Influence of bath temperature on microstructure and NH3 sensing properties of chemically synthesized CdO thin films

• Autorzy: Sharma A. K. , Potdar S. S. , Yewale M. A. , Shirgaonkar Deepak B. , Pakhare K. S. , Sargar B. M. , Rokade M. V. , Patil U. M.

Identyfikatory

DOI

10.2478/msp-2019-0002

• Języki publikacji: EN

Abstrakty

EN

Cadmium oxide (CdO) thin films were synthesized using chemical bath deposition (CBD) method from aqueous cadmium nitrate solution. The bath temperatures were maintained at room temperature (25 °C) and at higher temperature (80 °C). The structural studies revealed that the films showed mixed phases of CdO and Cd(OH)₂ with hexagonal/monoclinic crystal structure. Annealing treatment removed the hydroxide phase and the films converted into pure CdO with cubic, face centered crystal structure. SEM micrographs of as-deposited films revealed nanowire-like morphology for room temperature deposited films while nanorod-like morphology for high temperature deposited films. However, cube-like morphology was observed after air annealing. Elemental composition was confirmed by EDAX analysis. Band gap energies of the as-deposited films varied over the range of 3 eV to 3.5 eV, whereas the annealed films showed band gap energy variation in the range of 2.2 eV to 2.4 eV. The annealed films were successfully investigated for NH₃ sensing at different operating temperatures and at different gas concentrations. The room temperature synthesized film showed a response of 17.3 %, whereas high temperature synthesized film showed a response of 13.5 % at 623 K upon exposure to 24 ppm of NH₃.

Słowa kluczowe

EN

CdO thin films; chemical bath deposition; X-ray diffraction; scanning electron microscopy; optical properties; EDAX; gas sensing

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2019
• Tom: Vol. 37, No. 1
• Strony: 25--32
• Opis fizyczny: Bibliogr. 24 poz., rys., tab.

Twórcy

autor

Sharma A. K.

• School of Physics, Shri Mata Vaishnodevi University, Kakryal, Katra-182320, J&K, India

autor

Potdar S. S.

• Department of Physics, Sanjeevan Engineering and Technology Institute, Panhala-416201, MS, India

autor

Yewale M. A.

• Department of Physics, New Arts, Commerce and Science College, Parner, Ahmednagar, MS, India

autor

Shirgaonkar Deepak B.

• Department of Physics, Ashokrao Mane Group of Institution, Vathar, Kolhapur, MS, India

autor

Pakhare K. S.

• Department of Chemistry, Anandibai Raorane Art, Commerce and Science College, Vaibhavwadi, MS-416810, India

autor

Sargar B. M.

• Material Science Research Laboratory, Department of Chemistry, Jaysingpur College, Jaysingpur, MS -416101, India

autor

Rokade M. V.

• Semiconductor Laboratory, Centre for Materials for Electronics Technology (C-MET), IDA Phase-III, Cherlapally, HCL (PO), Hyderabad-500051, India

autor

Patil U. M.

• Centre for Interdisciplinary Research, D.Y. Patil Education Society (Deemed to be University), Kolhapur-416006, India

Bibliografia

• [1] LEWIS B.G., PAINE D.C., MRS Bull., 25 (2000), 22.
• [2] KIM H., GILMORE C.M., PIQUE A., HORWITZ J.S., MATTOUSSI H., MURATA H., KAFAFI Z.H., CHRISEY D. B., J. Appl. Phys., 86 (1999), 6451.
• [3] SELVAN J.A.A., DELAHOY A.E., GUO S., LI Y.M., Sol. Energ. Mat. Sol. C., 90 (2006), 3371.
• [4] ANANDAN S., Curr. Appl. Phys., 8 (2008), 99.
• [5] GALICIA D.M.C., CASTANEDO-PEREZ R., JIMENEZSANDOVAL O., JIMENEZSANDOVAL S., TORRESDELGADO G., ZUNIGA-ROMERO C.I., Thin Solid Films, 371 (2000), 105.
• [6] DONG W., ZHU C., Opt. Mater., 22 (2003), 227.
• [7] VINODKUMAR R., LETHY K.J., ARUNKUMAR P.R., KRISHNAN R.R., PILLAI N.V., PILLAI V.P.M., PHILIP R., Mater. Chem. Phys., 121 (2010), 406.
• [8] GRADO-CAFFARO M.A., GRADO-CAFFARO M., Phys. Lett. A, 372 (2008), 4858.
• [9] PAWAR S.M., GURAV K.V., SHIN S.W., CHOI D.S., KIM I.K., LOKHANDE C.D., RHEE J.I., KIM J.H., J. Nanosci. Nanotechnol., 10 (2010), 1.
• [10] KUMARAVEL R., MENAKA S., SNEGA S.R.M., RAMAMURTHI K., JEGANATHAN K., Mater. Chem. Phys., 122 (2010), 444.
• [11] SUBRAMANYAM T.K., UTHANNA S., NAIDU B.S., Mater. Lett., 35 (1998), 214.
• [12] MAITY R., CHATTOPADHYAY K.K., Sol. Energ. Mat. Sol. C., 90 (2006), 597.
• [13] LIU X., LI C., HAN S., HAN J., ZHOU C., Appl. Phys. Lett., 82 ( 2003), 1950.
• [14] GUTIERREZ L.R., ROMERO J.J.C., TAPIA J.M.P., CALVA E.B., FLORES J.C.M., LOPEZ M.O., Mater. Lett., 60 (2006), 3866.
• [15] BALU A.R., NAGARETHINAM V.S., SUGANYA M., ARUNKUMAR N., SELVAN G., J. Electron. Devices, 12 (2012), 739.
• [16] KHALLAF H., CHEN C.T., CHANG L.B., LUPAN O., DUTTA A., HEINRICH H., SHENOUDA A., CHOW L., Appl. Surf. Sci., 257 (2011), 9237.
• [17] SHINDE V.R., LOKHANDE C.D., MANE R.S., HAN S.H., Appl. Surf. Sci., 245 (2005), 407.
• [18] NENOV T.G., YORDANOV S.P., Ceramic SensorsTechnology and Applications, Technomic Publishing, USA, 1996.
• [19] WINDICHAMANN H., MARK P., J. Electrochem. Sc., 4 (1979), 627.
• [20] MIZSEI J., Sensor. Actuat. B-Chem., 23 (1995), 173.
• [21] QI Q., ZHANG T., ZHENG X., FAN H., LIU L., WANG R., ZENG Y., Sensor. Actuat. B-Chem., 134 (2008), 36.
• [22] GONG J., CHEN Q., LIAN M., LIU N., STEVENSON R.G., ADAMIC F., Sensor. Actuat. B-Chem., 114 (2006), 32.
• [23] EGASHIRA M., KAWASUMI S., KAGAWA S., SEIYAMA T., Bull. Chem. Sc. Jpn., 51 (1978), 3144.
• [24] MONDAL B., BASUMATARI B., DAS J., ROYCHAUDHURY C., SAHA H., MUKHERJEE N., Sensor. Actuat. B-Chem., 194 (2014), 389.

Uwagi

PL

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2019).