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Warianty tytułu
Metoda quasi dwupoziomowa jako uniwersalne podejście do balansowania napięcia szeregowo połączonych tranzystorów SiC MOSFET
Języki publikacji
Abstrakty
This study showcases the quasi-two-level (Q2L) control method for voltage balancing of series-connected SiC MOSFETs. Medium and high voltage applications require stacking of power semiconductor devices in cells or series-connection in order to reach appropriate blocking capabilities. The simplified quasi-two-level method, only to ensure balancing among the series-connected transistors can be deemed as a universal method for voltage balancing of stacked power devices or cells. A generalized control strategy and a more specific application for a medium voltage dc-dc converter are presented, with both validated using experimental models at up to 1.5 kV dc voltage.
Niniejsze studium przedstawia metodę sterowania quasi-dwupoziomowego (Q2L) w celu balansowania napięcia na szeregowo połączonych tranzystorach SiC MOSFET. Zastosowania średniego i wysokiego napięcia wymagają łączenia szeregowego półprzewodnikowych przyrządów mocy w celach, bądź bezpośrednio. Metoda quasi-dwupoziomowa, uproszczona tylko w celu zapewnienia zrównoważenia napięcia, może stanowić uniwersalną metodę balansowania napięć między szeregowo połączonymi tranzystorami. Na bazie eksperymentów, przedstawiona została uniwersalna metoda sterowania, a także konkretne zastosowanie w przekształtniku dc-dc średniego napięcia.
Wydawca
Czasopismo
Rocznik
Tom
Strony
14--18
Opis fizyczny
Bibliogr. 25 poz., rys., tab.
Twórcy
autor
- Warsaw University of Technology, Institute of Control and Industrial Electronics, Koszykowa 75, 00 662 Warsaw
Bibliografia
- [1] X. She, A. Q. Huang, L. Ó, and B. Ozpineci, “Review of Silicon Carbide Power Devices and Their Applications,” IEEE Transactions on Industrial Electronics, vol. 64, no. 10, pp. 8193-8205, 2017.
- [2] G. Iannaccone, C. Sbrana, I. Morelli, and S. Strangio, “Power Electronics Based on Wide-Bandgap Semiconductors: Opportunities and Challenges,” IEEE Access, vol. 9, pp. 139446-139456, 2021.
- [3] L. Zhang, X. Yuan, X. Wu, C. Shi, J. Zhang, and Y. Zhang, “Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules,” IEEE Transactions on Power Electronics, vol. 34, no. 2, pp. 1181-1196, 2019.
- [4] D. Zięba, J. Rąbkowski, „Dynamic performance evaluation of ultra-fast SiC MOSFET power module – a comprehensive approach“, vol. 5, Przegląd Elektrotechniczny, 2023.
- [5] A. Marzoughi, J. Wang, R. Burgos, and D. Boroyevich, “Characterization and Evaluation of the State-of-the-Art 3.3-kV 400-A SiC MOSFETs,” IEEE Transactions on Industrial Electronics, vol. 64, no. 10, pp. 8247-8257, 2017.
- [6] L. Wang, Q. Zhu, W. Yu, and A. Q. Huang, “A Medium-Voltage Medium-Frequency Isolated DC–DC Converter Based on 15- kV SiC MOSFETs,” IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 5, no. 1, pp. 100-109, 2017.
- [7] D. Rothmund, T. Guillod, D. Bortis and J. W. Kolar, "99.1% Efficient 10 kV SiC-Based Medium-Voltage ZVS Bidirectional Single-Phase PFC AC/DC Stage," in IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 7, no. 2, pp. 779-797, June 2019.
- [8] P. Trochimiuk, R. Kopacz, K. Frąc and J. Rąbkowski, "Medium Voltage Power Switch in Silicon Carbide—A Comparative Study," in IEEE Access, vol. 10, pp. 26849-26858, 2022.
- [9] S. Zhao, X. Zhao, Y. Wei, Y. Zhao, and H. A. Mantooth, “A Review of Switching Slew Rate Control for Silicon Carbide Devices Using Active Gate Drivers,” IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 9, no. 4, pp. 4096-4114, 2021.
- [10] R. Kopacz, D. Peftitsis and J. Rabkowski, "Experimental study on fast-switching series-connected SiC MOSFETs," 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe), Warsaw, Poland, 2017, pp. P.1-P.10.
- [11] P. Trochimiuk, R. Kopacz, G. Wrona and J. Rąbkowski, "Medium voltage power switch based on 1.7 kV SiC MOSFETs connected in series inside power modules," 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe), Genova, Italy, 2019, pp. P.1-P.10.
