Interfaces-engineered M-structure for infrared detectors

• Autorzy: Marchewka Michał , Jarosz Dawid , Ruszała Marta , Juś Anna , Krzemiński Piotr , Bobko Ewa , Trzyna-Sowa Małgorzata , Wojnarowska-Nowak Renata , Śliż Paweł , Rygała Michał , Motyka Marcin

Identyfikatory

DOI

10.24425/opelre.2024.150183

• Języki publikacji: EN

Abstrakty

EN

In this paper, the authors report strain-balanced M-structures InAs/GaSb/AlSb/GaSb superlattice growth on GaSb substrates using two kinds of interfaces (IFs): GaAs-like IFs and InSb-like IFs. The in-plane compressive strain of 60-period and 100-period InAsm/GaSb/AlSbn/GaSb with different InAs (m) and AlSb (n) monolayers are investigated. The M-structures InAs/GaSb/AlSb/GaSb represent type II superlattices (T2SL) and at present are under intensive investigation. Many authors showtheoretical and experimental results that such structures can be used as a barrier material for a T2SL InAs/GaSb absorber tuned for long-wave infrared detectors (8 μm–14 μm). Beside that, M-structure can also be used as an active material for short-wave infrared detectors to replace InAs/GaSb which, for this region of infrared, are a big challenge from the point of view of balancing compression stress. The study of InAs/GaSb/AlSb/GaSb superlattice with the minimal strain for GaSb substrate can be obtained by a special procedure of molecular beam epitaxy growth through special shutters sequence to form both IFs. The authors were able to achieve smaller minimal mismatches of the lattice constants compared to literature. The high-resolution X-ray diffraction measurements prove that two types of IFs are proper for balancing the strain in such structures. Additionally, the results of Raman spectroscopy, surface analyses of atomic force microscopy, and differential interference contrast microscopy are also presented. The numerical calculations presented in this paper prove that the presence of IFs significantly changes the energy gap in the case of the investigated M-structures. The theoretical results obtained for one of the investigated structures, for a specially designed structure reveal an extra energy level inside the energy gap. Moreover, photoluminescence results obtained for this structure prove the good quality of the synthesized M-structures, as well as are in a good agreement with theoretical calculations.

Słowa kluczowe

EN

molecular beam epitaxy; T2SL; InAs/GaSb/AlSb/GaSb; M-structures; dyspersion relation; numerical calculations

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2024
• Tom: Vol. 32, No. 2
• Strony: art. no. e150183
• Opis fizyczny: Bibliogr. 30 poz., rys., tab., wykr.

Twórcy

autor

Marchewka Michał

• Center for Microelectronics and Nanotechnology, Institute of Materials Engineering, University of Rzeszów, al. Rejtana 16, 35-959 Rzeszów, Poland

• https://orcid.org/0000-0002-5861-5476

autor

Jarosz Dawid

• Center for Microelectronics and Nanotechnology, Institute of Materials Engineering, University of Rzeszów, al. Rejtana 16, 35-959 Rzeszów, Poland
• International Research Centre MagTop, Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

• https://orcid.org/0000-0001-8162-8016

autor

Ruszała Marta

• Center for Microelectronics and Nanotechnology, Institute of Materials Engineering, University of Rzeszów, al. Rejtana 16, 35-959 Rzeszów, Poland

• https://orcid.org/0000-0001-8963-3936

autor

Juś Anna

• Center for Microelectronics and Nanotechnology, Institute of Materials Engineering, University of Rzeszów, al. Rejtana 16, 35-959 Rzeszów, Poland

• https://orcid.org/0000-0001-6584-8182

autor

Krzemiński Piotr

• Center for Microelectronics and Nanotechnology, Institute of Materials Engineering, University of Rzeszów, al. Rejtana 16, 35-959 Rzeszów, Poland

• https://orcid.org/0000-0002-8931-2494

autor

Bobko Ewa

• Center for Microelectronics and Nanotechnology, Institute of Materials Engineering, University of Rzeszów, al. Rejtana 16, 35-959 Rzeszów, Poland

• https://orcid.org/0000-0002-4235-8698

autor

Trzyna-Sowa Małgorzata

• Center for Microelectronics and Nanotechnology, Institute of Materials Engineering, University of Rzeszów, al. Rejtana 16, 35-959 Rzeszów, Poland

• https://orcid.org/0000-0002-6546-9382

autor

Wojnarowska-Nowak Renata

• Center for Microelectronics and Nanotechnology, Institute of Materials Engineering, University of Rzeszów, al. Rejtana 16, 35-959 Rzeszów, Poland

• https://orcid.org/0000-0003-2550-227X

autor

Śliż Paweł

• Center for Microelectronics and Nanotechnology, Institute of Materials Engineering, University of Rzeszów, al. Rejtana 16, 35-959 Rzeszów, Poland

• https://orcid.org/0000-0002-4884-6537

autor

Rygała Michał

• Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, ul. Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

• https://orcid.org/0000-0001-7210-2063

autor

Motyka Marcin

• Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, ul. Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

• https://orcid.org/0000-0002-0886-2356

Bibliografia

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Uwagi

Opracowanie rekordu ze środków MNiSW, umowa nr SONP/SP/546092/2022 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2024).