Tytuł artykułu
Wybrane pełne teksty z tego czasopisma
Identyfikatory
Warianty tytułu
Języki publikacji
Abstrakty
The voltage and frequency dependence of dielectric constant є′, dielectric loss є″, electrical modulus M″, M′, loss tangent tanδ and AC electrical conductivity σAC of p-Si/ZnO/PMMA/Al, p-Si/ZnO/Al and p-Si/PMMA/Al structures have been investigated by means of experimental G-V and C-V measurements at 30 kHz, 100kHz, 500 kHz and 1 MHz in this work. While the values of є′, є″, tanδ and σAC decreased, the values of M′ and M″ increased for these structures when frequency was increased and those of p-Si/ZnO/Al and p-Si/PMMA/Al were comparable with those of p-Si/ZnO/PMMA/Al. The obtained results showed that the values of p-Si/ZnO/PMMA/Al structure were lower than the values of p-Si/ZnO/Al and p-Si/PMMA/Al.
Wydawca
Czasopismo
Rocznik
Tom
Strony
885--892
Opis fizyczny
Bibliogr. 31 poz., rys.
Twórcy
autor
- Balıkesir University, Faculty of Engineering Department of Electric and Electronic Engineering, 10145, Balıkesir, Turkey
autor
- Gazi University, Faculty of Science, Department of Physics, 06500 Ankara, Turkey
autor
- Gazi University, Graduate School of Natural and Applied Science, Department of Advanced Technology, 06500 Ankara, Turkey
autor
- Izmir Democracy University, Faculty of Engineering, Department of Biomedical Engineering, 35140 Izmir, Turkey
autor
- Gazi University, Graduate School of Natural and Applied Science, Department of Advanced Technology, 06500 Ankara, Turkey
Bibliografia
- [1] SHIN B.K., LEE T.I., XIONG J., HWANG C., NOH G., CHO J.H., MYOUNG J.M., Sol. Energ. Mat. Sol. C., 95 (2011), 2650.
- [2] OOTSUKA T., LIU Z., OSAMURA M., FUKUZAWA Y., KURODA R., SUZUKI Y., OTOGAWA N., MISE T., WANG S., HOSHINO Y., NAKAYAMA Y., TANOUE H., MAKITA Y., Thin Solid Films, 476 (2005), 30.
- [3] SZARKO J.M., SONG J.K., BLACKLEDGE C.W., SWART I., LEONE S.R., LI S., ZHAO Y., Chem. Phys. Lett., 404 (2005), 171.
- [4] ASMAR AL R., ATANAS J.P., AJAKA M., ZAATAR Y., FERBLANTIER G., SAUVAJOL J.L., JABBOUR J., JUILLAGET S., FOUCARAN A., J. Cryst. Growth, 279 (2005), 394.
- [5] BARNES T.M., LEAF J., HAND S., FRY C., WOLDEN C.A., J. Cryst. Growth, 274 (2004), 412.
- [6] CHEN S., ZHANG J., FENG X., WANG X., LUO L., SHI Y., XUE Q., WANG C., ZHU J., ZHU Z., Appl. Surf. Sci., 241 (2005), 384.
- [7] AYOUCHI R., LEINEN D., MARTIN F., GABAS M., DALCHIELE E., RAMOS-BARRADO J.R., Thin Solid Films, 426 (2003), 68.
- [8] CHAABOUNI F., ABAAB M., REZIG B., Superlattice. Microst., 39 (2006), 171.
- [9] SELIM OCAK Y., J. Alloy. Compd., 513 (2012), 130.
- [10] KOIDE Y., Appl. Surf. Sci., 254 (2008), 6268.
- [11] CAPUTO D., CESARE DE D., NASCETT A., TUCCI M., Sensor. Actuat. A-Phys., 153 (2009), 1.
- [12] GRAMSCH E., PCHELYAKOV O.P., CHISTOKHIN I. B., THISHKOVSKY G., IEE T. Electron. Dev., 54 (2007), 2638.
- [13] JIN Y., WANG J., SUN B., BLAKESLEY J.C., GREENHAM N.C., Nano Lett., 8 (2008), 1649.
- [14] ZHAI T., FANG X., LIAO M., XU X., LIANG LI., LIU B., KOIDE Y., MA Y., YAO J., BANDO Y., GOLBERG D., ACS Nano., 4 (2010), 1596.
- [15] LEUNG Y.H., HE Z.B., LUO L.B., TSANG C.H.A., WONG N.B., ZHANG W.J., LEE S.T., Appl. Phys. Lett., 96 (2010), 053102.
- [16] HE J.H., HSU J.H., WANG C.W., LIN H.N., CHEN L.J., WANG Z.L., J. Phys. Chem. B., 110 (2006), 50.
- [17] SUN X.W., HUANG J.Z., WANG J. X., XU Z., Nano Lett., 8 (4) (2008), 1219.
- [18] BILGE OCAK S., SELÇUK A.B., ARAS G., ORHAN E., Mat. Sci. Semicon. Proc., 38 (2015), 249.
- [19] SELÇUK A.B., BILGE OCAK S., ARAS F.G., OZ ORHAN E., J. Electron. Mater., 43 (2014), 3263.
- [20] SCHULZ M., KLAUSMANN E., J. Appl. Phys., 18 (1979), 169.
- [21] KONOFAOS N., MC CLEAN I.R., THOMAS C.B., Phys. Status Solidi A., 161 (1997), 111.
- [22] BILGE OCAK S., SELÇUK A.B., ARAS G., ORHAN E., Mat. Sci. Semicon. Proc., 38 (2015), 249.
- [23] AFANDIYEVA I.M., ASKEROV SH.G., ABDULLAYEVA L.K., ASLANOW SH.S., Solıd State Electron., 51 (2007), 1096.
- [24] FARUK YÜKSEL Ö., SELCUK A.B., OCAK S.B., Vacuum, 82 (2008), 1183.
- [25] SYMTH C.P., Dielectric Behaviour and Structure, McGraw-Hill, New York, 1995.
- [26] POPESCU M., BUNGET I., Physics of Solid Dielectrics, Elsevier, Amsterdam, 1984.
- [27] KWA K.S., CHATTOPADHYAY S., JANCOVIC N.D., OLSEN S.H., DRISCOLL L.S., O’NIELL A.G., Semicond. Sci. Tech., 18 (2003), 82.
- [28] FAIVRE A., NIQUET G., MAGLIONE M., FORNAZERO J., LAI J.F., DAVID L., Eur. Phys. J. B, 10 (1999), 277.
- [29] PISSIS P., KIRITSIS A., Solid State Ionics, 97 (1997), 105.
- [30] MIGAHED M.D., ISHRA M., FAHMY T., BARAKAT A., J. Phys. Chem. Solids, 65 (2004), 1121.
- [31] CHATTOPHADHYAY A., RAYCHAUDHURI B., Solid State Electron., 35 (1992), 875.
Uwagi
PL
Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2018).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-52cadb8f-313e-4b05-b5ac-f279dc2f9c25