Aktywna metoda kontroli rozkładu napięć na szeregowo połączonych tranzystorach SiC MOSFET w łączniku 3,3 kV

• Autorzy: Trochimiuk Przemyslaw

Identyfikatory

DOI

10.15199/48.2020.07.15

Warianty tytułu

EN

Active voltage balancing of series connected SiC MOSFETs in 3,3 kV power switch

• Języki publikacji: PL

Abstrakty

PL

Niniejszy artykuł omawia aktywną metodą kompensacji nierównomiernego rozkładu napięć na szeregowo połączonych tranzystorach łącznika energoelektronicznego średniego napięcia, zbudowanego z wykorzystaniem modułów SiC MOSFET o napięciu przebicia 1,7 kV. Dzięki pomiarom napięć oraz odpowiedniemu opóźnieniu sygnałów sterujących można wyrównać napięcia na tranzystorach nie zwiększając czasów przełączania i energii wytracanych w tranzystorach. Artykuł ilustruje wyniki badań symulacyjnych i eksperymentalnych opracowanego łącznika przy napięciu 1,5 kV i prądzie 150 A.

EN

These paper presents active voltage balancing method of series connected transistors in medium voltage power switch, built of 1,7 kV SiC MOSFET modules. By measuring appropriate voltages in the power circuit and delaying the gate signals, it is possible to provide equal voltage sharing between transistors, without increasing the switching times and losses. The article illustrates the results of simulation study and laboratory experiments of developed power switch at 1,5 kV and 150 A.

Słowa kluczowe

PL

SiC MOSFET; szeregowe łączenie; aktywne wyrównywanie napięć

EN

SiC Mosfet; series-connection; active voltage sharing

• Wydawca: Wydawnictwo SIGMA-NOT
• Czasopismo: Przegląd Elektrotechniczny
• Rocznik: 2020
• Tom: R. 96, nr 7
• Strony: 80--85
• Opis fizyczny: Bibliogr. 25 poz., rys., tab.

Twórcy

autor

Trochimiuk Przemyslaw

• Politechnika Warszawska, Instytut Sterowania i Elektroniki Przemysłowej, ul. Koszykowa 75, 00-662 Warszawa

Bibliografia

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Uwagi

Opracowanie rekordu ze środków MNiSW, umowa Nr 461252 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2020).