PL EN


Preferencje help
Widoczny [Schowaj] Abstrakt
Liczba wyników
Tytuł artykułu

Morphological features in aluminum nitride epilayers prepared by magnetron sputtering

Identyfikatory
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
The aim of this study is to characterize the surface topography of aluminum nitride (AlN) epilayers prepared by magnetron sputtering using the surface statistical parameters, according to ISO 25178-2:2012. To understand the effect of temperature on the epilayer structure, the surface topography was investigated through atomic force microscopy (AFM). AFM data and analysis of surface statistical parameters indicated the dependence of morphology of the epilayers on their growth conditions. The surface statistical parameters provide important information about surface texture and are useful for manufacturers in developing AlN thin films with improved surface characteristics. These results are also important for understanding the nanoscale phenomena at the contacts between rough surfaces, such as the area of contact, the interfacial separation, and the adhesive and frictional properties.
Wydawca
Rocznik
Strony
175--184
Opis fizyczny
Bibliogr. 51 poz., rys., tab.
Twórcy
autor
  • University of Silesia, Faculty of Computer Science and Materials Science, Institute of Informatics, Department of Biomedical Computer Systems, ul. Będzińska 39, 41-205 Sosnowiec, Poland
autor
  • Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technická 8, 616 00 Brno, Czech Republic
autor
  • Technical University of Cluj-Napoca, Faculty of Mechanical Engineering, Department of AET, Discipline of Descriptive Geometry and Engineering Graphics, 103-105 B-dul Muncii St., Cluj-Napoca 400641, Cluj, Romania
autor
  • Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technická 8, 616 00 Brno, Czech Republic
autor
  • Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technická 8, 616 00 Brno, Czech Republic
  • University of Milan-Bicocca, 20125 Milano, Italy
autor
  • Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technická 8, 616 00 Brno, Czech Republic
Bibliografia
  • [1] VASHISHTA P., KALIA R.K., NAKANO A., RINO J.P., J. Appl. Phys., 109 (2011), 033514:1-8.
  • [2] LITIMEIN F., BOUHAFS B., DRIDI Z., RUTERANA P., New J. Phys., 4 (2002), 64.1.
  • [3] NORTHRUP J.E., DI FELICE R., NEUGEBAUER J., Phys. Rev. B, 55 (20) (1997), 13878.
  • [4] KAR J.P., BOSE G., Aluminum Nitride (AlN) film based acoustic devices: material synthesis and device fabrication, in M.G. BEGHI (Ed.), Acoustic Waves – From Microdevices to Helioseismology, InTech, 2011, p. 563.
  • [5] GUDA A.A., MAZALOVA V.L., YALOVEGA G.E., SOLDATOV A.V., J. Surf. Invest.-X-Ray+, 3 (3) (2009), 460.
  • [6] AHMAD M.A., PLANA R., IEEE Microw.Wirel. Co., 19 (3) (2009), 140.
  • [7] AUGER M.A., VAZQUEZ L., JERGEL M., SANCHEZ O., ALBELLA J.M., Surf. Coat. Tech., 180 – 181 (2004), 140.
  • [8] http://www.dupont.com/products-and-services/electronic-electrical-materials/uses-and-applications/microcircuit-materials.html.
  • [9] XIONG C., PERNICE W.H.P., SUN X., SCHUCK C., FONG K.Y., TANG H.X., New J. Phys., 14 (095014) (2012), 1.
  • [10] http://www.coorstek.com/resource-library/library/8510-1843-Aluminum_Nitride_Substrates.pdf.
  • [11] LA SPINA L., NANVER L.K., SCHELLEVIS H., IBORRA E., CLEMENT M., OLIVARES J., ESSDERC, (2007), 354.
  • [12] YOSHIDA M., OKUMIYA M., ICHIKI R., TEKMEN C., KHALIFA W., TSUNEKAWA Y., HARA T., J. Plasma Fusion. Res., 8 (2009), 1447.
  • [13] GARCIA-MENDEZ M., MORALES-RODRIGUES S., MACHORRO R., DE LA CRUZ W., Rev. Mex. Fis, 54 (4) (2008), 271.
  • [14] STAFINIAK A., MUSZY´N SKA D., SZYSZKA A., PASZKIEWICZ B., PTASI´N SKI K., PATELA S., PASZKIEWICZ R., TŁACZAŁA M., Opt. Appl., 39 (4) (2009), 717.
  • [15] KARMANN S., SCHENK H.P.D., KAISER U., FISSEL A., RICHTER W.O., Mater. Sci. Eng. B-Adv., 50 (1997), 228.
  • [16] JAGANNADHAM K., SHARMA A.K., WEI Q., KALYANRAMAN R., NARAYAN J., J. Vac. Sci. Technol. A, 16 (5) (1998), 2804.
  • [17] JONES D.J., FRENCH R.H., MULLEJANS H., LOUGHIN S., DORNEICH A.D., CARCIA P.F., J. Mater. Res., 14 (11) (1999), 4337.
