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Synthesis and characterization of high-efficiency low-cost solar cell thin film

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Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
Polycrystalline chalcogenide semiconductors play a vital role in solar cell applications due to their outstanding electrical and optical properties. Among the chalcogenide semi-conductors, CdZnS is one kind of such important material for applications in various modern solid state devices such as solar cells, light emitting diode, detector etc. Due to their applications in numerous electro-optic devices, group II-VI semiconductors have been studied extensively. In recent years, major attention has been given to the study of electrical and optical properties of CdZnS thin films. In this work, Cd1−xZnxS thin films were prepared by chemical bath deposition technique. Phase purity and surface morphology properties were analyzed using field emission scanning electron microscope (FE-SEM) and X-ray diffraction (XRD) studies. Chemical composition was studied using energy dispersive spectrophotometry (EDS). Optical band gap property was investigated using UV-Spectroscopy. Electrical conductivity studies were performed by two probe method and thermoelectric power setup (TEP) to determine the type of the material. This work reports the effect of Zn on structural, electrical, microstructural and optical properties of these films.
Słowa kluczowe
Wydawca
Rocznik
Strony
127--135
Opis fizyczny
Bibliogr. 20 poz., rys., tab.
Twórcy
  • Department of Physics, EGS Pillay Engineering College (Autonomous), Nagapattinam, Tamil Nadu, India
  • Research Department of Physics American College, Madurai, Tamil Nadu, India
  • Research Department of Physics American College, Madurai, Tamil Nadu, India
  • Research Department of Physics American College, Madurai, Tamil Nadu, India
Bibliografia
  • [1] TYAN Y.S., Sol. Cell., 23 (1988), 59.
  • [2] SHASHIBHUSHA N., CHANDR T.A., Turk. J. Phys., 32 (2008), 21.
  • [3] PISARKIEWICZ T., Opto-Electron. Rev., 12 (2004), 33.
  • [4] CELALATTINBAYBUL M., NILGUNORTHA N., Thin Solid Films, 518 (2010) 1925.
  • [5] NAGAMANI K., REDDY M.V., LINGAPPA Y., RAMAKRISHNA K.T., REDDY R., MILES W., Int. J. OptoElectron. Eng., 2(2012), 1.
  • [6] CLEMMINCK I., BURGELMAN M., CASTELEYN M., DEPUYDT B., Int. J. Solar Energ., 12 (1992), 67.
  • [7] SINGH S., SHRIVASTAVA A.K., Int. J. Innov. Res. Sci. Eng. T., 3 (2014), 1.
  • [8] SANAP V.B., PAWAR B.H., J. Opto-Electron. Biomed. Mat., 2 (2011), 39.
  • [9] SHARMA T.P., PATIDAR D., SAXENA M.S., SHARMA K., Indian J. Pure Appl. Phys., 44 (2006), 125.
  • [10] SELMA M.H., JAWAD A., Eng. Tech. J., 31 (2013), 1.
  • [11] MAHDI M.A., J. Basrah Res., 35 (2009), 1.
  • [12] LI W., YANG J., SUN Z., FENG L.-H., ZHANG J.-Q., WU L., Int. J. Photoenerg., 214 (2011), 5.
  • [13] KAWAR S.S., HURDE K.K., PACHKAWADE A.P., PAWAR B.H., Int. J. Basic Appl. Res., 5 (2012), 157.
  • [14] SHARMA T.P., PATIDAR D., SAXENA M.S., SHARMA K., Indian J. Pure Appl. Phys., 44 (2006), 125.
  • [15] BORASE S.V., CHAVAN S.D., SHARMA R., J. Alloy. Compd., 436 (2007), 501.
  • [16] RAVANGAVE L.S., BIRADAR U.V., MISAL S.D., Glob. Res. Anal., 2 (2013), 1.
  • [17] MOSIORI C.O., NJOROGE W., NANDOKUMU J., Dir. Res. J. Chem. Mat. Sci., 2 (2014), 13.
  • [18] PATIL R.H., PATIL S.N., NIKAM S.V., LADGAONKAR B.P., Int. J. Adv. Eng. Technol., 6 (2013), 688.
  • [19] UBALE A.U., CHIPADE K.S., BHUTE M.V., RAUT P.P., MALPE G.P., SAKHARE Y.S., BELKHEDKAR M.R., Int. J. Mater. Chem., 2 (2012), 165.
  • [20] SANDHYAPILLA I., BHUSHANB S., Proc. Nano Thailand, 2012.
Uwagi
PL
Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2019).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-51f6db52-8a69-4650-b39c-99a136f5a91d
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