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Computer implementation of mass transport in Matlab environment for modeling Epitaxial growth process with moving boundary problem

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Treść / Zawartość
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Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
Due to the possibility of producing high quality and low cost silicon substrates the Epitaxial Lateral Overgrowth technology may find its application in the photovoltaic industry. However, a lateral growth process depends on many technological parameters such as the temperature of the system, the cooling rate, the solvent or the geometry of the mask. For this reason finding optimized settings for these factors in experimental research is difficult and time consuming. Numerical analysis of the growth process leads to better understanding of the fundamentals of the growth process. For this reason a computational model of epitaxial growth was proposed. This paper focuses on the accuracy of the numerical solution of the mass transport process during epitaxial growth. The method was implemented in the Matlab environment for the moving boundary application. The results of the calculations are presented.
Rocznik
Strony
15--23
Opis fizyczny
Bibliogr. 10 poz., rys., tab.
Twórcy
autor
  • Faculty of Environmental Engineering, Lublin University of Technology, Nadbystrzycka 38, 20-618 Lublin, Poland
Bibliografia
  • [1] Zytkiewicz Z R 2005 Cryst. Res. Technol. 40 (4/5) 321
  • [2] Zytkiewicz Z R 2002 Thin Solid Films 412 64
  • [3] Nishinaga T 2002 Journal of Crystal Growth 237–239 1410
  • [4] Jozwik I and Olchowik J M 2006 Journal of Crystal Growth 294 367
  • [5] Liu Y C, Zytkiewicz Z R and Dost S 2005 Journal of Crystal Growth 275, e953
  • [6] Yan Z, Naritsuka S and Nishinaga T 2000 Journal of Crystal Growth 209 1
  • [7] Kimura M et al. 1996 Journal of Crystal Growth 167 516
  • [8] Gulkowski S and Olchowik J M 2013 Annual Set The Environment Protection 15 436
  • [9] Gulkowski S, Olchowik J M, Cieslak K and Moskvin P P 2012 Materials Science – Poland 30 (4) 414
  • [10] Gulkowski S, Olchowik J M and Cieslak K 2013 Environmental Engineering IV Pawłowski, Dudzińska & Pawłowski (eds), Taylor & Francis Group, London 457
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-50aabe8a-37f9-4934-8d66-c5a4ca3b97ad
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