  • [18] ISHIKAWA R., LUPINI A.R., OBA F., FINDLAY S.D., SHIBATA N., TANIGUCHI T., WATANABE K., HAYASHI H., SAKAI T., TANAKA I., IKUHARA Y., PENNYCOOK S.J., Sci. Rep.-UK, 4 (2014), 3778.
  • [19] AUGER M.A., VÁZQUEZ L., SÁNCHEZ O., JERGEL M., CUERNO R., CASTRO M., J. Appl. Phys., 97 (12) (2005), 123528.
  • [20] MAGNUSON M., MATTESINI M., HÖGLUND C., BIRCH J., HULTMAN L., Phys. Rev. B, 80 (155105) (2009), 1.
  • [21] EOM D., NO S.Y., HWANG C.S., KIM H.J., J. Electrochem. Soc., 153 (4) (2006), C229.
  • [22] WALTER S., HERZOG T., HEUER H., BARTZSCH H., GLOESS D., Smart ultrasonic sensors systems: Investigations on aluminum nitride thin films for the excitation of high frequency ultrasound, 18th World Conference on Nondestructive Testing, 16 – 20 April 2012, Durban, South Africa, pp.1-7.
  • [23] SARAVANAN S., KEIM E.G., KRIJNEN G.J.M., ELWENSPOEK M., Microscopy of Semiconducting Materials, Springer Proceedings in Physics, 107 (2005), 75.
  • [24] ROSENBERGER L., BAIRD R., MCCULLEN E., AUNER G., SHREVE G., Surf. Interface. Anal., 40 (9) (2008), 1254.
  • [25] GUERRERO R.M., GARCÍA J.R.V., Superficies y Vacio, 9 (1999), 82.
  • [26] CHOUDHARY R.K., MISHRA P., BISWAS A., BIDAYE A.C., ISRN Mater. Sci., 2013 (2013), 759462.
  • [27] http://ia.physik.rwth-aachen.de/research/ sputtering/www-sputter-eng.pdf.
  • [28] LUNDIN D., SARAKINOS K., J. Mater. Res., 27 (5) (2012), 780.
  • [29] SHON C.H., LEE J.K., Appl. Surf. Sci., 192 (1 – 4) (2002), 258.
  • [30] KELLY P.J., ARNELL R.D., Vacuum, 56 (2000), 159.
  • [31] http://www.nano.iisc.ernet.in/RF% 20sputtering%20manual_2010.pdf.
  • [32] SUDHIR G.S., FUJII H., WONG W.S., KISIELOWSKI C., NEWMAN N., DIEKER C., LILIENTAL-WEBER Z., RUBIN M.D., WEBER E.R., J. Electron. Mater., 27 (4) (1998), 215.
  • [33] NISHIMURA M., ISHIGURO T., Mater. Trans., 44 (11) (2003), 2417.
  • [34] MISHIN S., MARX D.R., SYLVIA B., LUGHI V., TURNER K.L., CLARKE D.R., IEEE Int. Ultrason. Symposium, 2 (2003), 2028.
  • [35] YOSHIDA M., OKUMIYA M., ICHIKI R., KHALIFA W., TEKMEN C., TSUNEKAWA Y., HARA T., TANAKA K., Plasma Process Polym., 6 (2009), S310-S313.
  • [36] DALLAEVA D.S., BILALOV B.A., GITIKCHIEV M.A., KARDASHOVA G.D., SAFARALIEV G.K., TOMÁNEK P., ŠKARVADA P., SMITH S., Thin Solid Films, 526 (2012), 92.
  • [37] HASS G., THUN R.F., Physics of thin films, Academic Press: New York, London, 1964, p. 396.
  • [38] http://www.ntmdt.ie/data/media/files/accessories/afm_probes_accessories_catalogue.pdf.
  • [39] BHUSHAN B., Introduction to Tribology, 2nd Ed., John Wiley & Sons Ltd., New York, 2013.
  • [40] ¸TALU¸S., Ph.D. Thesis: Researches concerning the cold rolling process of external cylindrical threads, The Technical University of Cluj-Napoca, Faculty of Machine Building, Romania, 1998.
  • [41] CÎRSTOIU C.A., The Romanian Review Precision Mechanics, Optics & Mechatronics, 38 (2010), 163.
  • [42] RAOUFI D., HOSSEINPANAHI F., J. Mod. Phys., 3 (8) (2012), 645.
  • [43] ¸TALU ¸S., GHAZAI A.J., STACH S., HASSAN A., HASSAN Z., ¸TALU M., J. Mater. Sci.-Mater. El., 25 (1) (2014), 466.
  • [44] ¸TALU¸S., MARKOVI´C Z., STACH S., MARKOVI´C B.T., ¸TALU M., Appl. Surf. Sci., 289 (2014), 97.
  • [45] ¸TALU¸S., STACH S., MÉNDEZ A., TREJO G., ¸TALU M., J. Electrochem. Soc., 161 (2014), D44.
  • [46] ¸TALU¸S., STACH S., MAHAJAN A., PATHAK D., WAGNER T., KUMAR A., BEDI R.K., ¸TALU M., Electron. Mater. Lett., 10 (4) (2014), 719.
  • [47] ¸TALU¸S., STACH S., MAHAJAN A., PATHAK D., WAGNER T., KUMAR A., BEDI R.K., Surf. Interface. Anal., 46 (6) (2014), 393.
  • [48] http://www.iso.org/iso/catalogue_detail.htm?csnumber=42785.
  • [49] http://www.digitalsurf.fr/en/mntspm.html.
  • [50] http://www.graphpad.com/scientific-software/instat/.
  • [51] RUSS C.J., The image processing handbook, 4th Ed. CRC Press, Raleigh, North Carolina, 2002, p. 258
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-4bc56975-3114-4ab2-9e28-d437189b9b29
JavaScript jest wyłączony w Twojej przeglądarce internetowej. Włącz go, a następnie odśwież stronę, aby móc w pełni z niej korzystać.