron Sputtered NiO Thin Films and Their Surface Sensitizing by Pd-Nanoparticles for Hydrogen Sensing below the One PPM Limit. 4th Int. Symp. on Transparent Conductive Materials TCM 2012. Hersonissos, Greece, 21-26.10.2012 (poster).
  • [C15] Kisiel R., Szczepański Z., Firek P., Grochowski J., Myśliwiec M., Guziewicz M.: Silver Micropowders as SiC Die Attach Material for High Temperature Applications. 35th Int. Spring Sem. on Electronics Technology. Bad Aussee, Austria, 9-13.05.2012 (poster).
  • [C16] Król K., Sochacki M, Turek M., Żuk J., Przewłocki H. M., Gutt T., Borowicz P., Guziewicz M., Szuber J., Kwoka M., Kościelniak P., Szmidt J.: Influence of Nitrogen Implantation on Electrical Properties of Al/SiO2/4H-SiC MOS Structure. The 9th Europ. Conf. on Silicon Carbide and Related Materials. St. Petersburg, Russia, 2-6.09.2012 (poster).
  • [C17] Kruszka R, Gołaszewska-Malec K., Taube A., Sidor Z., Borysiewicz M., Żytkiewicz Z. R, Kamińska E., Piotrowska A.: Controlled Etching of Thin AlGaN Films Using BCl3/Ar Plasma for Al-GaN/GaN HEMT Technology. XI Polish Conf. on Electronics. Darłówko Wschodnie, Poland, .11-14.06.2012 (poster, in Polish).
  • [C18] Krysiński A., Taube A., Gołaszewska-Malec K., Śmietana M., Mroczyński R., Szmidt J.: Fabrication and Characterization of Thin-Film Transistor (TFT) Structures XI Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 11-14.06.2012 (poster, in Polish).
  • [C19] Ławniczak-Jabłońska K., Klepka M., Wolska A., Dynowska E., Borysiewicz M., Piotrowska A.: Complementary Application of X-Ray Diffraction and Absorption Spectroscopy for Thin Ti-Si-C Film Characterisation. XI Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 11-14.06.2012 (poster, in Polish).
  • [C20] Patorski K., Wielgus М., Ekielski М.: Sensitivity Enhanced AFM Nano-Moire Method. III Polish Conf. on Nano and Micromechanics. Warsaw, Poland, 4-06.07.2012 (paper).
  • [C21] Słysz W., Guziewicz M., Borysiewicz М., Gołaszewska-Malec K., Domagała J., Sidor Z., Juchniewicz М., Ratajczak J., Bar J., Węgrzecki М., Panas A., Łaszcz A., Czerwiński A., Sobolewski R.: Ultrathin NbN and NbTiN Nanostructures for Superconducting Photodetectors, Progress in Applied Surface, Interface and Thin Film Science 2012. Florence, Italy, 14-19.05.2012 (poster).
  • [C22] Słysz W., Guziewicz М., Borysiewicz М., Gołaszewska-Malec K., Domagała J., Sidor Z., Juchniewicz М., Ratajczak J., Kolkovsky V., Bar J., Węgrzecki М., Panas A., Węgrzecka I., Sikora F., Łaszcz A., Czerwiński A., Sobolewski R.: Superconducting Thin Films with High Critical Current Densities for Very Sensitive Photodetectors. IXth Int. Conf. on Ion Implantation and Other Applications of Ions and Electrons. Kazimierz Dolny, Poland, 25-28.06.2012 (poster).
  • [C23] Struk P., Pustelny Т., Gołaszewska-Malec K., Borysiewicz М., Piotrowska A.: Study of Sensor Structures Based on Zinc Oxide ZnO Interaction with the Selected Gas XI Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 11-14.06.2012 (paper, in Polish).
  • [C24] Taube A., Sochacki М., Szmidt J.: Modeling and Simulation of AlGaN/GaN HEMTs- Influence of Substrate Thermal Conductivity. XI Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 11-14.06.2012 (poster, in Polish).
  • [C25] Taube A., Sochacki М., Szmidt J.: Modeling and Simulation of Advanced Structures of AlGaN/GaN HEMTs. XI Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 11-14.06.2012 (poster, in Polish).
  • [C26] Wielgus М., Grochowski J., Kamińska E., Patorski K: Continuous Wavelet Transform for d-Space Distribution Analysis in Nanocrystallic Materials. Advanced Topics in Optoelectronics, Microelectronics and Nanotechnologies. Konstancja, Romania, 23-26.08.2012 (paper).
  • [C27] Wzorek М., Guziewicz М., Czerwiński A., Ratajczak J., Piotrowska A., Kątcki J.: Microstructure of Ti/TaSiN/Ag and Ni/Au Multi-Layer Contact Metallization to n-SiC. XI Polish Conf. on Electronics, Darłówko Wschodnie, Poland, 11-14.06.2012 (poster, in Polish).
  • [C28] Zgirski М., Nowek A., Trushkin S., Kruszka R., Kamińska E., Piotrowska A.: Fabrication of T-Type Gates of a HEMT by Means of Electron Lithography. XI Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 11-14.06.2012 (paper, in Polish).
  • [C29] Zytkiewicz Z. R., Sobańska М., Klosek K., Reszka A., Wierzbicka A., Kruszka R., Gołaszewska-Malec K, Setkiewicz М., Pustelny Т.: MBE Growth of GaN Nanowires on Si(111) Substrates for Gas Sensor Applications. The 14th Int. Meet. on Chemical Sensors. Nurnberg, Germany, 20-23.05.2012 (poster).
  • Patents’2012
  • [PA1] Ekielski М., Sidor Z., Juchniewicz М.: A Method to Fabricate a HEMT. Pat. Appl. no. P. 398719 (in Polish).
  • [PA2] Guziewicz М., Kamińska E.: Metallization to PbTe-Based Thermoelectric Materials and a Method to Fabricate This Metallization. Pat. Appl. no. P399296 (in Polish).
  • [PA4] Ekielski М., Sidor Z., Juchniewicz М.: A Method to Fabricate 3D Patterns for Semiconductor Devices. Pat. Appl. no. 399788.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-5c51d9ba-ded1-41c1-9c93-3318eba4c30e
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