Influence of Thermal Phenomena on dc Characteristics of the IGBT

• Autorzy: Górecki P. , Górecki K.

Identyfikatory

DOI

10.24425/118149

• Języki publikacji: EN

Abstrakty

EN

The paper concerns the study of the effect of thermal phenomena on characteristics of the IGBT. The used measurement set-ups and the results of measurements of dc characteristics of the selected transistor obtained under different cooling conditions are presented. The influence of the ambient temperature and the applied cooling system on the shape of these characteristics is discussed. In particular, attention has been paid to the untypical shape of non-isothermal characteristics of this element in the subthreshold range.

Słowa kluczowe

EN

IGBT; thermal phenomena; measurements; DC characteristics; sub-threshold region

• Wydawca: Polish Academy of Sciences, Committee of Electronics and Telecommunication
• Czasopismo: International Journal of Electronics and Telecommunications
• Rocznik: 2018
• Tom: Vol. 64, No. 1
• Strony: 71--76
• Opis fizyczny: Bibliogr. 25 poz., rys., wykr.

Twórcy

autor

Górecki P.

• Department of Marine Electronics, Gdynia Maritime University, Gdynia, Poland

autor

Górecki K.

• Department of Marine Electronics, Gdynia Maritime University, Gdynia, Poland

Bibliografia

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Uwagi

1. The scientific work financed with the Polish science budget resources in the years 2017-2021, as the investigation project within the framework of the program “Diamentowy Grant”.

2. Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2018).