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Application of radio frequency inductively coupled plasma in chemical vapor deposition process of diamond-like carbon films for modification of properties of deposited films

Identyfikatory
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
The authors have deposited the diamond-like carbon (DLC) films by radio frequency inductively coupled plasma enhanced chemical vapor deposition (RF ICP PECVD) method. The investigated DLC films with different sp3 fraction content were deposited on polished and textured silicon substrates. The sp3 fraction content of the deposited DLC films was ranging from 35 % to 70 % and was estimated from acquired Raman scattering spectra (excitation wavelength: 325 nm and 514.5 nm). The measurements of field emission characteristics were carried out in diode configuration. Emission properties of the DLC films were calculated from Fowler-Nordheim plots. The calculated electric field enhancement factor β was ranging from 56 to 198 for the DLC films deposited on polished substrates and from 115 to 445 for films deposited on textured substrates. The surface of the DLC films was observed by scanning electron microscope (SEM) after field emission measurements. The acquired SEM images reveled that the activation of field emission from the DLC films is connected with generation of structural damage to the DLC films.
Wydawca
Rocznik
Strony
80--85
Opis fizyczny
Bibliogr. 18 poz., rys., tab.
Twórcy
autor
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
  • Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
Bibliografia
  • [1] ROBERTSON J., Mat. Sci. Eng. B-Adv., 37 (2002), 129.
  • [2] DONNET C., ERDEMIR A., Tribology of Diamond-Like Carbon Films: Fundamentals and Applications, Springer, 2008.
  • [3] TOMOZEIU N., HART A., KLEINSORGE B., MILNE W.I., Diam. Relat. Mater., 8 (1999), 522.
  • [4] HAUERT R., Diam. Relat. Mater., 12 (2003), 583.
  • [5] GRONING O., KUTTEL O.M., GRONING P., SCHLAPBACH L., Appl. Surf. Sci., 111 (1997), 135.
  • [6] ROBERTSON J., Phys. Status Solidi A, 205 (9) (2008), 2233.
  • [7] BEWILOGUA K., HOFMANN D., Surf. Coat. Tech., 242 (2014), 214.
  • [8] HORNG R.H., KAO W.C., OU S.L., WUU D.S., Appl. Phys. Lett., 101 (2012), 171102.
  • [9] DEARNALEY G., ARPS J. H., Surf. Coat. Tech., 200 (2005), 2518.
  • [10] GRONAU R., SZMIDT J., FIREK P., CZERWOSZ E., JARZYŃSKA D., STARYGA E., Vacuum, 82 (2008), 962.
  • [11] OLESZKIEWICZ W., MARKOWSKI J., SRNANEK R., KIJASZEK W., GRYGLEWICZ J., KOVǍČ J., TŁACZAŁA M., Opt. Appl., 43 (1) (2013), 109.
  • [12] OLESZKIEWICZ W., KIJASZEK W., GRYGLEWICZ J., ZAKRZEWSKI A., GAJEWSKI K., KOPIEC D., KAMYCZEK P., POPKO E., TŁACZAŁA M., Proc. SPIE, 8902 (2013), 89022H.
  • [13] LEE K.R., EUN K.Y., LEE S., JEON D.R., Thin Solid Films, 290 - 291 (1996), 171.
  • [14] UMEHARA Y., MURAI S., KOIDE Y., MURAKAMI M., Diam. Relat. Mater., 11 (2002), 1429.
  • [15] ZUBEL I., GRANEK F., ROLA K., BANASZCZYK K., Appl. Surf. Sci., 258 (22) (2012), 9067.
  • [16] SHI J.R., SHI X., SUN Z., LAU S.P., TAY B.K., TAN H.S., Diam. Relat. Mater., 10 (2001), 76.
  • [17] CUI W.G., LAI Q.B., ZHANG L., WANG F.M., Surf. Coat. Tech., 205 (2010), 1995.
  • [18] INOMOTO H., HATTA A., KAWABATA K., KATODA T., HIRAKI A., Diam. Relat. Mater, 9 (2000), 1209.
Uwagi
PL
Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2018).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-4a8e762e-1d51-4e65-bdc1-406cf6d51c91
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