Two-dimensional modeling of surface photovoltage in metal/insulator/n-GaN structure with cylindrical symmetry

• Autorzy: Matys M , Powroznik P , Powroznik P , Kupka D , Adamowicz B
• Języki publikacji: EN

Abstrakty

EN

The rigorous numerical analysis of the surface photovoltage (SPV) versus excitation UV-light intensity (Φ), from 104 to 1020 photon/(cm2s) in a metal/insulator/n-GaN structure with a negative gate voltage (VG = –2 V) was performed using a finite element method. In the simulations we assumed a continuous U-shape density distribution function Dit(E) of the interface states and n-type doping concentration ND = 1016 cm–3. The SPV signal was calculated and compared in three different characteristic regions at the interface, namely i) under the gate centre, ii) near the gate edge and iii) between the gate and ohmic contact. We attributed the differences in SPV(Φ) dependences to the influence of the interface states in terms of the initial band bending and interface recombination controlled by the gate bias. The obtained results are useful for the design of GaN-based UV-radiation photodetectors.

Słowa kluczowe

EN

surface photovoltage; gallium nitride; metal-insulator-semiconductor (MIS) structure; interface states; photodetector

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2013
• Tom: Vol. 43, nr 1
• Strony: 47--52
• Opis fizyczny: Bibliogr. 7 poz., rys., wykr.

Twórcy

autor

Matys M

• Surface Physics and Nanostructure Department, Institute of Physics – Centre for Science and Education, Silesian University of Technology, Bolesława Krzywoustego 2, 44-100 Gliwice, Poland

autor

Powroznik P

autor

Powroznik P

autor

Kupka D

autor

Adamowicz B

Bibliografia

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• [2] SELBERHERR S., Analysis and Simulation of Semiconductor Devices, Springer, Wien, 1984.
• [3] RESHCHIKOV M.A., FOUSSEKIS M., BASKI A.A., Surface photovoltage in undoped n-type GaN, Journal of Applied Physics 107(11), 2010, article 113535.
• [4] RESHCHIKOV M.A., MORKOC H., Luminescence properties of defects in GaN, Journal of Applied Physics 97(6), 2005, article 061301.
• [5] HASEGAWA H., OHNO H., Unified disorder induced gap state model for insulator–semiconductor and metal–semiconductor interfaces, Journal of Vacuum Science and Technology B 4(4), 1986, pp. 1130–1138.52 M. MATYS et al.
• [6] ADAMOWICZ B., HASEGAWA H., Computer simulations of the surface photovoltage on Si and GaAs surfaces with U-shaped surface state continuum, Vacuum 54(1–4), 1999, pp. 173–177.
• [7] ADAMOWICZ B., HASEGAWA H., Computer analysis of surface recombination process at Si and compound semiconductor surfaces and behavior of surface recombination velocity, Japanese Journal of Applied Physics Part 1 37(3B), 1998, pp. 1631–1637.