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The performance of long-wave infrared (LWIR) x = 0.22 HgCdTe avalanche photodiodes (APDs) was presented. The dark currentvoltage characteristics at temperatures 200 K, 230 K, and 300 K were measured and numerically simulated. Theoretical modeling was performed by the numerical Apsys platform (Crosslight). The effects of the tunneling currents and impact ionization in HgCdTe APDs were calculated. Dark currents exhibit peculiar features which were observed experimentally. The proper agreement between the theoretical and experimental characteristics allowed the determination that the material parameters of the absorber were reached. The effect of the multiplication layer profile on the detector characteristics was observed but was found to be insignificant.
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Tom
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art. no. e149173
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Bibliogr. 32 poz., rys.
Twórcy
autor
- Institute of Applied Physics, Military University of Technology, ul. Kaliskiego 2, 00-908 Warsaw, Poland
autor
- Institute of Applied Physics, Military University of Technology, ul. Kaliskiego 2, 00-908 Warsaw, Poland
- Vigo Photonics S.A., ul. Poznańska 129/133, 05-850 Ożarów Mazowiecki, Poland
autor
- Vigo Photonics S.A., ul. Poznańska 129/133, 05-850 Ożarów Mazowiecki, Poland
autor
- Institute of Applied Physics, Military University of Technology, ul. Kaliskiego 2, 00-908 Warsaw, Poland
autor
- Institute of Applied Physics, Military University of Technology, ul. Kaliskiego 2, 00-908 Warsaw, Poland
Bibliografia
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Uwagi
Opracowanie rekordu ze środków MNiSW, umowa nr SONP/SP/546092/2022 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2024).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-56767e1d-17e7-4f6c-b137-f465da2ca685