Niebieskie, zielone i białe emitery światła wytwarzane z półprzewodników AIII-BN

• Autorzy: Rudziński M. , Wesołowski M. , Strupiński W.

Identyfikatory

DOI

10.12915/pe.2014.07.01

Warianty tytułu

EN

Blue, green and white light emitters based on III-N semiconductors

• Języki publikacji: PL

Abstrakty

PL

Postępy w ostatnich dwudziestu pięciu latach w epitaksji i technologii wytwarzania materiałów z grupy AIII-BN doprowadziły do wytworzenia komercyjnych, wysoko wydajnych źródeł światła emitujących w kolorach ultrafioletu, niebieskim, zielonym i białym. W pracy przedstawiono przegląd technologii wytwarzania diod elektroluminescencyjnych z materiałów AIII-BN, między innymi różne rozwiązania strukturalne, uwzględniające właściwości materiałowe i wymagania wzrostu krystalicznego MOCVD. Przeanalizowano różne konstrukcje ekstrakcji światła, które są istotne dla uzyskania jak najwyższej wydajności zewnętrznego świecenia. Zaprezentowano najnowsze osiągnięcia dotyczące zewnętrznej wydajności kwantowej dla wysokiej mocy diod elektroluminescencyjnych, jak również wydajności świecenia białych diod opartych na konwersji światła przy użyciu luminoforów.

EN

Recent twenty five years of advances in epitaxial growth and fabrication technologies for the III-Nitrides have led to commercially available, high efficient solid state devices that emits ultraviolet, blue, green and white light. In this work LEDs technologies based on III-Nitrides have been presented. Different structural design choices are described, taking into account specific material properties and MOCVD crystal growth requirement. We review various light extraction schemes which are important for achieving the highest possible light output efficiencies. Recent performance in external quantum efficiency for high power LEDs is reviewed, as well as luminous efficacy of white LEDs based on luminophores down-conversion.

Słowa kluczowe

PL

epitaksja; dioda elektroluminescencyjna; półprzewodniki

EN

epitaxy; semiconductors; LED

• Wydawca: Wydawnictwo SIGMA-NOT
• Czasopismo: Przegląd Elektrotechniczny
• Rocznik: 2014
• Tom: R. 90, nr 7
• Strony: 1--13
• Opis fizyczny: Bibliogr. 103 poz., rys., tab., wykr.

Twórcy

autor

Rudziński M.

• Instytut Technologii Materiałów Elektronicznych, ul. Wólczyńska 133, 01-919 Warszawa

autor

Wesołowski M.

• Instytut Technologii Materiałów Elektronicznych, ul. Wólczyńska 133, 01919 Warszawa

autor

Strupiński W.

• Instytut Technologii Materiałów Elektronicznych, ul. Wólczyńska 133, 01-919 Warszawa

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