Quantification of microstructural homogeneity in indium arsenide epilayers by X-ray diffraction

Odrzywolski, Sebastian; Kojdecki, Marek Andrzej; Złotnik, Sebastian; Kubiszyn, Łukasz; Wróbel, Jarosław

doi:10.24425/mms.2024.149700

Artykuł - szczegóły

Tytuł artykułu

Quantification of microstructural homogeneity in indium arsenide epilayers by X-ray diffraction

Autorzy

Odrzywolski Sebastian , Kojdecki Marek Andrzej , Złotnik Sebastian , Kubiszyn Łukasz , Wróbel Jarosław

Treść / Zawartość

Pełne teksty:

Odrzywolski_Quantification_MMS_2_2024.pdf

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Identyfikatory

DOI

10.24425/mms.2024.149700

Języki publikacji

Abstrakty

In this article a complete procedure to investigate thin semiconductor plates (epitaxial layers), including high-resolution X-ray diffraction measurements, mathematical modelling of both crystalline structure and crystalline microstructure and computations to approximate solving inverse problems, is proposed and described in detail. The method is successfully applied to estimate crystalline homogeneity of a square indium-arsenide plate epitaxially-grown on gallium-arsenide substrate. To this end, the specimen is tested in nine areas around points forming a square grid. It is demonstrated that whole specimen may be regarded as a single large crystalline grain consisting of crystallites separated by small-angle boundaries. The crystallites occur as rode-like cuboids elongated in the direction perpendicular to the plate surface, with different areas of the sample and with base sizes not much differing. The mean-absolute second-order strain is very small and almost constant in the whole sample. The first-order strain also appears and, effectively, the structure of the crystalline layer is tetragonal with unit-cell parameters being smaller parallelly and larger perpendicularly to the layer surface and varying slightly in the layer. The results are presented in tables and figures and commented.

Słowa kluczowe

X-ray diffraction crystalline structure crystalline microstructure epitaxy indium arsenide crystallite size first-order strain second-order strain

Wydawca

Komitet Metrologii i Aparatury Naukowej PAN

Czasopismo

Metrology and Measurement Systems

Rocznik

2024

Tom

Vol. 31, nr 2

Strony

231--257

Opis fizyczny

Bibliogr. 58 poz., tab., wykr., wzory

Twórcy

autor

Odrzywolski Sebastian

Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Street, 00-908 Warsaw, Poland

autor

Kojdecki Marek Andrzej

marek.kojdecki@wat.edu.pl

Institute of Mathematics and Cryptology, Military University of Technology, 2 Kaliskiego Street, 00-908 Warsaw, Poland

autor

Złotnik Sebastian

Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Street, 00-908 Warsaw, Poland

https://orcid.org/0000-0003-3891-5209

autor

Kubiszyn Łukasz

VIGO Photonics S.A., 129/133 Poznańska St., 05-850 Ożarów Mazowiecki, Poland

https://orcid.org/0000-0001-6820-2272

autor

Wróbel Jarosław

Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Street, 00-908 Warsaw, Poland

https://orcid.org/0000-0002-6385-3399

Bibliografia

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Uwagi

This work has been completed with financial support under the program of the Polish Ministry of Education and Science: “Regional Initiative of Excellence” in 2019-2023, project No. 014/RID/2018/19 with the funding amount of 4 589 200 PLN.

Identyfikator YADDA

bwmeta1.element.baztech-51e2abec-5dc6-4c8e-88ac-189cd3b993a4