Effect of evaporation rate and substrate temperature on optical, structural, and electrical properties of ZnTe:Sb films deposited by thermal evaporation of Zn, Te, and Sb sources

• Autorzy: Aqili Akram , Al-Reyahi Anas Y. , Maghrabi Mufeed

Identyfikatory

DOI

10.2478/msp-2025-0020

• Języki publikacji: EN

Abstrakty

EN

Antimony (Sb)-doped ZnTe films were deposited onto amorphous glass substrates via thermal evaporation of elemental sources. This study aims to investigate the effects of the Sb evaporation rate and glass substrate temperature on the various physical properties of the prepared films. Structural analysis was conducted using X-ray diffraction, and the elemental composition was determined using energy dispersive X-ray spectroscopy attached to a scanning electron microscope. Optical transmittance spectra, recorded across the 400–2,000 nm wavelength range, were used to assess the film thickness, surface roughness, refractive index, and optical bandgap. DC conductivity measurements were performed under vacuum within a temperature range of 30–170°C. The results showed a significant increase in the conductivity of the films (by several orders of magnitude), accompanied by a clear change in the optical properties as a result of increasing Sb content in the films. Additionally, the substrate temperature was found to have a substantial effect on the physical characteristics of the films.

Słowa kluczowe

EN

ZnTe films; antimony; thermal evaporation; optical properties; energy gap; DC conductivity; activation energy

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2025
• Tom: Vol. 43, No. 2
• Strony: 78--86
• Opis fizyczny: Bibliogr. 28 poz., rys., tab.

Twórcy

autor

Aqili Akram

• Department of Physics, Faculty of Science, The Hashemite UniversityZarqa 13133, Jordan

autor

Al-Reyahi Anas Y.

• Department of Physics, Faculty of Science, The Hashemite UniversityZarqa 13133, Jordan

autor

Maghrabi Mufeed

• Department of Physics, Faculty of Science, The Hashemite UniversityZarqa 13133, Jordan

