Oscillator strength of optical transitions in InGaAsN/GaAsN/GaAs quantum wells

• Autorzy: Mika A , Sek G , Ryczko K , Kozub M , Musial A , Marynski A , Misiewicz J , Langer F , Höfling S , Appel T , Kamp M , Forchel A
• Języki publikacji: EN

Abstrakty

EN

Experimental and theoretical considerations and results on the effect of nitrogen incorporation on the oscillator strength of optical transitions in InGaNAs/GaAs quantum wells (QWs) are presented. Therefore, a set of dilute nitride quantum well structures was grown by molecular beam epitaxy. Optical investigation via spectroscopic methods have been performed at various temperatures for both the as-grown samples, and after rapid thermal annealing. The fundamental transition energy and its oscillator strength vs. the QW composition have been systematically investigated. Additionally, the effect of the bandgap discontinuities on the transitions intensity has also been considered. The experimental data have been confronted with the band structure calculations within the effective mass approximation employing a two level repulsion model for the nitrogen-containing structures. The obtained results are crucial for possible future applications employing the quantum well in cavity structures and bringing the practical exploitation of quantum electrodynamics phenomena to the telecommunication spectral range.

Słowa kluczowe

EN

dilute nitride; quantum well; oscillator strength

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2013
• Tom: Vol. 43, nr 1
• Strony: 53--60
• Opis fizyczny: Bibliogr. 11 poz., rys., tab., wykr.

Twórcy

autor

Mika A

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

autor

Sek G

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

autor

Ryczko K

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

autor

Kozub M

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

autor

Musial A

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

autor

Marynski A

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

autor

Misiewicz J

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

autor

Langer F

• Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

autor

Höfling S

• Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

autor

Appel T

• Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

autor

Kamp M

• Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

autor

Forchel A

• Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

Bibliografia

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