CMOS Readout Circuit Integrated with Ionizing Radiation Detectors

• Autorzy: Szymański A. , Obrębski D. , Marczewski J. , Tomaszewski D. , Grodner M. , Pieczyński J.

Identyfikatory

DOI

10.2478/eletel-2014-0014

• Języki publikacji: EN

Abstrakty

EN

This paper describes the work performed in ITE on integration in one CMOS chip the ionizing radiation detectors with dedicated readout electronics. At the beginning, some realizations of silicon detectors of ionizing radiation are presented together with most important issues related to these devices. Next, two developed test structures for readout electronics are discussed in detail together with main features of non-typical silicon proces deployed.

Słowa kluczowe

EN

readout electronics; ASIC; SOI; ionizing radiation detectors

• Wydawca: Polish Academy of Sciences, Committee of Electronics and Telecommunication
• Czasopismo: International Journal of Electronics and Telecommunications
• Rocznik: 2014
• Tom: Vol. 60, No. 1
• Strony: 117--124
• Opis fizyczny: Bibliogr. 3 poz., wykr.

Twórcy

autor

Szymański A.

• Integrated Circuits and Systems Design Department, Instytut Technologii Elektronowej, Warsaw, Poland

autor

Obrębski D.

• Integrated Circuits and Systems Design Department, Instytut Technologii Elektronowej, Warsaw, Poland

autor

Marczewski J.

• Division of Microsystems and Nanostructure Technology, Instytut Technologii Elektronowej, Warsaw, Poland

autor

Tomaszewski D.

• Division of Microsystems and Nanostructure Technology, Instytut Technologii Elektronowej, Warsaw, Poland

autor

Grodner M.

• Integrated Circuits and Systems Design Department, Instytut Technologii Elektronowej, Warsaw, Poland

autor

Pieczyński J.

• Fraunhofer Institute for Microelectronic Circuits and Systems in Duisburg, Germany

Bibliografia

• [1] H. Niemiec, A. Bulgheroni, M. Caccia, P. Grabiec, M. Grodner, M. Jastrząb, W. Kucewicz, K. Kucharski, S. Kuta, J. Marczewski, M. Sapor, and D. Tomaszewski, “Monolihtic Active Pixel Sensor Realized in SOI Technology - Concept and Verification,” Microelectronics & Reliability, vol. 45, no. 7-8, pp. 1202–1207, 2005.
• [2] W. Kucewicz, P. Grabiec, K. Kucharski, J. Marczewski, W. Maziarz, H. Niemiec, F. Ruddell, M. Sapor, and D. Tomaszewski, “Development of Monolithic Active Pixel Sensor in SOI Technology Fabricated on the Wafer with Thick Device Layer,” in Proceedings of the 2008 IEEE Nuclear Science Symposium and Medical Imaging Conference and 16th International Workshop on Room Temperature Semiconductor, Dresden, Germany, 2008, pp. 1123–1125, ISBN 978-1-4244-2714-7, ISSN 1095-7863.
• [3] D. Obrębski, K. Kucharski, M. Grodner, A. Kokoszka, A. Malinowski, J. Lesiński, D. Tomaszewski, and J. Malesińska, “Development of MPW Service for Academises Based on ITE Proprietary CMOS Process,” in "Proceedings of MIXDES 2007". "Department of Microelectronics and Computer Science, Technical University of Lodz", 2007, pp. 69–73.