Influence of Bi3+ content on photoluminescence of InNbO4:Eu3+,Bi3+ for white light-emitting diodes

• Autorzy: Tang A. , Gu L. , Shao F. , Liu X. , Zhao Y. , Chen H. , Zhang H.

Identyfikatory

DOI

10.1515/msp-2017-0053

• Języki publikacji: EN

Abstrakty

EN

A series of red-emitting phosphors InNbO₄:Eu₃₊,Bi₃₊ was prepared by a high temperature solid-state reaction. The structure, size distribution and luminescence properties of the phosphors were respectively characterized by X-ray diffraction (XRD), laser particle size and molecular fluorescence spectrometer. The XRD results indicate that the phase-pure samples have been obtained and the crystal structure of the host has not changed under the Eu³⁺ and Bi³⁺ co-doping. The test of size distribution shows that the phosphor has a normal size distribution. The excitation spectra illustrate that the dominant sharp peaks are located at 394 nm (⁷F₀→⁵L₆) and 466 nm (⁷F₀→⁵D₂). Meanwhile, the emission spectra reveal that the phosphors excited by the wavelength of 394 nm or 466 nm have an intense red-emission line at 612 nm owing to the ⁵D₀→(⁷F₂ transition of Eu³⁺. Bi³⁺ doping has not changed the peak positions except the photoluminescence intensity. The emission intensity is related to Bi³⁺ concentration, and it is up to the maximum when the Bi³⁺-doping concentration is 4 mol%. Due to good photoluminescence properties of the phosphor, the InNbO₄:0.04Eu³⁺,0.04Bi³⁺ may be used as a red component for white light-emitting diodes.

Słowa kluczowe

EN

red-emitting phosphor; photoluminescence properties; white LEDs; InNbO4; solid-state reaction

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2017
• Tom: Vol. 35, No. 2
• Strony: 435--439
• Opis fizyczny: Bibliogr. 35 poz., rys.

Twórcy

autor

Tang A.

• Department of Mechanical Engineering, Henan Institute of Engineering, Zhengzhou, Henan 451191, China

autor

Gu L.

• Department of Mechanics, Henan Mechanical and Electrical Vocational College, Zhengzhou, Henan, 451191, China

autor

Shao F.

• Department of Mechanical Engineering, Henan Institute of Engineering, Zhengzhou, Henan 451191, China

autor

Liu X.

• Department of Mechanical Engineering, Henan Institute of Engineering, Zhengzhou, Henan 451191, China

autor

Zhao Y.

• Department of Mechanical Engineering, Henan Institute of Engineering, Zhengzhou, Henan 451191, China

autor

Chen H.

• Department of Mechanical Engineering, Henan Institute of Engineering, Zhengzhou, Henan 451191, China

autor

Zhang H.

• Department of Mechanical Engineering, Henan Institute of Engineering, Zhengzhou, Henan 451191, China

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Uwagi

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017).