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The subject of the paper is lead free bismuth layer structure oxides (1-x)Bi3TiNbO9-xBaBi2N2O9(x=0; 1; 2; 3 mol). The influence of Bi3TiNbO9/BaBi2Nb2O9 ratio on dielectric and structural properties was studied in a wide range of temperatures. Change in the ratio causes a decrease in the maximum value of dielectric permittivity and shifts the temperature of ε`max to low values, leading to linear decreasing of average grain size and linear increasing of ceramics density. These results indicate an augment of the packing degree and the participation of pores are significantly decreased with the increase of BaBi2Nb2O9compound intake. Moreover, for 0.7Bi3TiNbO9-0.3BaBi2Nb2O9 ceramics the dielectric phase transition is broadened and the properties characteristic for the ferroelectric relaxor appear.
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Tom
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1503--1510
Opis fizyczny
Bibliogr. 19 poz., rys., tab., wykr., wzory
Twórcy
autor
- Institute of Technology and Mechatronics, University of Silesia, 12 Żytnia St. 41-200 Sosnowiec, Poland
autor
- Institute of Materials Science, University Of Silesia. 12 Bankowa St., 40-007 Katowice, Poland
autor
- Institut fur Geowssenschaften der Universität, Johannes Gutenberg-Universität, 55099 Mainz. Germany
autor
- Institute of Physics, University of Silesia. 4 Uniwersytecka St., 40-700 Katowice Poland
autor
- Institute of Technology and Mechatronics, University of Silesia, 12 Żytnia St. 41-200 Sosnowiec, Poland
autor
- Institute of Materials Science, University Of Silesia. 12 Bankowa St., 40-007 Katowice, Poland
autor
- Institute of Technology and Mechatronics, University of Silesia, 12 Żytnia St. 41-200 Sosnowiec, Poland
autor
- Institute of Technology and Mechatronics, University of Silesia, 12 Żytnia St. 41-200 Sosnowiec, Poland
Bibliografia
- [1] T. Tadashi, Ceramics Japan 40, 586-597 (2005).
- [2] R. Zachariasz, D. Bochenek, Arch. Metali. Mater. 54, 895-903 (2009).
- [3] D. Bochenek, Ferroelectrics 417, 41-45 (2011).
- [4] M. Nanao, M. Hirose, T. Tsukada, Jpn. J. Appl. Phys. 40, 5727-5730 (2001).
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- [6] R.W. Wolfe, R. E. Newnham, D. K. Smith, M. L. Kay, Ferroelectrics 3, (1), 1-7 (1971).
- [7] J. Ricote, L. Pardo, A. Moure, A. Castro, P Milian, D. Chateigner, J. Europ. Ceram. Soc. 21, 1403-1407 (2001).
- [8] Z. Zhang, H. Yan, X. Dong, Y. Wang, Mat. Res. Bull. 38,241-248 (2003).
- [9] M. Adamczyk, Z. Ujma, M. Pawelczyk, J. Mater. Sei. 41, (16), 5317-5322 (2006).
- [10] C. Miranda, M. E. V. Costa, M. Avdeev, A. L. Kholkin, J. L. Baptista, J. Europ. Ceram. Soc. 21,1303-1306 (2001).
- [11] V. V. Shvartsman, M. E. Costa, M. Avdeev, A. L. Kholkin, Ferroelectrics 296, 187-197 (2003).
- [12] S. M. Blake, M. J. Falconer, M. McCreedy, et al., J. Mater. Chem. 7, 1609(1997).
- [13] R. Macquart, B. J. Kennedy, T. Vogt, Ch. J. Howard, Phys. Rev. B 66, 212102 (2002).
- [14] Rodriguez-Carvajal, J. Physica B 55,129 (1993).
- [15] Z. Z. Huang, H. I. Chan, K.W. Kwok, C. J. Choy, J. Mater. Sci. 35, 1793-1795 (2000).
- [16] Z. Zhou, B. Cheng, Y. Li, X. Dong, Mater. Chem. Phys. 104, 225-229 (2007).
- [17] Z. Y. Zhou, X. L. Dong, H. Chen, H. X. Yan, J. Am. Ceram. Soc 89, 1756-1760 (2006).
- [18] M. Adamczyk, Z. Ujma, M. Pawełczyk, Dielectric properties of BaBi2Nb2O9 ceramics, Journal of Materials Science 41, 16, 5317 (2006).
- [19] H. T. Martirena, J. C. Burfoot, J. Phys. C: Solid State Phys. 7, 3182-3192(1974).
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Bibliografia
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