Extended T-type inverter

• Autorzy: Rąbkowski J. , Kopacz R.

Identyfikatory

DOI

10.2478/pead-2018-0015

• Języki publikacji: EN

Abstrakty

EN

This paper presents a new concept for a power electronic converter – the extended T-type (eT) inverter, which is a combination of a three-phase inverter and a three-level direct current (dc)/dc converter. The novel converter shows better performance than a comparable system composed of two converters: a T-type inverter and a boost converter. At first, the three-level dc/dc converter is able to boost the input voltage but also affects the neutral point potential. The operation principles of the eT inverter are explained and a simulation study of the SiC-based 6 kVA system is presented in this paper. Presented results show a serious reduction of the DC-link capacitors and the input inductor. Furthermore, suitable SiC power semiconductor devices are selected and power losses are estimated using Saber software in reference to a comparative T-type inverter. According to the simulations, the 50 kHz/6 kVA inverter feed from the low voltage (250 V) shows <2.5% of power losses in the suggested SiC metal oxide–semiconductor field-effect transistors (MOSFETs) and Schottky diodes. Finally, a 6 kVA laboratory model was designed, built and tested. Conducted measurements show that despite low capacitance (2 × 30 μF/450 V), the neutral point potential is balanced, and the observed efficiency of the inverter is around 96%.

Słowa kluczowe

EN

multilevel inverter; T-type inverter; boost converter; silicon carbide

• Wydawca: De Gruyter
• Czasopismo: Power Electronics and Drives
• Rocznik: 2018
• Tom: Vol. 3 (38), No. 1
• Strony: 55--64
• Opis fizyczny: Bibliogr. 13 poz., rys., tab.

Twórcy

autor

Rąbkowski J.

• Warsaw University of Technology, Institute of Control and Industrial Electronics, Koszykowa 75, 00-662 Warsaw, Poland

autor

Kopacz R.

• Warsaw University of Technology, Institute of Control and Industrial Electronics, Koszykowa 75, 00-662 Warsaw, Poland

Bibliografia

• Abu-Rub, H., Malinowski, M. and Al-Haddad, H. (2014). Power Electronics for Renewable Energy Systems, Transportation and Industrial Applications. Hoboken, NJ: Wiley.
• Anthon, A., Zhang, Z., Andersen, M., Holmes, G., McGrath, B. and Teixeira, C. A. (2016a). Comparative Evaluation of the Loss and Thermal Performance of Advanced Three-Level Inverter Topologies. IEEE Transactions on Industry Applications, 53(2), pp. 1381-1389.
• Anthon, A., Zhang, Z., Andersen, M., Holmes, G., McGrath, B. and Teixeira, C. A. (2016b). The Benefits of SiC mMosfets in a T-Type Inverter for Grid-Tie Applications. IEEE Transactions on Power Electronics, 32(4), pp. 2808-2821.
• Furusho, Y. and Fuji, K. (2016). 1-MW solar power conditioning system with boost converter using all-SiC power module. In: Proceedings of 9th International Conference on Integrated Power Electronics Systems CIPS 2016, Nuremberg, Germany: VDE, pp. 1-5.
• Grbovic, P., Delaure, P., Le Moigne, P. and Bartholomeus, P. (2012). A Three-Terminal Ultracapacitor-Based Energy Storage and PFC Device for Regenerative Controlled Electric Drives. IEEE Transactions on Industrial Electronics, 59(1), pp. 301-316.
• Gu, M., Xu, P., Zhang, L. and Sun, K (2015). A SiC-based T-type three-phase three-level grid tied inverter. In: Proceedings of 10th Conference on Industrial Electronics and Applications (ICIEA), Auckland: IEEE, pp. 1116-1121.
• Gurpinar, E. and Castelazzi, A. (2015). Single-Phase T-Type Inverter Performance Benchmark Using Si IGBTs, SiC MOSFETs and GaN HEMTs. IEEE Transactions on Power Electronics, 31(10), pp. 7148-7160.
• Rąbkowski, J., Barlik, R., Matulka, J. and Nowak, M. (2002). An extended structure of NPC three level converter as a universal power compensator. In: Proceedings of the EPE-PEMEC Conference, Dubrovnik-Cavtat: PEMC, pp. 1-8.
• Rąbkowski, J., Sak, T., Strzelecki, R. and Grabarek, M. (2017). SiC-based T-type modules for multi-pulse inverter with coupled inductors. In: Proceedings of 11th IEEE International Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG), Cadiz: IEEE, pp. 568-572.
• Schweizer, M. and Kolar, J. W. (2013). Design and Implementation of a Hybrid Efficient Three-Level T-Type Converter for Low-Voltage Applications. IEEE Transactions on Power Electronics, 28(2), pp. 899-907.
• Shi, Y., Shi, Y., Wang, L., Xie, R. and Li., H. (2016). A 50kW high power density paralleled-five-level PV converter based on SiC T-type MOSFET modules. In: Proceedings of Energy Conversion Congress and Exposition (ECCE), Milwaukee: IEEE, pp. 1-8.
• Shi, Y., Xie, R., Wang, L., Shi, Y. and Li., H. (2017). Switching Characterization and Short-Circuit Protection of 1200 V SiC MOSFET T-Type Module in PV Inverter Application. IEEE Transactions on Industrial Electronics, 64(11), pp. 9135-9143.
• Uemura, H., Krismer, F. and Kolar, J. W. (2013). Comparative evaluation of T-type topologies comprising standard and reverse-blocking IGBTs. In: Proceedings of 39th IECON 2013 Conference, 10-14 November 2013, Vienna: Austria Center Vienna, pp. 1288-1295.