Optical investigations of ZnO layers affected by some selected gases in the aspect of their application in optical gas sensors

• Autorzy: Struk P. , Pustelny T. , Gołaszewska K. , Borysiewicz M. A. , Piotrowska A.

Identyfikatory

DOI

10.1515/bpasts-2015-0094

• Języki publikacji: EN

Abstrakty

EN

The paper presents the results of investigations of zinc oxide (ZnO) layers as a potential sensing material, being affected by certain selected gaseous environments. The investigations concerned the optical transmission through thin ZnO layers in wide spectral ranges from ultraviolet to the near infrared. The effect of the gaseous environment on the optical properties of zinc oxide layers with a thickness of ~ 400 nm was analyzed applying various technologies of ZnO manufacturing. Three kinds of ZnO layers were exposed to the effect of the gaseous environment, viz.: layers with relatively slight roughness (RMS several nm), layers with a considerable surface roughness (RMS some score of nm) and layers characterized by porous ZnO structures. The investigations concerned spectral changes in the transmission properties of the ZnO layers due to the effect of such gases as: ammonia (NH3), hydrogen (H2), and nitrogen dioxide (NO2) in the atmosphere of synthetic air. The obtained results indicated the possibility of applying porous ZnO layered structures in optical gas sensors.

Słowa kluczowe

EN

ZnO; semiconductor; gas sensors

PL

Zno; czujniki gazu; półprzewodnik

• Wydawca: Polska Akademia Nauk, Wydział IV Nauk Technicznych
• Czasopismo: Bulletin of the Polish Academy of Sciences. Technical Sciences
• Rocznik: 2015
• Tom: Vol. 63, nr 4
• Strony: 829--836
• Opis fizyczny: Bibliogr. 25 poz., wykr., fot., rys.

Twórcy

autor

Struk P.

• Department of Optoelectronics at Faculty of Electrical Engineering, Silesian University of Technology, 2a Akademicka St., 44-100 Gliwice, Poland

autor

Pustelny T.

• Department of Optoelectronics at Faculty of Electrical Engineering, Silesian University of Technology, 2a Akademicka St., 44-100 Gliwice, Poland

autor

Gołaszewska K.

• Institute of Electron Technology, 32/46 Lotnikow Ave., 02-668 Warsaw, Poland

autor

Borysiewicz M. A.

• Institute of Electron Technology, 32/46 Lotnikow Ave., 02-668 Warsaw, Poland

autor

Piotrowska A.

• Institute of Electron Technology, 32/46 Lotnikow Ave., 02-668 Warsaw, Poland

Bibliografia

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