Micromagnetic properties of Co/Pt multilayers deposited on different buffer layers

• Autorzy: Czapkiewicz M , Kanak J , Stobiecki T , Kachel M , Żołądź M , Sveklo I , Maziewski A , Van-Dijken S
• Języki publikacji: EN

Abstrakty

EN

A study on the buffer layer dependence of the film texture, surface roughness, and magnetization reversal process in Co/Pt multilayers prepared by dc magnetron sputtering is presented. Oxidized Si(100) wafer was covered with four different buffers: (A) 10 nm Cu, (B) 5 nm Ta/10 nm Cu, (C) 5 nm Ta/10 nm Cu/5 nm Ta, and (D) 5 nm Ta/10 nm Cu/5 nm Ta/10 nm Cu. The growth of [2 nm Pt/0.5 nm Co]×5/2 nm Pt on top of these buffer layers results in a large variation in the fcc (111) Co/Pt texture and surface morphology. All films have the perpendicular magnetic anisotropy but magnetization reversal process, studied by the magnetooptic Kerr effect (MOKE) and magnetic force spectroscopy (MFM), strongly depends on the buffer used. Observation of magnetic domains evolution under a MOKE microscope allows one to calculate from magnetization relaxation curves average dispersion of energy barriers of the thermal activated magnetization switching process. The application of MFM in external magnetic field allows one to follow the dynamics of direct and indirect magnetization switching procesess up to submicrometer scale.

Słowa kluczowe

EN

perpendicular anisotropy; magnetic domain; magnetization reversal

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2008
• Tom: Vol. 26, No. 4
• Strony: 839--848
• Opis fizyczny: Bibliogr. 13 poz., rys., tab., wykr.

Twórcy

autor

Czapkiewicz M

• Department of Electronics, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Kraków, Poland

autor

Kanak J

• Department of Electronics, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Kraków, Poland

autor

Stobiecki T

• Department of Electronics, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Kraków, Poland

autor

Kachel M

• Department of Electronics, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Kraków, Poland

autor

Żołądź M

• Department of Electronics, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Kraków, Poland

autor

Sveklo I

• Institute of Experimental Physics, University of Bialystok, Lipowa 41, 15-424 Bialystok, Poland

autor

Maziewski A

• Institute of Experimental Physics, University of Bialystok, Lipowa 41, 15-424 Bialystok, Poland

autor

Van-Dijken S

• VTT Micro and Nanoelectronics, P.O. Box 1000, FI-02044 VTT, Finland

Bibliografia

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