- [12] P. Trochimiuk, R. Kopacz, G. Wrona, and J. Rąbkowski, “Active Voltage Balancing of Series-Connected 1.7 kV/325 A SiC MOSFETs Enabling Continuous Operation at Medium Voltage,” IEEE Access, vol. 9, pp. 8604-8614, 2021.
- [13] A. Marzoughi, R. Burgos, and D. Boroyevich, “Active Gate-Driver With dv/dt Controller for Dynamic Voltage Balancing in Series-Connected SiC MOSFETs,” IEEE Transactions on Industrial Electronics, vol. 66, no. 4, pp. 2488-2498, 2019.
- [14]X. Lin, L. Ravi, R. Burgos, and D. Dong, “Hybrid Voltage Balancing Approach for Series-Connected SiC MOSFETs for DC-AC Medium-Voltage Power Conversion Applications,” IEEE Transactions on Power Electronics, pp. 1-1, 2022.
- [15] A. Nabae, I. Takahashi, and H. Akagi, “A new neutral-point-clamped PWM inverter,” IEEE Trans. Ind. Applicat., vol. IA-17, no. 5, pp. 518-523, Sep./Oct. 1981
- [16] T. A. Meynard and H. Foch, "Multi-level conversion: high voltage choppers and voltage-source inverters," PESC '92 Record. 23rd Annual IEEE Power Electronics Specialists Conference, Toledo, Spain, 1992, pp. 397-403 vol.1, doi: 10.1109/PESC.1992.254717.
- [17]R. Kopacz, M. Harasimczuk, R. Sobieski, and J. Rąbkowski, "Three-Level Interleaved Non-isolated DC/DC Converter as a Battery Interface in an EV Charging System with Bipolar DC-Link," vol. 5, Przegląd Elektrotechniczny, 2023.
- [18] S. Debnath, J. Qin, B. Bahrani, M. Saeedifard and P. Barbosa, "Operation, Control, and Applications of the Modular Multilevel Converter: A Review," in IEEE Transactions on Power Electronics, vol. 30, no. 1, pp. 37-53, Jan. 2015.
- [19] I.A, Gowaid, et al., „Analysis and design of a modular multilevel converter with trapezoidal modulation for medium and high voltage DC-DC transformers“, IEEE Transactions on Power Electronics 30(10), 5439–5457, 2015.
- [20] M. Schweizer and T. B. Soeiro, "Heatsink-less Quasi 3-level flying capacitor inverter based on low voltage SMD MOSFETs," 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe), Warsaw, Poland, 2017, pp. P1-P.10 Heatsink-less Quasi 3-level flying capacitor inverter based on low voltage SMD MOSFETs." pp. P1-P.10.
- [21] R. Kopacz, P. Trochimiuk, G. Wrona and J. Rąbkowski, "High-Frequency SiC-Based Medium Voltage Quasi-2-Level Flying Capacitor DC/DC Converter With Zero Voltage Switching," 2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe), Lyon, France, 2020, pp. P.1-P.10
- [22] R. Kopacz, M. Harasimczuk, P. Trochimiuk, G. Wrona and J. Rąbkowski, "Medium Voltage Flying Capacitor DC–DC Converter With High-Frequency TCM-Q2L Control," in IEEE Transactions on Power Electronics, vol. 37, no. 4, pp. 4233- 4248, April 2022.
- [23] S. Milovanovic, D. Dujic, „Comprehensive analysis and design of a quasi two-level converter leg“, CPSS Transactions on Power Electronics and Applications 4(3), 181–196, 2019.
- [24] S.C. Mersche, R. Schwendemann, M. Hiller, „Validation of the quasi-two-level operation for a flying capacitor converter in medium-voltage applications“, Energies 16(6), 2797, 2023.
- [25] R. Kopacz, M. Harasimczuk, P. Trochimiuk and J. Rąbkowski, "Investigation of Soft-Switching QSW Technique in DC/DC SiC-Based Flying Capacitor Converter With Q2L Control," in IEEE Transactions on Industrial Electronics, vol. 70, no. 9, pp. 9035- 9045, Sept. 2023.
Uwagi
Opracowanie rekordu ze środków MNiSW, umowa nr POPUL/SP/0154/2024/02 w ramach programu "Społeczna odpowiedzialność nauki II" - moduł: Popularyzacja nauki i promocja sportu (2025).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-5223e6ee-fab2-48c4-9148-720cf8c9753d
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