Effect of calcination temperature on the structural, optical and magnetic properties of pure and Fe-doped ZnO nanoparticles

• Autorzy: Singh R. P. P. , Hudiara I. S. , Rana S. B.

Identyfikatory

DOI

10.1515/msp-2016-0059

• Języki publikacji: EN

Abstrakty

EN

In the present study, pure ZnO and Fe-doped ZnO (Zn_0.97Fe_0.03O) nanoparticles were synthesized by simple coprecipitation method with zinc acetate, ferric nitrate and sodium hydroxide precursors. Pure ZnO and Fe-doped ZnO were further calcined at 450 ºC, 600 ºC and 750 ºC for 2 h. The structural, morphological and optical properties of the samples were characterized by X-ray diffractometer (XRD), scanning electron microscope (SEM), energy dispersive spectroscopy (EDS) and UV-Vis absorption spectroscopy. The X-ray diffraction studies revealed that the as-synthesized pure and doped ZnO nanoparticles have hexagonal wurtzite structure. The average crystallite size was calculated using Debye-Scherrer’s formula. The particle size was found to be in nano range and increased with an increase in calcination temperature. SEM micrographs confirmed the formation of spherical nanoparticles. Elemental compositions of various elements in pure and doped ZnO nanoparticles were determined by EDX spectroscopy. UV-Vis absorption spectra showed red shift (decrease in band gap) with increasing calcination temperature. Effect of calcination on the magnetic properties of Fe-doped ZnO sample was also studied using vibrating sample magnetometer (VSM). M-H curves at room temperature revealed that coercivity and remanent polarization increase with an increase in calcination temperature from 450 ºC to 750 ºC, whereas reverse effect was observed for magnetization saturation.

Słowa kluczowe

EN

ZnO nanoparticles; co-precipitation; X-ray diffractometer; optical properties; UV-Vis absorption spectroscopy

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2016
• Tom: Vol. 34, No. 2
• Strony: 451--459
• Opis fizyczny: Bibliogr. 35 poz., rys., tab.

Twórcy

autor

Singh R. P. P.

• Department of Electronics & Communication Engineering, Desh Bhagat University, Mandi Gobindgarh, India

autor

Hudiara I. S.

• Chitkara University (Punjab Campus), Chandigarh, India

autor

Rana S. B.

• Department of Electronics & Communication Engineering, GNDU Regional Campus, Gurdaspur, India

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Uwagi

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę.