Modeling and optimization of the YAG:Yb microchip laser passively Q-switched by YAG:Cr absorber

• Autorzy: Buryy O , Ubizskii S

Identyfikatory

DOI

10.5277/oa140412

• Języki publikacji: EN

Abstrakty

EN

Based on analytical and numerical solutions of the rate equations system and the heat conductivity equation, the model of the quasi-three-level passively Q-switched YAG:Yb/YAG:Cr microchip laser is developed. The obtained results are used for its optimization, i.e., for the determination of the output mirror reflectivity, the pumping beam radius, the thickness of the absorber and the phototropic centers concentration maximizing the energy in the laser pulse. The influence of the thermal load on the spatial parameters of the laser beam is also determined.

Słowa kluczowe

EN

Yb:YAG crystal; microlaser; Q-switching; numerical simulation

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2014
• Tom: Vol. 44, nr 4
• Strony: 621--636
• Opis fizyczny: Bibliogr. 14 poz., rys., wykr.

Twórcy

autor

Buryy O

• Department of Semiconductor Electronics, Lviv Polytechnic National University, Bandery 12, 79646 Lviv, Ukraine

autor

Ubizskii S

• Department of Semiconductor Electronics, Lviv Polytechnic National University, Bandery 12, 79646 Lviv, Ukraine

Bibliografia

• [1] KASAMATSU T., SEKITA H., KUWANO Y., Temperature dependence and optimization of 970-nm diode--pumped Yb:YAG and Yb:LuAG lasers, Applied Optics 38(24), 1999, pp. 5149–5153.
• [2] JUN DONG, PEIZHEN DENG, JUN XU, Spectral and luminescence properties of Cr4+ and Yb3+ ions in yttrium aluminium garnet (YAG), Optical Materials 14(2), 2000, pp. 109–113.
• [3] PATEL F.D., HONEA E.C., SPETH J., PAYNE S.A., HUTCHESON R., EQUALL R., Laser demonstration of Yb3Al5O12 (YbAG) and materials properties of highly doped Yb:YAG, IEEE Journal of Quantum Electronics 37(1), 2001, pp. 135–144.
• [4] HÖNNINGER C., PASCHOTTA R., GRAF M., MORIER-GENOUD F., ZHANG G., MOSER M., BISWAL S., NEES J., BRAUN A., MOUROU G.A., JOHANNSEN I., GIESEN A., SEEBER W., KELLER U., Ultrafast ytterbium-doped bulk lasers and laser amplifiers, Applied Physics B 69(1), 1999, pp. 3–17.
• [5] KALISKY Y., LABBE C., WAICHMAN K., KRAVCHIK L., RACHUM U., DENG P., XU J., DONG J., CHEN W., Passively Q-switched diode-pumped Yb:YAG laser using Cr4+-doped garnets, Optical Materials 19(4), 2002, pp. 403–413.
• [6] JUN DONG, PEIZHEN DENG, YUPU LIU, YINGHUA ZHANG, JUN XU, WEI CHEN, XINGLONG XIE, Passively Q-switched Yb:YAG laser with Cr4+:YAG as the saturable absorber, Applied Optics 40(24), 2001, pp. 4303–4307.
• [7] SUMIDA D.S., FAN T.Y., Room-temperature 50-mJ/pulse side-diode-pumped Yb:YAG laser, Optics Letters 20(23), 1995, pp. 2384–2386.
• [8] SPÜHLER G.J., PASCHOTTA R., KULLBERG M.P., GRAF M., MOSER M., MIX E., HUBER G., HARDER C., KELLER U., A passivle Q-switched Yb:YAG microchip laser, Applied Physics B 72(3), 2001, pp. 285–287.
• [9] LU M., CHATWIN C.R., YOUNG R.C.D., BIRCH P.M., Numerical simulation of a CW-pumped Cr:YAG passively Q-switched Yb:YAG pulsed laser, Optics and Lasers in Engineering 47(6), 2009, pp. 617–621.
• [10] BURYY O.A., UBISZKII S.B., MELNYK S.S., MATKOVSKII A.O., The Q-switched Nd:YAG and Yb:YAG microchip lasers optimization and comparative analysis, Applied Physics B 78(3–4), 2004, pp. 291–297.
• [11] GUOHUA XIAO, BASS M., A generalized model for passively Q-switched lasers including excited state absorption in the saturable absorber, IEEE Journal of Quantum Electronics 33(1), 1997, pp. 41–44.
• [12] MIERCZYK Z., Nieliniowe absorbery: badania właściwości, technologia i wybrane zastosowania, Wojskowa Akademia Techniczna, Warszawa, 2000, pp. 145–154, (in Polish).
• [13] BURYY O.A., SUGAK D.Y., UBIZSKII S.B., IZHNIN I.I., VAKIV M.M., SOLSKII I.M., The comparative analysis and optimization of the free-running Tm3+:YAP and Tm3+:YAG microlasers, Applied Physics B 88(3), 2007, pp. 433–442.
• [14] DONG J., SHIRAKAWA A., UEDA K.-I., Sub-nanosecond passively Q-switched Yb:YAG/Cr4+:YAG sandwiched microchip laser, Applied Physics B 85(4), 2006, pp. 513–518.