Bibliografia

• [1] Singh, H., Singh, P., Thakur, A., Singh, T., Sharma, J., Nanocrystalline ZnxTe100−x (x = 0, 5, 20, 30, 40, 50) thin films: Structural, optical and electrical properties, Mater. Sci. Semicond. Process., 2018, 75: 276–282. doi:10.1016/j.mssp.2017.12.002
• [2] Shaaban, E.R., Kansal, I., Mohamed, S.H., Ferreira, J.M.F., Microstructural parameters and optical constants of ZnTe thin films with various thicknesses, Phys. B Condens. Matter, 2009, 404: 3571–3576. doi:10.1016/J.PHYSB.2009.06.002
• [3] Ur Rehman, K.M., Liu, X., Riaz, M., Yang, Y., Feng, S., Khan, M.W., et al., Fabrication and characterization of Zinc Telluride (ZnTe) thin films grown on glass substrates, Phys. B Condens. Matter, 2019, 560: 204–207. doi:10.1016/j.physb.2019.02.043
• [4] Abbas Shah, N., Silver doping effects on ZnTe thin films by thermal evaporation technique, J. Mater. Sci. Eng., 2017, 6: 388. doi:10.4172/2169-0022.1000388
• [5] Li, H., Huang, H., Lina, A., Tang, K., Chen, Z., Zhang, Z., et al., Influence of substrate temperature on the properties of ZnTe:Cu films prepared by a magnetron co-sputtering method, Heliyon, 2024, 10: e23349. doi:10.1016/j.heliyon.2023.e23349
• [6] Abbas, M., Shah, N.A., Jehangir, K., Fareed, M., Zaidi, A., Physical properties of ZnTe semiconductor thin films prepared by high vacuum resistive system, Mater Sci- Pol, 2018, 36: 364–369. doi:10.1515/msp-2018-0036
• [7] Ochoa-Estrella, F.J., Vera-Marquina, A., Mejia, I., Leal-Cruz, A.L., Quevedo-López, M., Pressure influence on structural and optical behaviors of ZnTe thin films grown by PLD, J. Mater. Sci. Mater. Electron., 2018, 29: 7629–7636. doi:10.1007/S10854-018-8755-3/METRICS
• [8] Kumar, V., Kumar, V., Dwivedi, D.K., Growth and characterization of zinc telluride thin films for photovoltaic applications, Phys. Scr., 2012, 86: 015604. doi:10.1088/0031-8949/86/01/015604
• [9] Mahmood, W., Awan, S.U., Din, A.U., Ali, J., Nasir, M.F., Ali, N., et al., Pronounced impact of p-type carriers and reduction of bandgap in semiconducting ZnTe thin films by Cu doping for intermediate buffer layer in heterojunction solar cells, Materials, 2019, 12: 1359. doi:10.3390/MA12081359
• [10] Islam, A.B.M.O., Chaure, N.B., Wellings, J., Tolan, G., Dharmadasa, I.M., Development of electrodeposited ZnTe layers as window materials in ZnTe/CdTe/CdHgTe multi-layer solar cells, Mater. Charact., 2009, 60: 160–163. doi:10.1016/J.MATCHAR.2008.07.009
• [11] Murali, K.R., Ziaudeen, M., Jayaprakash, N., Structural and electrical properties of brush plated ZnTe films, Solid. State Electron., 2006, 50: 1692–1695. doi:10.1016/J.SSE.2006.09.003
• [12] Hassan, A.M., Diab, F., Kotp, E.F., Al-Kashef, G., Shaaban, E.R., Metawa, A.E., Implantation of Cu onto ZnTe thin film using plasma focus device for optoelectronic applications, Opt. Mater. (Amst.), 2021, 117, 111182. doi:10.1016/J.OPTMAT.2021.111182
• [13] Singh, H., Singh, M., Singh, J., Bansod, B.S., Singh, T., Thakur, A., et al., Composition dependence study of thermally evaporated nanocrystalline ZnTe thin films. J. Mater. Sci. Mater. Electron., 2019, 30: 3504–3510. doi:10.1007/S10854-018-00627-9/METRICS
• [14] Bhahada, K.C., Tripathi, B., Acharya, N.K., Kulriya, P.K., Vijay, Y.K., Formation of ZnTe by stacked elemental layer method, Appl. Surf. Sci., 2008, 255: 2143–2148. doi:10.1016/J.APSUSC.2008.07.068
• [15] Younus, I.A., Ezzat, A.M., Uonis, M.M., Preparation of ZnTe thin films using chemical bath deposition technique, Nanocomposites, 2020, 6: 165–172. doi:10.1080/20550324.2020.1865712
• [16] Aqili, A.K.S., Saleh, A.J., Ali, Z., Al-Omari, S., Ag doped ZnTe films prepared by closed space sublimation and an ion exchange process, J. Alloys Compd., 2012, 520: 83. doi:10.1016/j.jallcom.2011.12.094
• [17] Aqili, A.K.S., Ali, Z., Maqsood, A., Characterization of zinc telluride thin films deposited by two-source technique and post-annealed in nitrogen ambient, J. Cryst. Growth, 2011, 317: 47–51. doi:10.1016/j.jcrysgro.2010.12.072
• [18] Ochoa-Estrella, F.J., Vera-Marquina, A., Mejia, I., Leal-Cruz, A.L., Pintor-Monroy, M.I., Quevedo-López, M., Structural, optical, and electrical properties of ZnTe:Cu thin films by PLD, J. Mater. Sci. Mater. Electron., 2018, 29: 20623–20628. doi:10.1007/S10854-018-0200-0/METRICS
• [19] Romeo, N., Sberveglieri, G., Tarricone, L., Vidal, J., Wojtowicz, A., Electrical properties of Sb-doped ZnTe thin films, Phys. Status Solidi (a), 1978, 47: 371–374. doi:10.1002/PSSA.2210470205
• [20] Lee, K.S., Oh, G., Kim, E.K., Growth of p-type ZnTe thin films by using nitrogen doping during pulsed laser deposition, J. Korean Phys. Soc., 2015, 67: 672–675. doi:10.3938/JKPS.67.672/METRICS
• [21] Oklobia, O., Kartopu, G., Irvine, S.J.C., Properties of arsenic–doped ZnTe thin films as a back contact for CdTe solar cells, Materials, 2019, 12: 3706. doi:10.3390/MA12223706
• [22] Barati, A., Klein, A., Jaegermann, W., Deposition and characterization of highly p-type antimony doped ZnTe thin films, Thin Solid. Films, 2009, 517: 2149–2152. doi:10.1016/J.TSF.2008.10.078
• [23] Amutha, R., Subbarayan, A., Sathyamoorthy, R., Influence of substrate temperature on microcrystalline structure and optical properties of ZnTe thin films, Cryst. Res. Technol., 2006, 41: 1174–1179. doi:10.1002/CRAT.200610744
• [24] Mahmood, W., Thomas, A., Haq, A.U., Shah, N.A., Nasir, M.F., Reduced electrical performance of Zn enriched Zn Ten anoinclusion semiconductors thin films for buffer layer in solar cells, J. Phys. D. Appl. Phys., 2017, 50: 255503. doi:10.1088/1361-6463/AA7157
• [25] Webb, J.B., Brodie, D.E., Conduction mechanisms in a-ZnTe, Can. J. Phys., 2011, 52, 2240–2245. doi:10.1139/P74-294
• [26] Aqili, A.K., Abu-Omar, T., Al-Reyahi, A.Y., Shaheen, A., Al-Omari, S., Alhagish, I., Effect of phosphoric acid treatment on the physical properties of zinc telluride thin films, Chalcogenide Lett., 2023, 20: 113–120. doi:10.15251/CL.2023.202.113
• [27] Walton, A.K., Moss, T.S., Determination of refractive index and correction to effective electron mass in PbTe and PbSe, Proc. Phys. Soc., 1963, 81: 509. doi:10.1088/0370-1328/81/3/319
• [28] Ahmed, M., Alshahrie, A., Shaaban, E.R., Resulting effect of the p-Type of ZnTe: Cu thin films of the intermediate layer in heterojunction solar cells: Structural, optical, and electrical characteristics, Materials, 2023, 16: 3082. doi:10.3390/MA16083082