Studies on Inx(As2Se3)1-x thin films using variable angle spectroscopic ellipsometry (VASE)

• Autorzy: Amin G. A. M.

Identyfikatory

DOI

10.1515/msp-2015-0075

• Języki publikacji: EN

Abstrakty

EN

The results of multi-angle ellipsometrical measurements of thermally evaporated In_x(As<sub<2</sub>Se₃)_1-x (x = 0, 0.01, 0.05) films are presented. Optical parameters n and Eg of thin In_x(As<sub<2</sub>Se₃)_1-x films show that indium atoms were incorporated into the host matrix of As<sub<2</sub>Se₃ forming distinct features depending on the indium concentration. Refractive index, n, was found to decrease with the addition of In to the binaryAs<sub<2</sub>Se₃. The real and imaginary parts of the dielectric function, ε' and ε" were also calculated from the obtained data and correlated with In concentration. It was found that ε' decreases with the increaseof In content while ε" increases with the increase of In content. Absorption edge is shifted towards lower photon energy with the increase of In content. As a result, the optical energy gap decreases with increasing In content. This has been correlated with the chemical character of the additive as well as with the structural and bonding aspects of the amorphous composition. Nonlinear optical constants (Χ⁽³⁾ and n₂) were determined from linear optical parameters using semi-empirical relations in the long wavelength limit.

Słowa kluczowe

EN

chalcogenides; ellipsometry; optical absorption; energy gap; nonlinear optics

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2015
• Tom: Vol. 33, No. 3
• Strony: 501--507
• Opis fizyczny: Bibliogr. 29 poz., rys., tab.

Twórcy

autor

Amin G. A. M.

• NCRRT, P.O. Box 8029-Nasr City 11371, Cairo, Egypt

Bibliografia

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