Determination of the thickness of BN layers on the Al₂O₃ substrate by FT-IR spectroscopy

• Autorzy: Możdżonek Małgorzata , Caban Piotr .A. , Gaca Jarosław , Wójcik Marek , Piątkowska Anna

Identyfikatory

DOI

10.34769/azkm-y326

Warianty tytułu

PL

Wyznaczanie grubości warstw BN na podłożu Al₂O₃ za pomocą spektroskopii FT-IR

• Języki publikacji: EN

Abstrakty

EN

Hexagonal boron nitride (h-BN) is an attractive material for applications in electronics. The technology of devices based on BN requires non-destructive and fast methods of controlling the parameters of the produced layers. Boron nitride layers of different thickness were grown on sapphire substrates (Al₂O₃) using the MOCVD method. The obtained films were characterized by FT-IR spectroscopy using IRR and ATR techniques and by the XRR and SEM methods. We showed that by analyzing the ATR or reflectance spectrum in the range of 600-2500 cm-1 we can measure the thickness of a BN layer on the Al₂O₃ substrate. Our measuring method allows measuring the layers with a thickness from ~2 nm to approx. 20 nm.

PL

Heksagonalny azotek boru (h-BN) jest atrakcyjnym materiałem do zastosowań w elektronice. Technologia wytwarzania urządzeń z zastosowaniem warstw h-BN wymaga nieniszczących i szybkich metod kontroli parametrów produkowanych warstw. Warstwy azotku boru o różnej grubości wyhodowano na podłożach szafirowych metodą MOCVD. Otrzymane warstwy scharakteryzowano za pomocą spektroskopii FT-IR z użyciem technik IRR i ATR oraz metodami XRR i SEM. Pokazaliśmy, że analizując widmo ATR lub odbicia w zakresie 600-2500 cm-1 można zmierzyć grubość warstwy BN na podłożu Al₂O₃. Nasza metoda pomiarowa pozwala na pomiar warstw o grubości od ~2 nm do ok. 20 nm.

Słowa kluczowe

EN

h-BN layers; ATR; IRR; XRR; thickness measurement; Al2O3

PL

warstwy h-BN; ATR; IRR; XRR; pomiar grubości; Al2O3

• Wydawca: Sieć Badawcza Łukasiewicz - Instytut Technologii Materiałów Elektronicznych
• Czasopismo: Materiały Elektroniczne
• Rocznik: 2020
• Tom: T. 48, nr 1-4
• Strony: 15--20
• Opis fizyczny: Bibliogr. 22 poz., rys., tab.

Twórcy

autor

Możdżonek Małgorzata

• Łukasiewicz Research Network - Institute of Electronic Materials Technology, 133 Wólczyńska Str., 01-919 Warsaw, Poland

autor

Caban Piotr .A.

• Łukasiewicz Research Network - Institute of Electronic Materials Technology, 133 Wólczyńska Str., 01-919 Warsaw, Poland

autor

Gaca Jarosław

• Łukasiewicz Research Network - Institute of Electronic Materials Technology, 133 Wólczyńska Str., 01-919 Warsaw, Poland

autor

Wójcik Marek

• Łukasiewicz Research Network - Institute of Electronic Materials Technology, 133 Wólczyńska Str., 01-919 Warsaw, Poland

autor

Piątkowska Anna

• Łukasiewicz Research Network - Institute of Electronic Materials Technology, 133 Wólczyńska Str., 01-919 Warsaw, Poland

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