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Surface roughness and residual stress evolution in SiNx/SiO2 multilayer coatings deposited by reactive pulsed magnetron sputtering

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Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
The surface roughness and residual stress behavior in two types of SiNx/SiO2 dielectric quarter-wave stacks was investigated experimentally. A reactive pulsed magnetron sputtering system was used to prepare the SiNx/SiO2 multilayer thin films. The results show that SiNx/SiO2 quarter-wave stack with a buffer layer of MgF2 thin film can reduce the residual stress. The effect of aging on the residual stress in two quarter-wave stacks was also studied. We found that the residual stresses in both SiNx/SiO2 multilayer coatings are changed from a compressive state to a tensile stress state with increasing the aging time. The root mean square (RMS) surface roughness of MgF2/(SiNx/SiO2)22 and (SiNx/SiO2)22 quarter-wave stacks are 2.23 ± 0.22 nm and 2.08 ± 0.20 nm, respectively.
Czasopismo
Rocznik
Strony
223--233
Opis fizyczny
Bibliogr. 18 poz., rys.
Twórcy
  • Department of Electrical Engineering, Feng Chia University, Taichung, Taiwan
  • Ph.D. Program of Electrical and Communications Engineering, Feng Chia University, Taichung, Taiwan
autor
  • Department of Electrical Engineering, Feng Chia University, Taichung, Taiwan
  • Mechanical and Systems Research Lab, Industrial Technology Research Institute, Hsinchu, Taiwan
autor
  • Ph.D. Program of Electrical and Communications Engineering, Feng Chia University, Taichung, Taiwan
Bibliografia
  • [1] DUBEY R.S., JHANSIRANI K., SINGH S., Investigation of solar cell performance using multilayer thin film structure (SiO2/Si3N4) and grating, Results in Physics 7, 2017, pp. 77–81, DOI:10.1016/j.rinp.2016.11.065.
  • [2] TIEN C.L., LIN T.W., Thermal expansion coefficient and thermomechanical properties of SiNx thin films prepared by plasma-enhanced chemical vapor deposition, Applied Optics 51(30), 2012, pp. 7229–7235, DOI:10.1364/AO.51.007229.
  • [3] JHANSIRANI K., DUBEY R.S., MORE M.A., SINGH S., Deposition of silicon nitride films using chemical vapor deposition for photovoltaic applications, Results in Physics 6, 2016, pp. 1059–1063, DOI:10.1016/j.rinp.2016.11.029.
  • [4] MENG X., BYUNY.C., KIM H.S., LEE J.S., LUCERO A.T., CHENG L., KIM J., Atomic layer deposition of silicon nitride thin films: a review of recent progress, challenges, and outlooks, Materials 9(12), 2016, article 1007, DOI:10.3390/ma9121007.
  • [5] ONG P.L., WEI J., TAY F.E.H., ILIESCU C., A new fabrication method for low stress PECVD – SiNx layers, Journal of Physics: Conference Series 34, 2006, pp. 764–769, DOI:10.1088/1742-6596/34/1/126.
  • [6] SRIDHAR N., RICKMAN J.M., SROLOVITZ D.J., Multilayer film stability, Journal of Applied Physics 82(10), 1997, pp. 4852–4859, DOI:10.1063/1.366347.
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  • [11] TIEN C.L., ZENG H.D., Measuring residual stress of anisotropic thin film by fast Fourier transform, Optics Express 18(16), 2010, pp. 16594–16600, DOI:10.1364/OE.18.016594.
  • [12] STONEY G.G., The tension of metallic films deposited by electrolysis, Proceedings of the Royal Society A 82(553), 1909, pp. 172–175, DOI:10.1098/rspa.1909.0021.
  • [13] BRENNER A., SENDEROFF S., Calculation of stress in electrodeposits from the curvature of a plated strip, Journal of Research of the National Bureau of Standards (USA)42, 1949, pp. 105–123.
  • [14] HSUEH C.H., Modeling of elastic deformation of multilayers due to residual stresses and external bending, Journal of Applied Physics 91(12), 2002, pp. 9652–9656, DOI:10.1063/1.1478137.
  • [15] ZHANG X.C., XU B.S., WANG H.D., WU Y.X., Optimum designs for multi-layered film structures based on the knowledge on residual stresses, Applied Surface Science 253(12), 2007, pp. 5529–5535, DOI:10.1016/j.apsusc.2006.12.076.
  • [16] YAHIA K.Z., Simulation of multilayer antireflection coating for visible and near IR region on silicon substrate using MATLAB program, Journal of Al-Nahrin University 12(4), 2009, pp. 97–103.
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Uwagi
Opracowanie rekordu ze środków MNiSW, umowa Nr 461252 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2021).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-3e8aff79-4af8-40d2-af61-b7335f338af7
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