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Tytuł artykułu

Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride

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Języki publikacji
EN
Abstrakty
EN
Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride film grown by molecular beam epitaxy was studied with the use of transmission electron microscopy and optical reflection. Strong influence of the graded-gap surface layer grown on top of the film on the behaviour of implantation-induced defects under arsenic activation annealing was revealed and interpreted.
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Twórcy
autor
  • Scientific Research Company “Electron-Carat”, Lviv, 79031, Ukraine National Research Tomsk State University, Tomsk, 634050, Russia
  • Hetman Petro Sahaidachny National Army Academy, Lviv, 79012, Ukraine
autor
  • Institute of Metallurgy and Material Science PAN, Krakow, 30-059, Poland
autor
  • Institute of Metallurgy and Material Science PAN, Krakow, 30-059, Poland
  • Ya.S. Pidstryhach Institute for Applied Problems of Mechanics and Mathematics NASU, Lviv, 79060, Ukraine
  • Ya.S. Pidstryhach Institute for Applied Problems of Mechanics and Mathematics NASU, Lviv, 79060, Ukraine
  • Ioffe Institute, Saint–Petersburg, 194021, Russia
  • ITMO University, Saint–Petersburg, 197101, Russia
  • National Research Tomsk State University, Tomsk, 634050, Russia
  • National Research Tomsk State University, Tomsk, 634050, Russia
  • A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk, 630090, Russia
  • A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk, 630090, Russia
  • A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk, 630090, Russia
  • National Research Tomsk State University, Tomsk, 634050, Russia
  • A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk, 630090, Russia
Bibliografia
  • [1] W. Lei, J. Antoszewski, L. Faraone, Progress, challenges, and opportunities forHgCdTe infrared materials and detectors, Appl. Phys. Rev. 2 (2015), 041303.
  • [2] C. Lobre, P.H. Jouneau, L. Mollard, P. Ballet, Characterization of themicrostructure of HgCdTe with p-type doping, J. Electron. Mater. 43 (2014)2908–2914.
  • [3] L. Mollard, G. Destefanis, N. Baier, J. Rothman, P. Ballet, J.P. Zanatta, M.Tchagaspanian, A.M. Papon, G. Bourgeois, J.P. Barnes, C. Pautet, P. Fougeres,Planar p-on-n HgCdTe FPAs by arsenic ion implantation, J. Electron. Mater. 38(2009) 1805–1813.
  • [4] L. Mollard, G. Destefanis, G. Bourgeois, A. Ferron, N. Baier, O. Gravrand, J.P.Barnes, A.M. Papon, F. Milesi, A. Kerlain, L. Rubaldo, Status of p-on-narsenic-implanted HgCdTe technologies, J. Electron. Mater. 40 (2011)1830–1839.
  • [5] C.Z. Shi, C. Lin, Y.F. Wei, L. Chen, M. Zhu, Barrier layer induced channelingeffect of As ion implantation in HgCdTe and its influences on electricalproperties of p–n junctions, Appl. Optics 55 (2016) D101–D105.
  • [6] M.V. Yakushev, A.K. Gutakovsky, I.V. Sabinina, Yu.G. Sidorov, Defects in thecrystal structure of CdxHg1−xTe layers grown on the Si (310) substrates,Semiconductors 45 (2011) 926–934.
  • [7] O.Yu Bonchyk, H.V. Savytskyy, Z. Swiatek, Y. Morgiel, I.I. Izhnin, A.V.Voitsekhovskii, A.G. Korotaev, K.D. Mynbaev, O.I. Fitsych, V.S. Varavin, S.A.Dvoretsky, D.V. Marin, M.V. Yakushev, Nano-size defects in arsenic-implantedHgCdTe films: a HRTEM study, Appl. Nanosci. (2019), http://dx.doi.org/10.1007/s13204-018-0679-y, in press.
  • [8] H. Arwin, D.E. Aspnes, Nondestructive analysis of Hg1−xCdxTe (x=0.00, 0.20,0.29, and 1.00) by spectroscopic ellipsometry. II. Substrate, oxide andinterface properties, J. Vac. Sci. Technol. A 2 (1984) 1316–1323.
  • [9] P. Koppel, Visible and ultraviolet reflectivity of Hg1−xCdxTe, J. Appl. Phys. 57(1985) 1705–1709.
  • [10] S.A. Dvoretsky, N.N. Mikhailov, V.G. Remesnik, N.Kh. Talipov, Using reflectionspectroscopy for assessing structural perfection of CdTe/GaAs films andCdxHg1-xTe crystals, Avtometriya 5 (1998) 73–77, in Russian.
  • [11] I.I. Izhnin, E.I. Fitsych, A.V. Voitsekhovskii, A.G. Korotaev, K.D. Mynbaev, V.S.Varavin, S.A. Dvoretsky, N.N. Mikhailov, M.V. Yakushev, A.Yu. Bonchyk, H.V.Savytskyy, Z. Świątek, Defects in arsenic-implanted р+–n- andn+–p-structures based on MBE-grown CdHgTe films, Russ. Phys. J. 60 (2018)1752–1757.
  • [12] O.I. Fitsych, A.V. Voitsekhovskii, D.V. Grigorjev, N.N. Mikhailov, N.H. Talipov, K.D. Mynbaev, I.I. Izhnin, Ion implantation and ion milling in MBE Hg1-xCdxTefilms, Nucl. Instrum. Methods Phys. Res. B 272 (2012) 313–317.
Uwagi
Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2019).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-59a80732-8768-41aa-8bff-69e9c4088845
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