Noise Properties Of Thick-Film Conducting Lines For Integrated Inductors

• Autorzy: Stadler A. W. , Kolek A. , Mleczko K. , Zawiślak Z. , Dziedzic A. , Nowak D.

Identyfikatory

DOI

10.1515/mms-2015-0021

• Języki publikacji: EN

Abstrakty

EN

Studies of noise properties of thick-film conducting lines from Au or PdAg conductive pastes on LTCC or alumina substrates are reported. Experiments have been carried out at the room temperature on samples prepared in the form of meanders by traditional screen-printing or laser-shaping technique. Due to a low resistance of the devices under test (DUTs), low-frequency noise spectra have been measured for the dc-biased samples arranged in a bridge configuration, transformer-coupled to a low-noise amplifier. The detailed analysis of noise sources in the signal path and its transfer function, including the transformer, has been carried out, and a procedure for measurement setup self-calibration has been described. The 1/f noise component originating from resistance fluctuations has been found to be dominant in all DUTs. The analysis of experimental data leads to the conclusion that noise is produced in the bends of meanders rather than in their straight segments. It occurs that noise of Au-based laser-shaped lines is significantly smaller than screen-printed ones. PdAg lines have been found more resistive but simultaneously less noisy than Au-based lines.

Słowa kluczowe

EN

low-frequency noise; thick-film conducting layer; thick-film inductor

• Wydawca: Komitet Metrologii i Aparatury Naukowej PAN
• Czasopismo: Metrology and Measurement Systems
• Rocznik: 2015
• Tom: Vol. 22, nr 2
• Strony: 229--240
• Opis fizyczny: Bibliogr. 22 poz., rys., tab., wykr., wzory

Twórcy

autor

Stadler A. W.

• Rzeszów University of Technology, Department of Electronics Fundamentals, Powstańców Warszawy 12, 35-959 Rzeszów, Poland

autor

Kolek A.

• Rzeszów University of Technology, Department of Electronics Fundamentals, Powstańców Warszawy 12, 35-959 Rzeszów, Poland

autor

Mleczko K.

• Rzeszów University of Technology, Department of Electronics Fundamentals, Powstańców Warszawy 12, 35-959 Rzeszów, Poland

autor

Zawiślak Z.

• Rzeszów University of Technology, Department of Electronics Fundamentals, Powstańców Warszawy 12, 35-959 Rzeszów, Poland

autor

Dziedzic A.

• Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

autor

Nowak D.

• Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

Bibliografia

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Uwagi

EN

The work has been supported from Grant DEC-2011/01/B/ST7/06564 funded by National Science Centre (Poland) and from Rzeszow University of Technology, Department of Electronics Fundamentals Grant for Statutory Activity (DS). Studies have been performed with the use of the equipment purchased in the project No. POPW.01.03.00-18-012/09 from the Structural Funds, The Development of Eastern Poland Operational Programme cofinanced by the European Union, the European Regional Development Fund.