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Abstrakty
The present paper describes the effect of target power on the properties of Ti thin films prepared by DC magnetron sputtering with (triode mode) and without (diode mode) supported discharge. The traditional diode magnetron sputtering with an addition of a hot filament has been used to sustain the discharge at a lower pressure. The effect of target power (60, 80, 100 and 120 W) on the physical properties of Ti thin films has been studied in diode and triode modes. XRD studies showed that the Ti thin films prepared at a target power up to 100 W in diode mode were amorphous in nature. The Ti thin films exhibited crystalline structure at much lower target power of 80 W with a preferred orientation along (0 0 2) plane. The grain size of Ti thin films prepared in triode mode increased from 64 nm to 80 nm, whereas in diode mode, the grain size increased from 2 nm to 5 nm. EDAX analysis confirmed that the incorporation of reactive gases was lower in triode mode compared to diode mode. The electrical resistivity of Ti thin films deposited in diode mode was found to be 85 µΩ⋅cm (target power 120 W). The electrical resistivity of Ti thin films in triode mode was found to be deceased to 15.2 µΩ⋅cm (target power 120 W).
Wydawca
Czasopismo
Rocznik
Tom
Strony
173--180
Opis fizyczny
Bibliogr. 26 poz., rys., tab.
Twórcy
autor
- Department of Physics, University College of Engineering, Anna University, Dindigul, TamilNadu, 624 622, India
autor
- Department of Physics, University College of Engineering, Anna University, Dindigul, TamilNadu, 624 622, India
autor
- School of Physics, Madurai Kamaraj University, Madurai, Tamil Nadu 625 021, India
Bibliografia
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Uwagi
Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-49b1db8e-feb7-4b60-bb6b-a958ae7ee6ef