Constitutional Supercooling in Czochralski Growth of Heavily Doped Silicon Crystals

Friedrich, J.; Stockmeier, L.; Müller, G.

Artykuł - szczegóły

Tytuł artykułu

Constitutional Supercooling in Czochralski Growth of Heavily Doped Silicon Crystals

Autorzy

Friedrich J. , Stockmeier L. , Müller G.

Identyfikatory

Warianty tytułu

Języki publikacji

Abstrakty

This study analyses the phenomenon of constitutional supercooling, which is one of the major problems in industrial growth of heavily doped (> 1020 atoms/cm3) silicon crystals by the Czochralski technique. The systematic study is based on theoretical models and experimental data considering the effect of three important dopants (B, P, and As) in dependence of the relevant growth parameters for the Czochralski process. Based on these results, conclusions will be drawn for the stability limits of the Czochralski growth of dislocation-free heavily doped silicon crystals in dependence of the doping species and their concentration.

Słowa kluczowe

silicon crystal Czochralski method

kryształy krzemu metoda Czochralskiego

Wydawca

Oficyna Wydawnicza Politechniki Warszawskiej

Czasopismo

Zeszyty Historyczne Politechniki Warszawskiej

Rocznik

2014

Tom

z. 16

Strony

99--106

Opis fizyczny

Bibliogr. 50 poz., rys., tab., wykr.

Twórcy

autor

Friedrich J.

jochen.friedrich@iisb.fraunhofer.de

Fraunhofer THM, Am St.-Niclas-Schacht 13, 09599 Freiberg, Germany
Fraunhofer Institut IISB, Schottkystr. 10, 91058 Erlangen, Germany

autor

Stockmeier L.

Fraunhofer THM, Am St.-Niclas-Schacht 13, 09599 Freiberg, Germany

autor

Müller G.

Fraunhofer Institut IISB, Schottkystr. 10, 91058 Erlangen, Germany

Bibliografia

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Uwagi

Artykuł przedrukowany z czasopisma "Acta Physica Polonica" A, 2013, Vol.124(2), pp.219-226

Typ dokumentu

Bibliografia

Identyfikator YADDA

bwmeta1.element.baztech-4700c28a-2004-4e6b-a6db-6e3a404b8423