Investigation of oxide crystals by means of synchrotron and conventional X-ray diffraction topography

Wierzchowski, W.; Malinowska, A.; Wieteska, K.; Wierzbicka, E.; Mazur, K.; Lefeld-Sosnowska, M.; Świrkowicz, M.; Łukasiewicz, T.

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Tytuł artykułu

Investigation of oxide crystals by means of synchrotron and conventional X-ray diffraction topography

Autorzy

Wierzchowski W. , Malinowska A. , Wieteska K. , Wierzbicka E. , Mazur K. , Lefeld-Sosnowska M. , Świrkowicz M. , Łukasiewicz T.

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wierzchowski_malinowska_investigation_4_2016.pdf

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Warianty tytułu

Badanie monokryształów tlenkowych za pomocą synchrotronowej i konwencjonalnej rentgenowskiej topografii dyfrakcyjnej

Języki publikacji

Abstrakty

X-ray diffraction topography, exploring both conventional and synchrotron sources of X-rays, has been widely used for the investigation of the structural defects in crystals of oxides. The majority of bulk oxide crystals have been grown by the Czochralski method from a melted mixture of high purity oxides. Some important oxide crystals like quartz and ZnO have been obtained by the hydrothermal method. In the case of crystals grown by the first method, synchrotron diffraction topography can be and was used for studying individual dislocations and their complexes (e.g. glide bands, sub-grain boundaries), individual blocks, twinning, the domain structure and various segregation effects negatively affecting crystal properties. What is more, the topographical investigation can provide information concerning the reasons for the generation of the defects, which becomes useful for improving the growth technology. In the present paper the possibilities of the diffraction topography are discussed on the basis of several investigations of the oxide crystals, in particular garnets, orthovanadates, mixed calcium barium and strontium niobates as well as praseodymium lanthanum aluminates. the majority of the results refer to oxide crystals grown at the Institute of Electronic Materials Technology (ITME). The synchrotron investigations included in the paper were performed by the authors at the HASYLAB Synchrotron Laboratory in Hamburg.

Rentgenowska topografia dyfrakcyjna, wykorzystująca zarówno konwencjonalne, jak i synchrotronowe źródła promieniowania rentgenowskiego, jest od wielu lat z powodzeniem stosowana do badania defektów strukturalnych w różnego rodzaju monokryształach. Szeroką grupę tych materiałów stanowią kryształy tlenkowe, które w większości są otrzymywane metodą Czochralskiego ze stopionej mieszaniny tlenków o wysokiej czystości. Do otrzymywania kryształów tlenków, takich jak kwarc i ZnO, stosuje się metodę hydrotermalną. rentgenowska topografia dyfrakcyjna może być wykorzystana do badania indywidualnych dyslokacji i ich kompleksów (np. pasma poślizgowe, granice niskokątowe), pojedynczych bloków, zbliźniaczeń, struktury domenowej i różnych efektów segregacyjnych. Wszystkie te defekty mogą wpływać negatywnie na jednorodność i właściwości kryształów. Badania topograficzne mogą również dostarczyć informacji dotyczących przyczyn powstawania defektów, co przydatne jest w doskonaleniu technologii. W niniejszej pracy omówiono możliwości topografii dyfrakcyjnej na podstawie przeprowadzonych badań szeregu kryształów tlenkowych, w szczególności granatów, ortowanadianów, mieszanych niobianów wapnia, baru i strontu oraz glinianów prazeodymu i lantanu. Większość wyników dotyczy monokryształów tlenków otrzymywanych w Instytucie Technologii Materiałów Elektronicznych (ITME). uwzględnione badania synchrotronowe zostały przeprowadzone przez autorów w Laboratoriom Synchrotronowym HASYLAB w Hamburgu.

Słowa kluczowe

X-ray diffraction topography crystal lattice defects Czochralski method

dyfrakcyjna topografia rentgenowska defekty sieci krystalicznej metoda Czochralskiego

Wydawca

Sieć Badawcza Łukasiewicz - Instytut Technologii Materiałów Elektronicznych

Czasopismo

Materiały Elektroniczne

Rocznik

2016

Tom

T. 44, nr 4

Strony

17--32

Opis fizyczny

Bibliogr. 81 poz., rys.

Twórcy

autor

Wierzchowski W.

wojciech.wierzchowski@itme.edu.pl

Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

autor

Malinowska A.

Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

autor

Wieteska K.

National Centre for Nuclear research, Sołtana 7, 05-400 Otwock-Świerk, Poland

autor

Wierzbicka E.

Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

autor

Mazur K.

Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

autor

Lefeld-Sosnowska M.

Institute of Experimental Physics, university of Warsaw, Pasteura 5, 02-093 Warsaw, Poland

autor

Świrkowicz M.

Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

autor

Łukasiewicz T.

Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

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