Identyfikatory
Warianty tytułu
Języki publikacji
Abstrakty
A method of formation of the sulfide-sensitive electrodes in the water-free superbasic solutions using the sulfided semiconducting CdSb monocrystals has been investigated. The effective range of the sulfide ions concentration was found and some other conditions were determined in order to ensure formation of the electrodes with the linear potential/sulfide concentration characteristics. Using the atom absorption spectrometry, the 6:1 molar ratio was found for the Cd and Sb atoms concentrations in the surface electrode film.
Słowa kluczowe
Wydawca
Czasopismo
Rocznik
Tom
Strony
5--7
Opis fizyczny
Bibliogr. 12 poz., tab., wykr.
Twórcy
autor
- urii Fedkovych Chernivtsi National University, Department of Chemical Analysis, Assessment and Food safety. 2, Kotsubynskiy Str., Chernivtsi,Ukraine 58012
Bibliografia
- [1]. J.A. Dagata, W. Tseng., J. Bennett et al., Appl. Phys. Lett., V. 59,No 25, P. 3288–3290 (1991);
- [2]. A. S.Weling, K.K. Kamath, P.R. Vaya, Thin Solid Films, V. 215, No 2, P. 179-183 (1992);
- [3]. B.I. Bednyi et al.,, Phys. i Tech. of Semiconductors, V. 26, No 8, P. 1383–1389 (1992);
- [4]. B.I. Bednyi and N.V. Baidus, Semicond. Phys. and Tech., V. 29, No 8, P. 1488–1493 (1995);
- [5]. A.E. Beliaev, T.V. et al., Semicond. Phys. and Tech., V. 25, No 7, P. 1164–1168 (1991);
- [6]. E.F. Venger et al., Semicond. Phys. and Tech., V. 29, No 2, P. 244–254 (1995);
- [7]. Gmitter et al., Passivation of Gallium Arsenide surface with sodium sulfide, Pat No 4751200, H 01 L 21/302., USA (1988).
- [8]. Carpenter M.S., Melloch M.R., Cowans B.A., J. Vac. Sci. Technol., B., V. 7, No 4, P. 845–850 (1989);
- [9]. V.N. Bessolov et al., Solid State Physics, T. 34, No 6, P. 1713–1718 (1992);
- [10]. V.N. Bessolov et al., Semicond. Phys. and Tech., V. 39, No 1, P. 63–66 (1997);
- [11]. B.A. Nesterenko and O.V. Snitko, Physical properties of atomically clean semiconductor surfaces, Kyiv (1983) p. 264;
- [12]. V.V. Diichuk et al., Problems of Chem. and Chem. Tech., No 3. P. 176–180 (2010).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-4102304b-bfd2-4e2a-bdf9-75f59d40dcf7