Simulation and characterization of 4H-SiC JBS diodes irradiated by hydrogen and carbon ions

• Autorzy: Sharma R. K. , Hazdra P , Popelka S.
• Języki publikacji: EN

Abstrakty

EN

This paper presents the development and application of simulation models for proton and carbon irradiated 4H-SiC junction barrier Schottky (JBS) diodes. Commercial JBS diode chips were irradiated to the identical depth with different doses of hydrogen and carbon ions. The resulting defects were then identified by deep level transient spectroscopy (DLTS). Comprehensive I-V and C-V measurement performed prior to and after ion irradiation was used for calibration of simulation models. Results show that compared to protons, heavier carbon ions introduce more defects with deeper levels in the SiC bandgap and more stable damage. For the first time, the free carrier concentration profile extracted from CV simulations for irradiated JBS diode has been compared with experimental data. The simulation of irradiated JBS diodes exhibit excellent matching with experimental data and can be very useful for the optimization of SiC power devices. Furthermore, it is shown that the developed model can be used for prediction of the effect of ion irradiation on both the static and dynamic characteristic of PiN diode.

Słowa kluczowe

EN

4H-SiC; characterization; JBS diode; PIN diode; simulation

PL

4H-SiC; dioda JBS; dioda PIN; symulacje

• Wydawca: Lodz University of Technology. Department of Microelectronics and Computer Science
• Czasopismo: International Journal of Microelectronics and Computer Science
• Rocznik: 2015
• Tom: Vol. 6, nr 2
• Strony: 59--63
• Opis fizyczny: Bibliogr. 15 poz., 1 il. kolor., wykr.

Twórcy

autor

Sharma R. K.

• Department of Microelectronics, Faculty of Electrical Engineering, Czech Technical University in Prague, Prague 16627, Czech Republic

autor

Hazdra P

• Department of Microelectronics, Faculty of Electrical Engineering, Czech Technical University in Prague, Prague 16627, Czech Republic

autor

Popelka S.

• Department of Microelectronics, Faculty of Electrical Engineering, Czech Technical University in Prague, Prague 16627, Czech Republic

Bibliografia

• [1] M. Bhatnagar and B. J. Baliga, “Comparison of 6H-SiC, 3C-SiC, and Si for power devices”, IEEE Trans. Electron Devices, vol. 40, pp. 645-651, Mar. 1993.
• [2] L. Zhu, T. P. Chow, K. A. Jones, and A. Agarwal, “Design, fabrication and characterization of low forward drop, low leakage, 1-kV 4H-SiC JBS rectifiers”, IEEE Trans. Electron Devices, vol. 53, pp. 363–368, Feb. 2006.
• [3] B. A. Hull, J. J. Sumakeris, M. J. O’Loughlin, Q. Zhang, et.al., “Performance and stability of large-area 4H-SiC 10-kV junction barrier Schottky rectifiers”, IEEE Trans. Electron Devices, vol. 55, pp. 1864- 70, Aug. 2008.
• [4] S. Q.-Wen, Z. Y.-Ming, Z. Y.-Men, C. F.-Ping, et.al., “Investigation of current transport parameters of Ti/4H SiC JBS diode with inhomogeneous barrier”, Chinese Physics B, vol. 20, 057301 2011.
• [5] C. F. Ping, Z. Y. Ming, Z. Y. Men, T. X. Yan, W. Y. Hu, and C. W. Hao, “Temperature-dependent characteristics of 4H SiCjunction barrier Schottky diodes”, Chinese Physics B, vol. 21, 037304, 2012.
• [6] R. K. Sharma, S. Popelka, P. Hazdra, “The effect of light ion irradiation on 4H-SiC JBS power diode characteristics: Experiment and Simulation” IEEE Transactions on Nuclear Science, vol. 62, no.2, pp. 534-541, April 2015.
• [7] Information on http://www.cree.com
• [8] Information on http://www.srim.org.
• [9] ATLAS Users Manual 2013 (Santa Clara, CA: Silvaco International).
• [10] P. Hazdra, R. K. Sharma, and S. Popelka, “The Effect of proton and carbon irradiation on 4H-SiC 1700V MPS diode characteristics”, Materials Science Forum, vols 821-823, pp. 612-615, 2015.
• [11] J. P. Doyle, M. K. Linnarsson, P. Pellegrino, N. Keskitalo, et.al., “Electrically active point defects in n-type 4H-SiC”, J. Appl. Phys., vol. 84, pp. 1354-1357, 1998.
• [12] G. Alfieri, E. V. Monakhov, B. G. Svensson and A. Hallén, “Defect energy levels in hydrogen implanted and electron irradiated n type 4H silicon carbide”, J. Appl. Phys., vol. 98, 113524, 2005.
• [13] T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, et.al., “Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy”, phys. stat. sol. (a) 162, pp. 199-225, 1997.
• [14] G. Izzo, G. Litrico, L. Calcagno, G. Foti and F. La Via, “Electrical properties of high energy ion irradiated 4H-SiC Schottky diodes”, J. Appl. Phys. vol. 104, 093711, 2008.
• [15] L. C. Kimerling, “Influence of deep traps on the measurement of freecarrier distributions in semiconductors by junction capacitance techniques”, J. Appl. Phys. vol. 45, pp. 1839-45, April 1974.