Crystallographic properties of the HgCdTe layers grown by MBE on CdZnTe(211)B substrates

• Autorzy: Rogalska Iwona , Ruszała Marta , Grendysa Jakub , Juś Anna , Wojnarowska-Nowak Renata , Marchewka Michał , Wojtowicz Tomasz

Identyfikatory

DOI

10.24425/opelre.2025.153809

• Języki publikacji: EN

Abstrakty

EN

A review of the specificity of the growth Hg₁-𝑥Cd𝑥Te layers by molecular beam epitaxy (MBE) and results of experimental studies of several Hg₁-𝑥Cd𝑥Te layers grown on Cd𝑦Zn1-𝑦Te (CZT) substrates are presented. It is well known that the performance of Hg₁-𝑥Cd𝑥Te -based detectors strongly depends on the substrate material and its orientation. CZT substrates are among the most commonly used due to their very good lattice match with Hg₁-𝑥Cd𝑥Te absorber material with different Cd content. In the present work, the authors focused on optimizing the MBE growth parameters in order to obtain the best possible crystalline quality of Hg₁-𝑥Cd𝑥Te layers grown on CZT substrates with (211)B orientation, in particular in terms of minimizing the number of defects. Experimental results of the selected structures showed that the obtained undoped Hg₁-𝑥Cd𝑥Te layers of different x have high crystallographic and optical quality, as well as good surface morphology. In particular, high-resolution X-ray diffraction (HRXRD) measurements and their analysis showed that the best structure has a full width at half maximum of rocking curve (FWHM𝑅𝐶) as low as 21.5 arcsec, and that the intensity distribution of diffraction peaks does not indicate the influence of mosaicisity and dislocation density.

Słowa kluczowe

EN

HgCdTe; molecular beam epitaxy; infrared detectors

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2025
• Tom: Vol. 33, No. 1
• Strony: art. no. e153809
• Opis fizyczny: Bibliogr. 22 poz., rys., tab., wykr.

Twórcy

autor

Rogalska Iwona

• Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszów, al. Rejtana 16c, 35-959 Rzeszów, Poland
• Institute of Physics, International Research Centre MagTop, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

• https://orcid.org/0000-0002-8706-6971

autor

Ruszała Marta

• Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszów, al. Rejtana 16c, 35-959 Rzeszów, Poland

autor

Grendysa Jakub

• Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszów, al. Rejtana 16c, 35-959 Rzeszów, Poland
• Institute of Physics, International Research Centre MagTop, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

• https://orcid.org/0000-0001-8579-8485+

autor

Juś Anna

• Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszów, al. Rejtana 16c, 35-959 Rzeszów, Poland

• https://orcid.org/0000-0001-6584-8182

autor

Wojnarowska-Nowak Renata

• Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszów, al. Rejtana 16c, 35-959 Rzeszów, Poland

• https://orcid.org/0000-0003-2550-227X

autor

Marchewka Michał

• Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszów, al. Rejtana 16c, 35-959 Rzeszów, Poland

• https://orcid.org/0000-0002-5861-5476

autor

Wojtowicz Tomasz

• Institute of Physics, International Research Centre MagTop, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

• https://orcid.org/0000-0003-4498-4622

Bibliografia

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Uwagi

1. Opracowanie rekordu ze środków MNiSW, umowa nr POPUL/SP/0154/2024/02 w ramach programu "Społeczna odpowiedzialność nauki II" - moduł: Popularyzacja nauki (2025).

2. The authors thank Msc. Piotr Krzemiński from Centre for Microelectronics and Nanotechnology for SEM measurements. This researchwas partially supported by the Foundation for Polish Science project "MagTop" no. FENG.02.01-IP.05-0028/23 is cofinanced by the European Union from the funds of Priority 2 of the European Funds for a Smart Economy Program 2021–2027 (FENG).