How to enhance a room-temperature operation of diode lasers and their arrays

• Autorzy: Sarzała R. P. , Sokół A. K. , Kuc M. , Nakwaski W.

Identyfikatory

DOI

DOI: 10.5277/oa160206

• Języki publikacji: EN

Abstrakty

EN

A key problem to be solved during designing productive diode lasers and their lasing arrays is their proper thermal management enabling efficient high-power operation. Strictly speaking, the above demand leads to optimization of their structures to enhance lasing performance for high operation currents. It is well-known that deterioration of laser performance is mostly induced by excessive temperature increases within their volumes. In diode-laser arrays, additionally thermal crosstalk between array emitters should be taken into account. In the present paper, physics of heat-flux generation within the laser-diode volume and its extraction from it is analysed and described with the aid of our self-consistent simulation procedure. Then their thermal optimization is discussed including a proper design of a heat-flux generation within the laser volume, enhancement of its transport towards a laser heat-sink and, additionally in laser arrays, reduction of a thermal crosstalk between individual array emitters. The analysis is carried out using modern nitride edge-emitting ridge-waveguide lasers and their one-dimensional arrays as well as arsenide semiconductor disk lasers as typical examples of modern diode-laser designs. Physical processes responsible for heat-flux generation within these devices and heat-flux extraction from their volumes are analysed and an impact of some construction details on these processes is explained.

Słowa kluczowe

EN

diode laser; thermal management; thermal crosstalk; semiconductor arrays

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2016
• Tom: Vol. 46, nr 2
• Strony: 213--226
• Opis fizyczny: Bibliogr. 16 poz., rys.

Twórcy

autor

Sarzała R. P.

• Photonics Group, Institute of Physics, Lodz University of Technology, ul. Wólczańska 219, 90-924 Łódź, Poland

autor

Sokół A. K.

• Photonics Group, Institute of Physics, Lodz University of Technology, ul. Wólczańska 219, 90-924 Łódź, Poland

autor

Kuc M.

• Photonics Group, Institute of Physics, Lodz University of Technology, ul. Wólczańska 219, 90-924 Łódź, Poland

autor

Nakwaski W.

• Photonics Group, Institute of Physics, Lodz University of Technology, ul. Wólczańska 219, 90-924 Łódź, Poland

Bibliografia

• [1] KUC M., SARZAŁA R.P., Thermal model of nitride edge-emitting laser diodes, Optica Applicata 39(4), 2009, pp. 663–672.
• [2] KUC M., SARZAŁA R.P., NAKWASKI W., Thermal crosstalk in arrays of III-N-based lasers, Materials Science and Engineering: B 178(20), 2013, pp. 1395–1402.
• [3] GRUNDMANN M., The Physics of Semiconductors: An Introduction Including Nanophysics and Applications, 2nd Ed., Springer-Verlag, Berlin, New York, 2010.
• [4] CASEY H.C., JR., STERN F., Concentration-dependent absorption and spontaneous emission of heavily doped GaAs, Journal of Applied Physics 47(2), 1976, pp. 631–643.
• [5] AGRAWAL G.P., DUTTA N.K., Semiconductor Lasers, 2nd Ed., Van Nostrand Reinhold, New York, 1993.
• [6] HAYASHI I., PANISH M.B., FOY P.W., SUMSKI S., Junction lasers which operate continuously at room temperature, Applied Physics Letters 17(3), 1970, pp. 109–111.
• [7] JAWULSKI K., KUC M., SARZAŁA R.P., Simplified thermal analysis of impast of diamond heat spreader on InGaN laser diode arrays, Proceedings of SPIE 8702, 2013, article 87020D.
• [8] KUC M., WASIAK M. SARZAŁA R.P., Impact of heat spreaders on thermal performance of III-N-based laser diode, IEEE Transactions on Components, Packaging and Manufacturing Technology 5(4), 2015, pp. 474–482.
• [9] KUC M., SARZAŁA R.P., STAŃCZYK S., PERLIN P., Numerical investigation of an impact of a top gold metallization on output power of a p-up III-N-based blue-violet edge emitting laser diode, Opto-Electronics Review 23(2), 2015, pp. 131–136.
• [10] RW edge-emitting diode lasers fabricated in the Institute of High Pressure Physics (Unipress) in Warsaw, Poland, private information.
• [11] INJEYAN H., GOODNO G.D., High-Power Laser Handbook, McGraw-Hill Companies, Inc., 2011.
• [12] PERLIN P., MARONA L., HOLC K., WISNIEWSKI P., SUSKI T., LESZCZYNSKI M., CZERNECKI R., NAJDA S., ZAJAC M., KUCHARSKI R., InGaN laser diode mini-arrays, Applied Physics Express 4(6), 2011, article 062103.
• [13] MUSZALSKI J., BRODA A., TRAJNEROWICZ A., WÓJCIK-JEDLIŃSKA A., SARZAŁA R.P., WASIAK M., GUTOWSKI P., SANKOWSKA I., KUBACKA-TRACZYK J., GOŁASZEWSKA-MALEC K., Switchable double wavelength generating vertical external cavity surface-emitting laser, Optics Express 22(6), 2014, pp. 6447–6452.
• [14] SOKÓŁ A.K., SARZAŁA R.P., Comparative analysis of thermal problems in GaAs- and InP-based 1.3-μ m VECSELs, Optica Applicata 43(2), 2013, pp. 325–341.
• [15] SOKÓŁ A.K., SARZAŁA R.P., Thermal management of GaInNAs/GaAs VECSELs, Opto-Electronics Review 21(2), 2013, pp. 191–198.
• [16] TROPPER A.C., HOOGLAND S., Extended cavity surface-emitting semiconductor lasers, Progress in Quantum Electronics 30(1), 2006, pp. 1–43

Uwagi

PL

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę.