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Abstrakty
Undoped ZnO thin films have been prepared on glass substrates at different substrate temperatures by spray pyrolysis method. The effect of temperature on the structural, morphological and optical properties of n-type ZnO films was studied. The X-ray diffraction (XRD) results confirmed that the ZnO thin films were polycrystalline with wurtzite structure. Scanning electron microscopy (SEM) measurements showed that the surface morphology of the films changed with temperature. The studies demonstrated that the ZnO film had a transmission of about 85 % and energy gap of 3.28 eV at 450 degrees C. The RBS measurements revealed that ZnO layers with a thickness up to 200 nm had a good stoichiometry.
Wydawca
Czasopismo
Rocznik
Tom
Strony
491--496
Opis fizyczny
Bibliogr. 23 poz., rys., tab.
Twórcy
autor
- Laboratory of Electron Microscopy and Materials Sciences University of Science and Technology of Oran, B.P. 1505, 31000 El-Mnaouer Oran, Algeria
autor
- Laboratory of Electron Microscopy and Materials Sciences University of Science and Technology of Oran, B.P. 1505, 31000 El-Mnaouer Oran, Algeria
autor
- Laboratory of Electron Microscopy and Materials Sciences University of Science and Technology of Oran, B.P. 1505, 31000 El-Mnaouer Oran, Algeria
Bibliografia
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- [2] GOYAL D.J., AGASHE C., TAKWALE M.G., MARATHE B.R., BHIDE V.G., J. Mater. Sci., 27 (17) (1992), 4705.
- [3] BAKHA Y., BENDIMERAD K.M., HAMZAOUI S., Eur. Phys. J. - Appl. Phys., 55 (2011), 30103.
- [4] FA¨Y S., SHAH A., Zinc Oxide Grown by CVD Process as Transparent Contact for Thin Film Solar Cell Applications, in: ELLMER K., KLEIN A., RECH B., (Eds.) Transparent Conductive Zinc Oxide. Basics and Applications in Thin Film Solar Cells, Springer Series in Materials Science, Vol. 104, Springer Berlin Heidelberg, 2008, pp. 235 – 302.
- [5] BOUDERBALA M., HAMZAOUI S., STAMBOULI A.B., BOUZIANE H., Appl. Energ., 64 (1 – 4) (1999), 89.
- [6] ZHANG X.-A., ZHANG J.-W., ZHANG W.-F., WANG D., BI Z., BIAN X.-M., HOU X., Thin Solid Films, 516 (10) (2008), 3305.
- [7] KAMALASANAN M.N., CHANDRA S., Thin Solid Films, 288 (1 – 2) (1996), 112.
- [8] OLVERA DE LA M.L., MALDONADO A., VEGAP ´E REZ J., SOLORZA-FERIA O., Mater. Sci. Eng. BAdv., 174 (1 – 3) (2010), 42.
- [9] DUTTA V., Energy Procedia, 3 (2011), 58.
- [10] VIMALKUMAR T.V., POORNIMA N., SUDHA KARTHA C., VIJAYAKUMAR K.P., Appl. Surf. Sci., 256 (20) (2010), 6025.
- [11] ASHOUR A., KAID M.A., EL-SAYED N.Z., IBRAHIM A.A., Appl. Surf. Sci., 252 (22) (2006), 7844.
- [12] BANERJEE A.N., GOSH C.K., CHATTOPADHYA K.K., MINOURA H., SARKAR A.K., AKIBA A., KAMIYA A., ENDO T., Thin Solid Films, 496 (1) (2006), 112.
- [13] KIM H.W., KIM N.H., LEE C., RYU J.H., LEE N.E., J. Korean Phys. Soc., 44 (2004), 14.
- [14] MA T.Y., KIM S.H., MOON H.Y., PARK G.C., KIM Y.J., KIM K.W., Jpn. J. Appl. Phys., 35 (1996), 6208.
- [15] FAN X.M., LIAN J.S., GUO Z.X., LU H.J., J. Cryst. Growth, 279 (2005), 447.
- [16] BANERJEE A.N., GHOSH C.K., CHATTOPADHYAY K.K., MINOURA H., SARKAR A.K., AKIBA A., KAMIYA A., ENDO T., Thin Solid Films, 496 (2006), 112.
- [17] DIKOVSKA A.O., ATANASOV P.A., VASILEV C., DIMITROV I.G., STOYANCHOV T.R., J. Optoelectron. Adv. M., 7 (2005), 1329.
- [18] SCHERRER P., Nachr. Ges. Wiss. G¨ottingen, 2 (1918), 96.
- [19] SCHRODER D.K., Semiconductor Material and Device Characterization, Wiley, New York, 1990.
- [20] CULLITY B.D., Elements of X-ray Diffraction, Addison-Wesley, Reading, MA, 1978, p. 102.
- [21] PRASADA RAO T., SANTHOSH KUMAR M.C., ANBUMOZHI ANGAYARKANNI S., ASHOK M., J. Alloy. Compd., 485 (1 – 2) (2009), 413.
- [22] ILICAN S., CAGLAR M., CAGLAR Y., Mater. Sci.- Poland, 25 (2007), 715.
- [23] CRACIUN V., PERRIERE J., BASSIM N., SINGH R.K., CRACIUN D., SPEAR J., Appl. Phys. A, 25 (1999), 531.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-4a8ec1e0-e79f-4ce1-b91e-6dcfc688e517