Optical investigations of microwave induced synthesis of zinc oxide thin-film

• Autorzy: Ansari A. R. , Hussain S. , Imran M. , Al-Ghamdi A. A. , Chandan M. R.

Identyfikatory

DOI

10.1515/msp-2018-0041

• Języki publikacji: EN

Abstrakty

EN

In this article, ZnO thin-film deposition on a glass substrate was done using microwave induced oxygen plasma based CVD system. The prepared thin-films were tested in terms of crystallinity and optical properties by varying the microwave power. The effect of power variation on the morphology and size of final products was carefully investigated. The crystal structure, chemical composition and morphology of the final products were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-Vis spectroscopy, Raman spectroscopy and photoluminescence (PL). This technique confirmed the presence of hexagonal ZnO nanocrystals in all the thin-films. The minimum crystallite grain size as obtained from the XRD measurements was ~9.7 nm and the average diameter was ~18 nm.

Słowa kluczowe

EN

ZnO; thin film; microwave CVD; XRD; SEM; UV; PL; Raman spectroscopy

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2018
• Tom: Vol. 36, No. 2
• Strony: 304--309
• Opis fizyczny: Bibliogr. 27 poz., rys., tab.

Twórcy

autor

Ansari A. R.

• Centre of Nanotechnology, King Abdulaziz University, Jeddah 21589, Saudi Arabia

autor

Hussain S.

• Electrical Engineering Department, Faculty of Engineering, Jazan University, P.O. Box 706, Jazan 45142, Saudi Arabia

autor

Imran M.

• Chemical Engineering Department, Faculty of Engineering, Jazan University, P.O. Box 706, Jazan 45142, Saudi Arabia

autor

Al-Ghamdi A. A.

• Centre of Nanotechnology, King Abdulaziz University, Jeddah 21589, Saudi Arabia

autor

Chandan M. R.

• Chemical Engineering Department, School of Civil and Chemical Engineering, VIT University, Vellore, TN 632 014, India

Bibliografia

• [1] BUOT F.A., Phys Rep., 234(1993), 73.
• [2] HUANG S., SCHLICHTHÖRL G., NOZIK A., GRÄTZEL M., FRANK A., J. Phys. Chem. B, 101 (1997), 2576.
• [3] LU L., LI R., FAN K., PENG T., Sol. Energy, 84 (2010), 844.
• [4] ZHANG H., CHEN B., JIANG H., WANG C., WANG H., WANG X., Biomaterials, 32 (2011), 1906.
• [5] CHOPRA L., MAJOR S., PANDYA D.K., RASTOGI R.S., VANKAR V.D., Thin Solid Films, 1021 (1983), 1.
• [6] ZANG C.H., LIU Y.C., ZHAO D.X., ZHANG Y.S., Physica B, 404 (2009), 315.
• [7] LEE J.S., ISLAM M.S., KIM S., Sensor. Actuat. BChem., 126 (2007), 73.
• [8] LIUA Y.L, LIUA Y.C., LIUB Y.B., SHENA D.Z., LUA Y.M., ZHANGA J.Y., FANA X.W., Solid State Commun., 138 (2006), 521.
• [9] ISMAIL L.Z., YOUSSIF M.I., MONEIM H.M.A., Mater. Chem. Phys., 76(2002), 69.
• [10] SUN Y., FUGE G.M., ASHFOLD M.N.R., Chem. Phys. Lett., 396 (2004), 21.
• [11] AL-GAASHANI R., RADIMAN S., TABET N., DAUD A.R., Mater. Chem. Phys., 125 (2011) 846.
• [12] ANITHA S.N., JAYAKUMARI I., J. Nanosci. Nanotechno., 1 (2015), 26.
• [13] SAHOO T., KIM M., LEE M.H., JANG L.W., JEON J.W., KWAK J.S., KO I.Y., LEE I.H., J. Alloy. Compd., 491 (2010), 308.
• [14] AZAROFF L.V., Elements of X-Ray Crystallography, McGraw Hill, New York, 1968.
• [15] VANHEERDEN J.L., SWANEPOEL R., Thin Solid Films, 299 (1997), 72.
• [16] HONG R.Y., QIAN J.Z., CAO J.X., Powder Technol., 163 (2006), 160.
• [17] ZHANG R., YIN P.G., WANG N., GUO L., Solid State Sci., 11 (2009), 865.
• [18] AADILA A., AFAAH A.N., ASIB N.A.M., MAHMUD M.R., ALROKAYAN S.A.H., KHAN H.A., MOHAMED R., RUSOP M., KHUSAIMI Z., Mater. Sci. Eng. B-Adv., 83 (2015), 012007.
• [19] WONG E.M., SEARSON P.C., Appl. Phys. Lett., 74 (1999), 2939.
• [20] MAHAMUNI S., BORGOHAIN K., BENDRE B.S., LEPPERT V.J., RISBUD S.H., J. Appl. Phys., 85 (1999), 2861.
• [21] FONOBEROV V.A., BALANDIN A.A., Appl. Phys. Lett., 85 (2004), 5971.
• [22] LIU Y.L., LIU Y.C., FENG W., ZHANG J.Y., LU Y.M., SHEN D.Z., FANS X.W., WANG D.J., ZHAO Q.D., J. Chem. Phys., 122 (2005), 174703.
• [23] CHIENG B.W., LOO Y.Y., Mater. Lett., 73 (2012), 78.
• [24] ZAK A.K., ABRISHAMI M.E., ABDMAJID W.H., Ceram. Int., 37 (2011), 393.
• [25] TAUC J., Amorphous and Liquid Semiconductors Plenum, Springer, London, 1974.
• [26] DAVIS E.A., MOTT N.F., Philos. Mag., 22 (1970), 903.
• [27] KUMAR S.S., VENKATESWARLU P., RAO V.R., RAO G.N., Int. Nano Lett., 3(2013), 30.

Uwagi

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2018).