Wpływ domieszkowania na właściwości węglika krzemu (SiC) : przegląd

• Autorzy: Racka-Szmidt K.

Identyfikatory

DOI

10.15199/13.2015.12.14

Warianty tytułu

EN

The influence of doping on properties of the silicon carbide (SiC) : a review

• Języki publikacji: PL

Abstrakty

PL

W pracy przedstawiono przegląd literatury dotyczący domieszkowania węglika krzemu (SiC) – materiału półprzewodnikowego perspektywicznego dla szeregu istotnych zastosowań w sensoryce, spintronice, optoelektronice oraz w przyrządach półprzewodnikowych dużej mocy, wielkiej częstotliwości i wysokich temperatur. Zaprezentowano podstawowe parametry domieszek oraz ich wpływ na właściwości elektryczne, magnetyczne i optyczne SiC. Na tle doniesień literaturowych pokazano własne wyniki badań właściwości optycznych domieszkowanych kryształów SiC otrzymanych metodą transportu fizycznego z fazy gazowej (PVT).

EN

The paper presents a review of the literature which concerns a doping of the silicon carbide (SiC) – a semiconductor material which is a prospective material for many of important applications in sensorics, spintronics, optoelectronics and for high-power, high-frequency and high-temperature semiconductor devices. Basic parameters of dopants and their influence on electrical, magnetic and optical properties of SiC have been presented. Own results of investigations of optical properties of doped SiC crystals, obtained by physical vapor transport method (PVT), have been shown on the background of the literature.

Słowa kluczowe

PL

SiC; domieszki; domieszkowanie; wzrost z fazy gazowej; PVT; charakteryzacja; właściwości elektryczne; właściwości magnetyczne; właściwości optyczne

EN

SiC; dopants; doping; growth from vapor; PVT; characterization; electrical properties; magnetic properties; optical properties

• Wydawca: Wydawnictwo SIGMA-NOT
• Czasopismo: Elektronika : konstrukcje, technologie, zastosowania
• Rocznik: 2015
• Tom: Vol. 56, nr 12
• Strony: 67--83
• Opis fizyczny: Bibliogr. 97 poz., il., rys., wykr.

Twórcy

autor

Racka-Szmidt K.

• Instytut Technologii Materiałów Elektronicznych, Warszawa

Bibliografia

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