Gallium oxide buffer layers for gallium nitride epitaxy

• Autorzy: Korbutowicz R , Wnek J , Panachida P , Serafinczuk J , Srnanek R
• Języki publikacji: EN

Abstrakty

EN

Gallium nitride (GaN) is very attractive semiconductor material because of its unique properties. The serious matter is a lack of easy access to bulk crystals of GaN. Synthesized crystals are precious and rather small. For these reasons almost all device manufacturers and researchers apply alternative substrates for gallium nitride devices epitaxy and it causes that the technology is intricate. Alternative substrates need buffer layers – their technology is usually complex and expensive. We have proposed a simple method to avoid large costs: applying gallium oxide – monoclinic β-Ga2O3, as the buffer layer, which has structural properties quite good matched to GaN. As the substrates made from single crystal gallium oxide are still hardly available on the market, we have used hydride vapour phase epitaxy (HVPE) GaN epilayers as a starting material. It can be GaN layer under good quality – middle or low. The oxidation process converts top GaN to β-Ga2O3 layer which can release or absorb the strain. Applying such structure in another, second, epitaxy of GaN allows to obtain good quality epitaxial structures using HVPE technique.

Słowa kluczowe

EN

hydride vapour phase epitaxy; gallium nitride; gallium oxide; thermal oxidation; buffer layer

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2013
• Tom: Vol. 43, nr 1
• Strony: 73--79
• Opis fizyczny: Bibliogr. 10 poz., rys., tab., wykr.

Twórcy

autor

Korbutowicz R

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-370 Wrocław, Poland

autor

Wnek J

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-370 Wrocław, Poland

autor

Panachida P

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-370 Wrocław, Poland

autor

Serafinczuk J

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-370 Wrocław, Poland

autor

Srnanek R

• Microelectronics Department, Slovak University of Technology, Ilkovicova 3, Bratislava, Slovakia

Bibliografia

• [1] BABAN C., TOYODA Y., OGITA M., Oxygen sensing at high temperatures using Ga2O3 films, Thin Solid Films 484(1–2), 2005, pp. 369–373.
• [2] JING ZHANG, KOSEL T.H., HALL D.C., FAY P., Fabrication and performance of 0.25-μm gate length depletion-mode GaAs-channel MOSFETs with self-aligned InAlP native oxide gate dielectric, IEEE Electron Device Letters 29(2), 2008, pp. 143–145.
• [3] YE P.D., Main determinants for III–V metal-oxide-semiconductor field-effect transistors (invited), Journal of Vacuum Science and Technology A 26(4), 2008, pp. 697–704.
• [4] VÍLLORA E.G., SHIMAMURA K., KITAMURA K., AOKI K., UJIIE T., Epitaxial relationship between wurtzite GaN and β-Ga2O3, Applied Physics Letters 90(23), 2007, article 234102.
• [5] KORBUTOWICZ R., KOZŁOWSKI J., DUMISZEWSKA E., SERAFIŃCZUK J., X-ray characterization of thick GaN layers grown by HVPE, Crystal Research and Technology 40(4–5), 2005, pp. 503–508.
• [6] KORBUTOWICZ R., PRAŻMOWSKA J., WĄGROWSKI Z., SZYSZKA A., TŁACZAŁA M., Wet thermal oxidation for GaAs, GaN and Metal/GaN device applications, [In] The Seventh International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008: Conference Proceedings, Smolenice, Slovakia, October 12–16, 2008, [Eds.] S. Hascik, J. Osvald, IEEE, Piscataway, NJ, 2008, pp. 163–166.
• [7] KORBUTOWICZ R., PRAŻMOWSKA J., Wet thermal oxidation of GaAs and GaN, [In] Semiconductor technologies, [Ed.] J. Grym, In-Teh, Vukovar, 2010, Chap. 6.
• [8] KORBUTOWICZ R., DUMISZEWSKA E., PRAŻMOWSKA J., Thick GaN layers on sapphire with various buffer layers, Crystal Research and Technology 42(12), 2007, pp. 1297–1301.
• [9] HARIMA H., Properties of GaN and related compounds studied by means of Raman scattering, Journal of Physics: Condensed Matter 14(38), 2002, p. R967.
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