Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride

• Autorzy: Izhnin Ihor , Fitsych Olena I. , Świątek Z. , Morgiel Y. , Bonchyk Oleksandr Yu , Savytskyy Hrygoriy V. , Mynbaev Karim , Voitsekhovskii Alexander V. , Korotaev Alexander G. , Yakushev Maksim Vitalievich , Marin Denis V. , Varavin Vasilii S. , Dvoretsky Sergey Alekseevich

Identyfikatory

DOI

10.1016/j.opelre.2019.01.002

• Języki publikacji: EN

Abstrakty

EN

Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride film grown by molecular beam epitaxy was studied with the use of transmission electron microscopy and optical reflection. Strong influence of the graded-gap surface layer grown on top of the film on the behaviour of implantation-induced defects under arsenic activation annealing was revealed and interpreted.

Słowa kluczowe

EN

HgCdTe; implantation; defects; microscopy

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2019
• Tom: Vol. 27, No. 1
• Strony: 14--17
• Opis fizyczny: Bibliogr. 12 poz., wykr.

Twórcy

autor

Izhnin Ihor

• Scientific Research Company “Electron-Carat”, Lviv, 79031, Ukraine National Research Tomsk State University, Tomsk, 634050, Russia

autor

Fitsych Olena I.

• Hetman Petro Sahaidachny National Army Academy, Lviv, 79012, Ukraine

autor

Świątek Z.

• Institute of Metallurgy and Material Science PAN, Krakow, 30-059, Poland

autor

Morgiel Y.

• Institute of Metallurgy and Material Science PAN, Krakow, 30-059, Poland

autor

Bonchyk Oleksandr Yu

• Ya.S. Pidstryhach Institute for Applied Problems of Mechanics and Mathematics NASU, Lviv, 79060, Ukraine

autor

Savytskyy Hrygoriy V.

• Ya.S. Pidstryhach Institute for Applied Problems of Mechanics and Mathematics NASU, Lviv, 79060, Ukraine

autor

Mynbaev Karim

• Ioffe Institute, Saint–Petersburg, 194021, Russia
• ITMO University, Saint–Petersburg, 197101, Russia

autor

Voitsekhovskii Alexander V.

• National Research Tomsk State University, Tomsk, 634050, Russia

autor

Korotaev Alexander G.

• National Research Tomsk State University, Tomsk, 634050, Russia

autor

Yakushev Maksim Vitalievich

• A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk, 630090, Russia

autor

Marin Denis V.

• A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk, 630090, Russia

autor

Varavin Vasilii S.

• A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk, 630090, Russia

autor

Dvoretsky Sergey Alekseevich

• National Research Tomsk State University, Tomsk, 634050, Russia
• A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk, 630090, Russia

Bibliografia

• [1] W. Lei, J. Antoszewski, L. Faraone, Progress, challenges, and opportunities forHgCdTe infrared materials and detectors, Appl. Phys. Rev. 2 (2015), 041303.
• [2] C. Lobre, P.H. Jouneau, L. Mollard, P. Ballet, Characterization of themicrostructure of HgCdTe with p-type doping, J. Electron. Mater. 43 (2014)2908–2914.
• [3] L. Mollard, G. Destefanis, N. Baier, J. Rothman, P. Ballet, J.P. Zanatta, M.Tchagaspanian, A.M. Papon, G. Bourgeois, J.P. Barnes, C. Pautet, P. Fougeres,Planar p-on-n HgCdTe FPAs by arsenic ion implantation, J. Electron. Mater. 38(2009) 1805–1813.
• [4] L. Mollard, G. Destefanis, G. Bourgeois, A. Ferron, N. Baier, O. Gravrand, J.P.Barnes, A.M. Papon, F. Milesi, A. Kerlain, L. Rubaldo, Status of p-on-narsenic-implanted HgCdTe technologies, J. Electron. Mater. 40 (2011)1830–1839.
• [5] C.Z. Shi, C. Lin, Y.F. Wei, L. Chen, M. Zhu, Barrier layer induced channelingeffect of As ion implantation in HgCdTe and its influences on electricalproperties of p–n junctions, Appl. Optics 55 (2016) D101–D105.
• [6] M.V. Yakushev, A.K. Gutakovsky, I.V. Sabinina, Yu.G. Sidorov, Defects in thecrystal structure of CdxHg1−xTe layers grown on the Si (310) substrates,Semiconductors 45 (2011) 926–934.
• [7] O.Yu Bonchyk, H.V. Savytskyy, Z. Swiatek, Y. Morgiel, I.I. Izhnin, A.V.Voitsekhovskii, A.G. Korotaev, K.D. Mynbaev, O.I. Fitsych, V.S. Varavin, S.A.Dvoretsky, D.V. Marin, M.V. Yakushev, Nano-size defects in arsenic-implantedHgCdTe films: a HRTEM study, Appl. Nanosci. (2019), http://dx.doi.org/10.1007/s13204-018-0679-y, in press.
• [8] H. Arwin, D.E. Aspnes, Nondestructive analysis of Hg1−xCdxTe (x=0.00, 0.20,0.29, and 1.00) by spectroscopic ellipsometry. II. Substrate, oxide andinterface properties, J. Vac. Sci. Technol. A 2 (1984) 1316–1323.
• [9] P. Koppel, Visible and ultraviolet reflectivity of Hg1−xCdxTe, J. Appl. Phys. 57(1985) 1705–1709.
• [10] S.A. Dvoretsky, N.N. Mikhailov, V.G. Remesnik, N.Kh. Talipov, Using reflectionspectroscopy for assessing structural perfection of CdTe/GaAs films andCdxHg1-xTe crystals, Avtometriya 5 (1998) 73–77, in Russian.
• [11] I.I. Izhnin, E.I. Fitsych, A.V. Voitsekhovskii, A.G. Korotaev, K.D. Mynbaev, V.S.Varavin, S.A. Dvoretsky, N.N. Mikhailov, M.V. Yakushev, A.Yu. Bonchyk, H.V.Savytskyy, Z. Świątek, Defects in arsenic-implanted р+–n- andn+–p-structures based on MBE-grown CdHgTe films, Russ. Phys. J. 60 (2018)1752–1757.
• [12] O.I. Fitsych, A.V. Voitsekhovskii, D.V. Grigorjev, N.N. Mikhailov, N.H. Talipov, K.D. Mynbaev, I.I. Izhnin, Ion implantation and ion milling in MBE Hg1-xCdxTefilms, Nucl. Instrum. Methods Phys. Res. B 272 (2012) 313–317.

Uwagi

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2019).