Fabrication and Optoelectronic properties of Fluoride tin oxides/porous silicon/p-Silicon heterojunction

• Autorzy: Hadi H. A.
• Języki publikacji: EN

Abstrakty

EN

In this paper, formation of a nanostructure semi transparence fluoride tin oxides (FTO) by spray pyrolysis technique on porous silicon PS layer. Porous silicon PS layer was prepared by anodization of p-type silicon wafers to fabricate of the UV- Visible Fluoride-doped tin oxide /Porous silicon /p-Si heterojunction photodetector. Optical properties of FTO thin films were measured. The optical band gap of 3.77 eV for SnO₂ : F for film was deduced. From (I-V) and (C-V) measurements, the barrier Ø_B height for FTO/PS diode was of 0.77, and the built in voltage V_bi, which was of 0.95 V. External quantum efficiency was 55 % at 500 nm which corresponding to peak responsivity of 1.15 A/W at 1 V bias. The PS band gap in the vicinity of PS/c-Si heterojunction was 1.38 eV.

Słowa kluczowe

EN

porous silicon; electrochemical etching; spray pyrolysis; fluoride-doped tin oxide film; nanostructures; SEM; AFM; photodetector

• Wydawca: Przedsiębiorstwo Wydawnictw Naukowych "DARWIN"
• Czasopismo: International Letters of Chemistry, Physics and Astronomy
• Rocznik: 2014
• Tom: Vol. 17, iss. 2
• Strony: 142--152
• Opis fizyczny: Bibliogr. 24 poz., rys., wykr., wz.

Twórcy

autor

Hadi H. A.

• Department of Physics, College of Education, University of Al-Mustansiriyah, Baghdad, Iraq

Bibliografia

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