MOVPE Technology of Fe-Compensated InP Layers for the Quantum Cascade Laser Applications

• Autorzy: Badura Mikołaj

Identyfikatory

DOI

10.24425/ijet.2020.131890

• Języki publikacji: EN

Abstrakty

EN

Quantum cascade laser is one of the most sophisticated semiconductor devices. Its technology requires extremely high precision and layers quality. Device performance is limited by thermal extraction form laser core. One of solutions is to apply highly resistivity epitaxial material acting as insulating layer on top of the QCL. Present work describes consequent steps of elaboration of MOVPE technology of Fe-compensated InP layers for further applications in quantum cascade lasers.

Słowa kluczowe

EN

MOVPE technology; optoelectronics; quantum cascade laser; epitaxy

• Wydawca: Polish Academy of Sciences, Committee of Electronics and Telecommunication
• Czasopismo: International Journal of Electronics and Telecommunications
• Rocznik: 2020
• Tom: Vol. 66, No. 2
• Strony: 389--394
• Opis fizyczny: Bibliogr. 7 poz., fot., rys., wykr.

Twórcy

autor

Badura Mikołaj

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

Bibliografia

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• [7] T. Takanohashi, K. Nakai, K. Nakajima, SIMS and DLTS measurements on Fe-doped InP epitaxial layers grown by MOCVD, Jpn. J. Appl. Phys. 27 (1988) L113–L115. doi:10.1143/JJAP.27.L113.

Uwagi

Opracowanie rekordu ze środków MNiSW, umowa Nr 461252 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2020).